ISC0603NLSATMA1 Equivalent & Substitute Parts

Part Overview

The ISC0603NLSATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, part of the OptiMOS™ 5 series. This device is rated for 80V drain-to-source voltage with continuous drain current of 12.3A at Ta and 56A at Tc. The component is housed in a 8-PowerTDFN surface mount package (PG-TDSON-8-6).

The ISC0603NLSATMA1 is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing production requirements, maintenance operations, and design continuity where this part number is specified.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	80	V
Continuous Drain Current @ 25°C (Ta)	12.3	A
Continuous Drain Current @ 25°C (Tc)	56	A
Rds On (Max) @ 20A, 10V	8.9	mOhm
Gate Charge (Qg) @ 10V	24	nC
Input Capacitance (Ciss) @ 40V	1600	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	52	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PowerTDFN (PG-TDSON-8-6)	Surface Mount
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the ISC0603NLSATMA1 is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 80V
Continuous Drain Current: Must meet or exceed 12.3A (Ta) and 56A (Tc)
On-State Resistance (Rds On): Must not exceed 8.9mOhm at specified conditions
Gate Charge (Qg): Must not exceed 24nC at 10V
Input Capacitance (Ciss): Must not exceed 1600pF at 40V
Operating Temperature Range: Must support -55°C to 150°C
FET Type: N-Channel MOSFET technology

Mechanical Compatibility Criteria:

Package Type: 8-PowerTDFN (PG-TDSON-8-6) surface mount
Mounting Type: Surface mount

Compliance Criteria:

RoHS3 Compliance required
Moisture Sensitivity Level: MSL 1 (Unlimited)

The ISC0602NLSATMA1 meets all substitution criteria and is classified as an equivalent part for the ISC0603NLSATMA1.

Parameter Comparison

Parameter	ISC0603NLSATMA1 (Main)	ISC0602NLSATMA1 (Substitute)	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	—
Series	OptiMOS™ 5	OptiMOS™ 5	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	80	80	V
Continuous Drain Current @ Ta	12.3	14	A
Continuous Drain Current @ Tc	56	66	A
Rds On (Max) @ 20A, 10V	8.9	7.3	mOhm
Vgs(th) (Max) @ Id	2.3	2.3	V
Gate Charge (Qg) @ 10V	24	22	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) @ 40V	1600	1800	pF
Power Dissipation (Ta)	2.5	2.5	W
Power Dissipation (Tc)	52	60	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	8-PowerTDFN (PG-TDSON-8-6)	8-PowerTDFN (PG-TDSON-8-6)	—
Mounting Type	Surface Mount	Surface Mount	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—
ECCN	EAR99	EAR99	—
HTSUS	8541.29.0095	8541.29.0095	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The ISC0602NLSATMA1 is a direct substitute for the ISC0603NLSATMA1 based on the following engineering criteria:

Electrical Performance: The ISC0602NLSATMA1 exceeds the electrical specifications of the main part across all critical parameters. Continuous drain current is higher (14A at Ta, 66A at Tc versus 12.3A and 56A), on-state resistance is lower (7.3mOhm versus 8.9mOhm), and gate charge is lower (22nC versus 24nC). These improvements ensure superior performance in equivalent circuit applications.

Package and Mechanical Compatibility: Both parts utilize identical 8-PowerTDFN (PG-TDSON-8-6) surface mount packaging, enabling direct PCB layout compatibility without redesign.

Compliance and Regulatory Status: Both components are ROHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity rating, are REACH unaffected, and share identical ECCN and HTSUS classifications. Regulatory requirements are fully satisfied.

Product Status Advantage: The ISC0602NLSATMA1 is classified as active product status, ensuring long-term availability and supply chain continuity compared to the obsolete ISC0603NLSATMA1.

Thermal Performance: The ISC0602NLSATMA1 provides enhanced thermal dissipation capability (60W at Tc versus 52W), supporting higher power applications within the same package footprint.

Frequently Asked Questions (FAQ)

Q: Can the ISC0602NLSATMA1 be used as a direct replacement for the ISC0603NLSATMA1 without circuit modification?

A: Yes. Both parts share identical voltage ratings (80V Vdss), identical package type (8-PowerTDFN), and identical pinout. The ISC0602NLSATMA1 meets or exceeds all electrical specifications of the ISC0603NLSATMA1. No circuit modification is required.

Q: What are the key electrical differences between these two parts?

A: The ISC0602NLSATMA1 provides improved electrical characteristics: higher continuous drain current (14A at Ta, 66A at Tc), lower on-state resistance (7.3mOhm), lower gate charge (22nC), and higher thermal dissipation (60W at Tc). These represent performance enhancements rather than limitations.

Q: Are the packages physically identical?

A: Yes. Both the ISC0603NLSATMA1 and ISC0602NLSATMA1 use the 8-PowerTDFN package (PG-TDSON-8-6) with identical surface mount footprints. PCB layouts are fully compatible.

Q: Does the ISC0602NLSATMA1 meet the same compliance requirements?

A: Yes. Both parts are ROHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity rating, are REACH unaffected, and share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: Why is the ISC0603NLSATMA1 listed as obsolete?

A: The ISC0603NLSATMA1 is classified as obsolete product status. The ISC0602NLSATMA1 is the active equivalent part from Infineon Technologies and is recommended for new designs and ongoing production support.

Q: What is the operating temperature range for both parts?

A: Both the ISC0603NLSATMA1 and ISC0602NLSATMA1 operate across the identical temperature range of -55°C to 150°C (TJ).

Q: Are there any gate drive voltage differences between these parts?

A: No. Both parts share identical gate drive voltage specifications: maximum Rds On at 4.5V and 10V, with maximum gate-source voltage (Vgs) of ±20V.

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