IS41LV16100C-50TLI-TR Equivalent & Substitute Parts

Part Overview

The IS41LV16100C-50TLI-TR is a 16Mbit EDO DRAM memory IC manufactured by ISSI in a 44-TSOP II surface mount package. This component is classified as obsolete, making substitute parts necessary for new designs and production continuity. The part operates at 3V to 3.6V supply voltage with a 25 ns access time and supports parallel memory interface architecture.

Substiute Parts

IS41LV16100C-50TLI-TR

ISSI, Integrated Silicon Solution IncIn Stock: 932IS41LV16100C-50TLI-TR Datasheet

Current PartRFQ

AS7C316096B-10TINTR

Alliance Memory, Inc.In Stock: 1014AS7C316096B-10TINTR Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution for the IS41LV16100C-50TLI-TR is determined by the following critical parameters:

• Package Compatibility: 44-TSOP II surface mount package with 0.400" (10.16mm) width
• Memory Size: 16Mbit total capacity
• Parallel Interface: Parallel memory interface architecture
• Voltage Range: Supply voltage compatibility within 2.7V to 3.6V envelope
• Operating Temperature: -40°C to 85°C range
• RoHS Compliance: ROHS3 Compliant status
• MSL Rating: 3 (168 Hours) moisture sensitivity level

The AS7C316096B-10TINTR qualifies as a substitute based on matching package type, memory size, parallel interface, voltage compatibility, temperature range, and compliance certifications. The substitute differs in memory technology (SRAM vs. DRAM) and memory organization (2M x 8 vs. 1M x 16), which are acceptable variations for parallel memory interface applications requiring 16Mbit capacity in identical packaging.

Parameter Comparison

Engineering Selection Recommendations

The AS7C316096B-10TINTR is qualified as a substitute based on the following engineering criteria:

• Package Compatibility: Both parts use 44-TSOP surface mount packages with identical 0.400" (10.16mm) width, enabling direct PCB footprint compatibility.
• Memory Capacity: Both parts provide 16Mbit total memory capacity, maintaining system memory requirements.
• Parallel Interface: Both parts implement parallel memory interface architecture, supporting identical bus protocols and signal timing.
• Voltage Compatibility: The substitute's 2.7V to 3.6V supply range encompasses the main part's 3V to 3.6V requirement.
• Temperature Range: Identical -40°C to 85°C operating temperature range ensures thermal compatibility.
• Compliance Status: Both parts are ROHS3 Compliant with identical MSL 3 (168 Hours) ratings, meeting regulatory and manufacturing requirements.
• Product Availability: The substitute is Active status, ensuring procurement availability and long-term supply continuity compared to the Obsolete main part.

Frequently Asked Questions (FAQ)

Q: Can the AS7C316096B-10TINTR directly replace the IS41LV16100C-50TLI-TR on existing PCBs?

A: Yes. Both parts use identical 44-TSOP surface mount packages with matching 0.400" (10.16mm) width and pin pitch, enabling direct PCB footprint compatibility without layout modifications.

Q: What is the difference between DRAM-EDO and SRAM-Asynchronous technologies?

A: DRAM-EDO (Extended Data Out) requires periodic refresh cycles and uses dynamic storage, while SRAM-Asynchronous uses static storage without refresh requirements. Both are volatile memory types that lose data when power is removed. The substitute's SRAM technology provides faster access time (10 ns vs. 25 ns) and does not require refresh logic.

Q: Are the memory organizations (1M x 16 vs. 2M x 8) compatible?

A: Both organizations provide 16Mbit total capacity. The difference in row/column addressing (1M rows × 16-bit words vs. 2M rows × 8-bit words) requires verification that the system's memory controller supports the substitute's addressing scheme and data width configuration.

Q: Do both parts meet the same compliance requirements?

A: Yes. Both parts are ROHS3 Compliant with identical MSL 3 (168 Hours) moisture sensitivity ratings, meeting identical regulatory and manufacturing process requirements.

Q: Why is the substitute faster (10 ns vs. 25 ns access time)?

A: The substitute uses SRAM technology, which inherently provides faster access times than EDO DRAM technology. The faster access time is a performance advantage and does not create compatibility issues in systems designed for the slower main part.

Q: Is the substitute's wider voltage range (2.7V - 3.6V) significant?

A: The substitute's lower minimum voltage (2.7V vs. 3V) provides additional operational margin in systems with voltage regulation tolerances. This is a compatibility advantage with no negative impact.