IS41LV16100C-50TLI Equivalent & Substitute Parts

Part Overview

The IS41LV16100C-50TLI is a 16Mbit EDO DRAM memory IC manufactured by ISSI in a 44-TSOP II package. This component is classified as obsolete, making equivalent and substitute parts necessary for legacy system maintenance, repair, and redesign applications. The part operates at 3V to 3.6V supply voltage with a 25 ns access time and supports parallel memory interface architecture.

Key Parameters

Parameter	Value
Memory Type	Volatile DRAM
Memory Technology	EDO DRAM
Memory Size	16Mbit
Memory Organization	1M x 16
Memory Interface	Parallel
Access Time	25 ns
Voltage Supply Range	3V ~ 3.6V
Operating Temperature	-40°C ~ 85°C
Package Type	44-TSOP II
Mounting Type	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution for the IS41LV16100C-50TLI is determined by the following critical parameters: memory size (16Mbit), memory interface type (parallel), voltage supply compatibility (3V ~ 3.6V), operating temperature range (-40°C ~ 85°C), and physical package compatibility (44-TSOP footprint).

Two substitute categories exist:

Direct Equivalent (Same Technology): IS41LV16100D-50TLI maintains identical EDO DRAM technology, 16Mbit capacity, 1M x 16 organization, and parallel interface. This part differs only in package variant (50-TSOP II vs. 44-TSOP II) and product status (active vs. obsolete).

Functional Alternative (Different Technology): AS7C316096B-10TINTR provides 16Mbit capacity and parallel interface but uses SRAM technology instead of DRAM. This part offers superior access time (10 ns vs. 25 ns) and maintains compatible voltage supply range and operating temperature. However, memory organization differs (2M x 8 vs. 1M x 16) and technology classification changes from EDO DRAM to asynchronous SRAM.

Parameter Comparison

Parameter	IS41LV16100C-50TLI (Main)	IS41LV16100D-50TLI (Direct Equivalent)	AS7C316096B-10TINTR (Functional Alternative)
Manufacturer	ISSI	ISSI	Alliance Memory, Inc.
Memory Type	Volatile DRAM	Volatile DRAM	Volatile SRAM
Memory Technology	EDO DRAM	EDO DRAM	SRAM - Asynchronous
Memory Size	16Mbit	16Mbit	16Mbit
Memory Organization	1M x 16	1M x 16	2M x 8
Memory Interface	Parallel	Parallel	Parallel
Access Time	25 ns	25 ns	10 ns
Voltage Supply	3V ~ 3.6V	3V ~ 3.6V	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C	-40°C ~ 85°C	-40°C ~ 85°C
Package / Case	44-TSOP (0.400", 10.16mm Width)	50-TSOP (0.400", 10.16mm Width)	44-TSOP (0.400", 10.16mm Width)
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	3 (168 Hours)	3 (168 Hours)	3 (168 Hours)

Engineering Selection Recommendations

IS41LV16100D-50TLI is the preferred direct equivalent for applications requiring EDO DRAM technology with identical electrical characteristics. This part maintains active product status and full ROHS3 compliance. The primary consideration is package footprint: the 50-TSOP II variant requires PCB layout verification to confirm compatibility with existing 44-TSOP II land patterns. Pin count and lead spacing differ between these package types.

AS7C316096B-10TINTR serves as a functional alternative when system architecture permits SRAM substitution for DRAM. This part offers performance advantages through faster access time (10 ns) and maintains compatible voltage supply range and operating temperature specifications. Memory organization change (2M x 8 vs. 1M x 16) requires address and data bus reconfiguration at the system level. SRAM technology eliminates refresh cycle requirements, reducing power consumption and system complexity. This part is active and ROHS3 compliant.

Selection between direct equivalent and functional alternative depends on system-level requirements: EDO DRAM technology necessity, memory organization constraints, access time performance targets, and PCB layout flexibility.

Frequently Asked Questions (FAQ)

Q: Can IS41LV16100D-50TLI directly replace IS41LV16100C-50TLI on existing PCBs?

A: Direct PCB replacement is not possible without layout modification. The 50-TSOP II package has 50 leads compared to 44 leads in the 44-TSOP II package. Pin assignments, lead spacing, and footprint dimensions differ. PCB redesign is required.

Q: What are the key differences between EDO DRAM and SRAM technologies?

A: EDO DRAM (Extended Data Out) requires periodic refresh cycles to maintain data integrity and uses dynamic storage cells. SRAM (Static RAM) uses static storage cells and does not require refresh, offering faster access times and lower power consumption during idle states. Both are volatile memory types.

Q: Is AS7C316096B-10TINTR compatible with systems designed for 1M x 16 memory organization?

A: AS7C316096B-10TINTR uses 2M x 8 organization, requiring system-level address and data bus reconfiguration. Direct pin-for-pin compatibility does not exist. System firmware and memory controller programming must be modified to accommodate the different organization scheme.

Q: Are all three parts RoHS compliant?

A: Yes. IS41LV16100C-50TLI, IS41LV16100D-50TLI, and AS7C316096B-10TINTR are all ROHS3 compliant with MSL rating 3 (168 hours).

Q: Why is IS41LV16100C-50TLI classified as obsolete?

A: Obsolete classification indicates the manufacturer has discontinued production. IS41LV16100D-50TLI maintains active status as the current production equivalent from ISSI.

Q: What voltage supply range compatibility exists across all three parts?

A: IS41LV16100C-50TLI and IS41LV16100D-50TLI operate at 3V ~ 3.6V. AS7C316096B-10TINTR operates at 2.7V ~ 3.6V, providing broader low-voltage compatibility while maintaining the 3.6V upper limit.

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