IRS21171STRPBF Equivalent & Substitute Parts

Part Overview

The IRS21171STRPBF is a high-side gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET applications in power management circuits. This component operates with a supply voltage range of 10V to 20V and features non-inverting logic configuration in an 8-SOIC surface mount package.

The IRS21171STRPBF is classified as obsolete. Identifying suitable substitute components is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications utilizing this gate driver topology.

Substiute Parts

IRS21171STRPBF
Infineon TechnologiesIn Stock: 1793IRS21171STRPBF Datasheet
IRS21171STRPBF
Current Part
IRS25752LTRPBF
Infineon TechnologiesIn Stock: 11430IRS25752LTRPBF Datasheet
IRS25752LTRPBF
MFR Recommended

Key Parameters

Parameter IRS21171STRPBF
Manufacturer Infineon Technologies
Product Status Obsolete
Driven Configuration High-Side
Channel Type Single
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V
Current - Peak Output (Source, Sink) 290mA, 600mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise / Fall Time (Typ) 75ns, 35ns
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Moisture Sensitivity Level (MSL) 2 (1 Year)

Substitute Part Grouping Explanation

Substitution of the IRS21171STRPBF is determined by the following critical parameters:

Functional Compatibility Requirements:

  • Driven configuration must be high-side
  • Channel type must be single
  • Input type must be non-inverting
  • Gate type must support N-Channel MOSFET operation

Electrical Compatibility Requirements:

  • Supply voltage range must encompass or be compatible with 10V ~ 20V operation
  • Bootstrap voltage rating must meet or exceed 600V
  • Peak output current (source and sink) must meet or exceed application demands

Physical and Environmental Requirements:

  • Surface mount technology
  • Operating temperature range must support -40°C ~ 150°C minimum
  • Regulatory compliance (REACH, ECCN, HTSUS codes)

The IRS25752LTRPBF qualifies as a substitute based on these criteria, though with specific parameter variations that require engineering evaluation.

Parameter Comparison

Parameter IRS21171STRPBF IRS25752LTRPBF Compatibility Notes
Manufacturer Infineon Technologies Infineon Technologies Same manufacturer
Product Status Obsolete Active Substitute is actively produced
Driven Configuration High-Side High-Side Functionally equivalent
Channel Type Single Single Functionally equivalent
Gate Type IGBT, N-Channel MOSFET N-Channel MOSFET Substitute supports N-Channel MOSFET; IGBT support not specified
Voltage - Supply 10V ~ 20V 10V ~ 18V Substitute range is narrower; maximum reduced by 2V
Logic Voltage - VIL, VIH 0.8V, 2.5V Not specified Substitute specifications not provided
Current - Peak Output (Source, Sink) 290mA, 600mA 160mA, 240mA Substitute has reduced output current capability
Input Type Non-Inverting Non-Inverting Functionally equivalent
High Side Voltage - Max (Bootstrap) 600V 600V Functionally equivalent
Rise / Fall Time (Typ) 75ns, 35ns 85ns, 40ns Substitute has slightly slower switching characteristics
Operating Temperature -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) Substitute has extended lower temperature range
Package / Case 8-SOIC (0.154", 3.90mm Width) SOT-23-6 Different package; PCB layout modification required
Moisture Sensitivity Level (MSL) 2 (1 Year) 1 (Unlimited) Substitute has superior moisture tolerance
RoHS Status Not specified ROHS3 Compliant Substitute meets current RoHS requirements

Engineering Selection Recommendations

IRS25752LTRPBF Substitution Considerations:

The IRS25752LTRPBF is an active product from Infineon Technologies and represents a viable substitute for the obsolete IRS21171STRPBF in applications where the following conditions are met:

Acceptable Substitution Scenarios:

  • Applications operating within the 10V ~ 18V supply voltage range
  • Gate drive current requirements do not exceed 160mA source or 240mA sink
  • Switching speed requirements tolerate 85ns rise time and 40ns fall time
  • PCB layout can accommodate SOT-23-6 package footprint
  • N-Channel MOSFET gate driving is the primary application (IGBT support not specified for substitute)

Substitution Limitations:

  • The IRS25752LTRPBF supply voltage maximum is 18V, compared to 20V for the original part. Applications requiring operation above 18V are not suitable for this substitute.
  • Peak output current is reduced (160mA source, 240mA sink versus 290mA source, 600mA sink). High-current gate drive applications may require alternative solutions.
  • Package change from 8-SOIC to SOT-23-6 requires PCB redesign and validation.
  • IGBT gate driving capability is not specified for the substitute; confirmation with Infineon is required if IGBT applications are critical.

Compliance Status: The IRS25752LTRPBF carries ROHS3 compliance and REACH unaffected status, meeting current regulatory requirements. Both parts share identical ECCN (EAR99) and HTSUS (8542.39.0001) classifications.

Frequently Asked Questions (FAQ)

Q: Can the IRS25752LTRPBF directly replace the IRS21171STRPBF without circuit modifications?

A: No. While both are high-side gate drivers with non-inverting logic, the IRS25752LTRPBF operates at a maximum supply voltage of 18V compared to 20V for the original part. Additionally, the package changes from 8-SOIC to SOT-23-6, requiring PCB layout modifications. Peak output current is also reduced, which may impact applications with high gate charge requirements.

Q: What is the primary reason for substitution?

A: The IRS21171STRPBF is classified as obsolete. The IRS25752LTRPBF is an active product from the same manufacturer, ensuring ongoing availability and supply chain continuity.

Q: Are there any temperature range differences?

A: Yes. The IRS25752LTRPBF extends the lower operating temperature limit to -55°C compared to -40°C for the original part, providing improved performance in cold environment applications.

Q: How do the switching characteristics compare?

A: The IRS25752LTRPBF has slightly slower switching characteristics (85ns rise time, 40ns fall time) compared to the original (75ns rise time, 35ns fall time). This 10ns difference in rise time and 5ns difference in fall time may affect high-frequency switching applications.

Q: Is the IRS25752LTRPBF suitable for IGBT applications?

A: The IRS25752LTRPBF datasheet specifies N-Channel MOSFET gate driving. IGBT support is not documented for this substitute. If IGBT gate driving is required, alternative components should be evaluated or confirmation obtained directly from Infineon Technologies.

Q: What are the package footprint implications?

A: The original IRS21171STRPBF uses an 8-SOIC package (0.154", 3.90mm width). The substitute IRS25752LTRPBF uses SOT-23-6 package. These are physically different packages requiring PCB redesign, component placement changes, and trace routing modifications.

Q: Does the reduced output current affect all applications?

A: The IRS25752LTRPBF provides 160mA source and 240mA sink current versus 290mA source and 600mA sink for the original. Applications with moderate gate charge requirements (typical MOSFETs and IGBTs) are generally compatible. High-current gate drive applications or parallel MOSFET configurations may require evaluation of alternative solutions.

Q: Are there moisture sensitivity differences?

A: Yes. The IRS21171STRPBF has MSL 2 (1 Year), while the IRS25752LTRPBF has MSL 1 (Unlimited). The substitute offers superior moisture tolerance, reducing handling and storage constraints.

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