IRS2113STRPBF Equivalent & Substitute Parts

Part Overview

The IRS2113STRPBF is an active half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This device operates with a supply voltage range of 10V to 20V and delivers peak output currents of 2.5A for both source and sink operations. The part is currently in active production status with robust inventory availability (24,134 pcs in stock). Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory constraints, or specific packaging preferences while maintaining electrical and mechanical compatibility.

Substiute Parts

IRS2113STRPBF

Infineon TechnologiesIn Stock: 24168IRS2113STRPBF Datasheet

Current PartRFQ

DGD2113S16-13

Diodes IncorporatedIn Stock: 21388DGD2113S16-13 Datasheet

DirectRFQ

LF2113BTR

IXYS Integrated Circuits DivisionIn Stock: 1126LF2113BTR Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRS2113STRPBF are qualified based on strict electrical and mechanical parameter alignment. The substitution criteria are:

• Driven configuration must be half-bridge with independent channel type
• Number of drivers must be 2
• Gate type must support IGBT and N-Channel MOSFET
• Supply voltage range must be 10V ~ 20V
• Peak output current (source and sink) must be 2.5A
• High side bootstrap voltage maximum must be 600V
• Input type must be non-inverting
• Package must be 16-SOIC with 0.295" (7.50mm) width
• Mounting type must be surface mount
• RoHS3 compliance and MSL 3 rating required

The identified substitutes (DGD2113S16-13 and LF2113BTR) meet all mandatory electrical parameters and mechanical specifications. Variations in rise/fall time performance and operating temperature ranges are secondary parameters that do not preclude substitution eligibility.

Parameter Comparison

Engineering Selection Recommendations

All three parts maintain active product status and full ROHS3 compliance with identical MSL 3 ratings, ensuring regulatory and environmental compatibility across applications.

The DGD2113S16-13 (Diodes Incorporated) provides electrical equivalence with improved rise and fall time performance (15ns/13ns versus 25ns/17ns). This part is supplied in Tape & Reel packaging and maintains identical logic voltage thresholds (6V/9.5V) and operating temperature range (-40°C to 150°C junction temperature).

The LF2113BTR (IXYS Integrated Circuits Division) offers equivalent electrical performance with matching rise and fall times (15ns/13ns). This part features a lower logic input low threshold (5V versus 6V) and operates to a maximum junction temperature of 125°C (TA) rather than 150°C (TJ). Inventory availability is lower at 1,082 pcs compared to alternatives.

Selection between substitutes depends on specific application requirements regarding switching speed, thermal operating range, and packaging format preferences.

Frequently Asked Questions (FAQ)

Q: Can DGD2113S16-13 be used as a direct replacement for IRS2113STRPBF?

A: Yes. Both parts share identical half-bridge gate driver architecture, supply voltage range (10V-20V), peak output current (2.5A source/sink), bootstrap voltage rating (600V), and 16-SOIC package dimensions. The DGD2113S16-13 exhibits faster switching characteristics (15ns/13ns rise/fall time) and maintains the same operating temperature range.

Q: What is the difference between the packaging formats listed?

A: IRS2113STRPBF is supplied in Cut Tape (CT) and Digi-Reel format. DGD2113S16-13 is supplied in Tape & Reel (TR) format. Both formats are standard surface mount packaging; selection depends on assembly line equipment compatibility and volume requirements.

Q: Are there operating temperature differences between substitutes?

A: IRS2113STRPBF and DGD2113S16-13 both operate from -40°C to 150°C (junction temperature). LF2113BTR operates from -40°C to 125°C (ambient temperature). Applications requiring operation above 125°C ambient or sustained high junction temperatures should use IRS2113STRPBF or DGD2113S16-13.

Q: What does the logic voltage specification mean for substitution?

A: Logic voltage VIL (low threshold) and VIH (high threshold) define the input signal levels required for proper gate driver operation. IRS2113STRPBF and DGD2113S16-13 require 6V low and 9.5V high. LF2113BTR requires 5V low and 9.5V high. Designs using 5V logic signals are compatible with LF2113BTR but require level shifting for IRS2113STRPBF and DGD2113S16-13.

Q: Do all substitutes support the same gate types?

A: Yes. All three parts (IRS2113STRPBF, DGD2113S16-13, and LF2113BTR) support IGBT and N-Channel MOSFET gate driving with identical half-bridge independent channel configuration and 2.5A peak output current capability.