IRS2108SPBF Equivalent & Substitute Parts

Part Overview

The IRS2108SPBF is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This device operates with a supply voltage range of 10V to 20V and supports a maximum bootstrap voltage of 600V, making it suitable for high-voltage switching applications.

The IRS2108SPBF carries a "Not For New Designs" product status, indicating that Infineon has discontinued active development for this component. This status necessitates identifying functionally equivalent alternatives that maintain compatibility with existing circuit designs while offering improved availability and potentially enhanced performance characteristics.

Key Parameters

Parameter	IRS2108SPBF
Manufacturer	Infineon Technologies
Driven Configuration	Half-Bridge
Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V
Logic Voltage - VIL, VIH	0.8V, 2.5V
Current - Peak Output (Source, Sink)	290mA, 600mA
Input Type	Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap)	600V
Rise / Fall Time (Typ)	100ns, 35ns
Operating Temperature	-40°C ~ 150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	2 (1 Year)

Substitute Part Grouping Explanation

Substitute parts for the IRS2108SPBF are grouped based on the following critical parameters that determine functional compatibility:

Primary Compatibility Criteria:

Driven Configuration: Half-Bridge (all substitutes maintain this requirement)
Number of Drivers: 2 independent channels
Package / Case: 8-SOIC form factor with 0.154" width and 3.90mm dimensions
Gate Type Support: IGBT and/or N-Channel MOSFET capability
Supply Voltage Range: Minimum 10V to 20V operation
Bootstrap Voltage: 600V maximum rating for high-side switching
Operating Temperature Range: -40°C to 150°C junction temperature

Substitution Logic: Parts are classified into two functional groups based on input type compatibility:

Group 1 - Inverting Input Configuration: L6385ED and L6385ED013TR maintain the inverting input topology of the original IRS2108SPBF, providing direct functional replacement with identical signal inversion characteristics.

Group 2 - Non-Inverting Input Configuration: FAN7382MX, ISL6700IBZ, ISL6700IBZ-T, MIC4100YM, MIC4100YM-TR, MIC4101YM, and MIC4101YM-TR operate with non-inverting inputs, requiring circuit-level input signal adaptation but offering enhanced performance metrics in specific parameters.

Parameter Comparison

Parameter	IRS2108SPBF	L6385ED	L6385ED013TR	FAN7382MX	ISL6700IBZ	ISL6700IBZ-T	MIC4101YM	MIC4101YM-TR
Manufacturer	Infineon	STMicroelectronics	STMicroelectronics	onsemi	Renesas	Renesas	Microchip	Microchip
Driven Configuration	Half-Bridge	Half-Bridge	Half-Bridge	Half-Bridge	Half-Bridge	Half-Bridge	Half-Bridge	Half-Bridge
Number of Drivers	2	2	2	2	2	2	2	2
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET	N-Channel MOSFET	N-Channel MOSFET	N-Channel MOSFET	N-Channel MOSFET
Voltage - Supply	10V ~ 20V	Max 17V	Max 17V	10V ~ 20V	9V ~ 15V	9V ~ 15V	9V ~ 16V	9V ~ 16V
Logic Voltage - VIL, VIH	0.8V, 2.5V	1.5V, 3.6V	1.5V, 3.6V	0.8V, 2.5V	0.8V, 2.2V	0.8V, 2.2V	0.8V, 2.2V	0.8V, 2.2V
Current - Peak Output (Source, Sink)	290mA, 600mA	400mA, 650mA	400mA, 650mA	350mA, 650mA	1.4A, 1.3A	1.4A, 1.3A	2A, 2A	2A, 2A
Input Type	Inverting, Non-Inverting	Inverting	Inverting	Non-Inverting	Non-Inverting	Non-Inverting	Non-Inverting	Non-Inverting
High Side Voltage - Max (Bootstrap)	600V	600V	600V	600V	80V	80V	118V	118V
Rise / Fall Time (Typ)	100ns, 35ns	50ns, 30ns	50ns, 30ns	60ns, 30ns	5ns, 5ns	5ns, 5ns	400ns, 400ns	400ns, 400ns
Operating Temperature	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 125°C	-40°C ~ 125°C	-40°C ~ 125°C	-40°C ~ 125°C
Package / Case	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

For Direct Functional Replacement (Inverting Input Topology):

L6385ED and L6385ED013TR from STMicroelectronics provide the closest functional equivalence to the IRS2108SPBF. Both maintain inverting input configuration, identical 600V bootstrap voltage rating, and support IGBT and N-Channel MOSFET gate types. Both devices carry Active product status with unlimited moisture sensitivity rating (MSL 1), ensuring long-term availability and reliability. The L6385ED013TR variant offers superior packaging availability through Cut Tape and Digi-Reel distribution, with 20,200 units in stock compared to 6,225 units for the standard L6385ED tube packaging.

For Non-Inverting Input Applications:

FAN7382MX from onsemi provides the highest performance match among non-inverting alternatives, maintaining the 600V bootstrap voltage specification and supporting both IGBT and N-Channel MOSFET configurations. This device offers improved rise/fall time characteristics (60ns/30ns) and higher peak output current (350mA source, 650mA sink) compared to the original IRS2108SPBF. FAN7382MX carries Active product status with MSL 1 rating and 22,200 units in stock.

For Applications with Lower Bootstrap Voltage Requirements:

ISL6700IBZ and ISL6700IBZ-T from Renesas Electronics provide non-inverting alternatives suitable for applications where the 80V bootstrap voltage limitation is acceptable. These devices deliver exceptional switching speed (5ns rise/fall time) and high peak output current (1.4A source, 1.3A sink), making them suitable for high-frequency switching applications. Both variants carry Active product status with unlimited MSL rating.

MIC4101YM and MIC4101YM-TR from Microchip Technology offer non-inverting alternatives with 118V bootstrap voltage and 2A peak output current capability. These devices support the full -40°C to 125°C operating temperature range and carry Active product status with unlimited MSL rating.

Compliance and Regulatory Considerations:

All substitute parts maintain ROHS3 compliance and EAR99 export classification, matching the regulatory profile of the original IRS2108SPBF. All alternatives carry REACH Unaffected status, ensuring compliance with chemical substance regulations.

Frequently Asked Questions (FAQ)

Q: Can L6385ED directly replace IRS2108SPBF without circuit modifications?

A: L6385ED maintains identical inverting input topology and 600V bootstrap voltage rating, enabling direct pin-compatible replacement in most applications. However, verify that your circuit design accommodates the different logic voltage thresholds (L6385ED: 1.5V/3.6V versus IRS2108SPBF: 0.8V/2.5V) and the slightly different rise/fall time characteristics (L6385ED: 50ns/30ns versus IRS2108SPBF: 100ns/35ns).

Q: What is the primary limitation of ISL6700IBZ and ISL6700IBZ-T compared to IRS2108SPBF?

A: The ISL6700 series devices support a maximum bootstrap voltage of 80V, compared to 600V for the IRS2108SPBF. This limitation restricts their use to applications with lower high-side voltage requirements. Additionally, these devices support only N-Channel MOSFET gate types, not IGBT configurations.

Q: Are all substitute parts available in the same 8-SOIC package?

A: Yes, all substitute parts listed maintain the 8-SOIC (0.154", 3.90mm Width) package form factor, ensuring mechanical compatibility with existing PCB layouts. FAN7382MX includes an exposed pad variant of the 8-SOIC package, which may provide improved thermal performance in high-power applications.

Q: What is the difference between MIC4101YM and MIC4100YM?

A: Both devices share identical electrical specifications and packaging. The primary difference is the logic voltage threshold specification: MIC4101YM specifies 0.8V/2.2V (VIL/VIH), while MIC4100YM specifies 3V/8V. MIC4101YM provides better compatibility with the IRS2108SPBF logic voltage thresholds.

Q: Do all substitute parts support IGBT gate driving?

A: No. L6385ED, L6385ED013TR, and FAN7382MX support both IGBT and N-Channel MOSFET gate types. ISL6700IBZ, ISL6700IBZ-T, MIC4100YM, MIC4100YM-TR, MIC4101YM, and MIC4101YM-TR support only N-Channel MOSFET configurations. Verify your application's gate type requirement before selection.

Q: What is the significance of the "-TR" suffix in part numbers?

A: The "-TR" suffix indicates Tape & Reel packaging format, suitable for automated assembly processes. Parts without this suffix are supplied in Tube packaging. Both formats contain identical die and electrical specifications; the difference is purely in packaging and distribution method.

Q: Which substitute offers the best thermal performance?

A: FAN7382MX includes an exposed pad variant of the 8-SOIC package, which provides improved thermal dissipation compared to standard 8-SOIC packages without exposed pads. This feature is beneficial in high-frequency or high-current switching applications where junction temperature management is critical.

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