IRS2004SPBF Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The IRS2004SPBF is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This device features non-inverting logic inputs, dual synchronous channels, and operates across a 10V to 20V supply voltage range with a maximum bootstrap voltage of 200V.

The IRS2004SPBF is classified as obsolete. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications utilizing this gate driver topology.

Substiute Parts

IRS2004SPBF
Infineon TechnologiesIn Stock: 1486IRS2004SPBF Datasheet
IRS2004SPBF
Current Part
DGD1504S8-13
Diodes IncorporatedIn Stock: 3531DGD1504S8-13 Datasheet
DGD1504S8-13
Direct

Key Parameters

Parameter Value
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V
Current - Peak Output (Source, Sink) 290mA, 600mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 200V
Rise / Fall Time (Typ) 70ns, 35ns
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IRS2004SPBF is determined by strict equivalence across the following critical parameters:

Functional Requirements:

  • Half-bridge driven configuration with dual synchronous channels
  • Non-inverting logic input type
  • IGBT and N-Channel MOSFET gate drive capability

Electrical Specifications:

  • Supply voltage range: 10V ~ 20V
  • Logic threshold levels: VIL 0.8V, VIH 2.5V
  • Peak output current: 290mA source, 600mA sink
  • Rise/fall time characteristics: 70ns rise, 35ns fall (typical)
  • Operating temperature range: -40°C ~ 150°C

Physical & Environmental:

  • 8-SOIC surface mount package (0.154" width, 3.90mm)
  • ROHS3 compliance
  • REACH unaffected status

The DGD1504S8-13 from Diodes Incorporated meets all functional and electrical requirements for direct substitution. The primary distinction is the maximum bootstrap voltage specification (250V versus 200V), which represents an enhanced capability rather than a limitation for applications designed around the IRS2004SPBF.

Parameter Comparison

Parameter IRS2004SPBF (Infineon) DGD1504S8-13 (Diodes Inc.)
Driven Configuration Half-Bridge Half-Bridge
Channel Type Synchronous Synchronous
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V 0.8V, 2.5V
Current - Peak Output (Source, Sink) 290mA, 600mA 290mA, 600mA
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 200V 250V
Rise / Fall Time (Typ) 70ns, 35ns 70ns, 35ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Active

Engineering Selection Recommendations

The DGD1504S8-13 is a direct functional equivalent to the IRS2004SPBF for half-bridge gate driver applications. Both devices maintain identical electrical performance across supply voltage, logic thresholds, output current ratings, and timing characteristics. Both are ROHS3 compliant and REACH unaffected.

The DGD1504S8-13 offers the advantage of active product status with current manufacturing availability (3497 units in stock versus 1402 units for the obsolete IRS2004SPBF). The enhanced bootstrap voltage rating (250V maximum versus 200V) provides additional design margin without requiring circuit modifications.

Pin-to-pin compatibility and identical package geometry (8-SOIC, 0.154" width) enable direct PCB substitution without layout changes.

Frequently Asked Questions (FAQ)

Q: Can the DGD1504S8-13 replace the IRS2004SPBF in existing designs?

A: Yes. The DGD1504S8-13 is functionally equivalent across all critical parameters: half-bridge configuration, dual synchronous channels, non-inverting logic inputs, identical supply voltage range (10V ~ 20V), matching logic thresholds (0.8V, 2.5V), equivalent output current ratings (290mA source, 600mA sink), and identical timing characteristics (70ns rise, 35ns fall). Pin-to-pin compatibility and identical 8-SOIC packaging enable direct substitution without circuit redesign.

Q: What is the difference in bootstrap voltage specifications?

A: The IRS2004SPBF specifies a maximum bootstrap voltage of 200V, while the DGD1504S8-13 specifies 250V. This difference represents an enhanced capability in the substitute part. Applications designed for the 200V specification will operate within the DGD1504S8-13 rating without modification.

Q: Are there compliance or certification differences?

A: Both devices are ROHS3 compliant and REACH unaffected. No compliance barriers exist for substitution.

Q: What packaging considerations apply to this substitution?

A: Both the IRS2004SPBF and DGD1504S8-13 use identical 8-SOIC surface mount packages (0.154" width, 3.90mm). No PCB layout modifications are required. The primary packaging difference is the supplier format: IRS2004SPBF is supplied in tubes, while DGD1504S8-13 is supplied in tape and reel format.

Q: Why is the IRS2004SPBF classified as obsolete?

A: The IRS2004SPBF is listed as obsolete by Infineon Technologies. The DGD1504S8-13 maintains active product status with ongoing manufacturing support, making it the recommended choice for new designs and ongoing production requirements.

Request Quote (Ships tomorrow)