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IRS2001PBF Equivalent & Substitute Parts
Part Overview
The IRS2001PBF is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET devices in half-bridge configurations. This device operates with a supply voltage range of 10V to 20V and features independent dual-channel architecture with non-inverting input logic.
The IRS2001PBF is classified as obsolete. Identifying suitable substitute components is necessary to maintain design continuity and ensure availability for new production runs and system upgrades.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | IRS2001PBF |
| Manufacturer | Infineon Technologies |
| Category | Power Management (PMIC) |
| Description | IC GATE DRVR HALF-BRIDGE 8DIP |
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 2.5V |
| Current - Peak Output (Source, Sink) | 290mA, 600mA |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 200V |
| Rise / Fall Time (Typ) | 70ns, 35ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the IRS2001PBF is determined by the following critical parameters:
- Supply Voltage Range: 10V ~ 20V (must match or encompass this range)
- Package Type: 8-DIP (0.300", 7.62mm) through-hole mounting
- Number of Drivers: 2 independent channels
- Bootstrap Voltage Rating: 200V maximum
- Operating Temperature Range: -40°C ~ 150°C (TJ)
- Gate Type Compatibility: IGBT and N-Channel MOSFET support
The IR2011PBF qualifies as a substitute based on matching supply voltage range, package configuration, dual-channel architecture, bootstrap voltage rating, and operating temperature range. Both devices support the same gate types and maintain compatible thermal specifications.
Parameter Comparison
| Parameter | IRS2001PBF | IR2011PBF |
|---|---|---|
| Manufacturer | Infineon Technologies | International Rectifier |
| Driven Configuration | Half-Bridge | High-Side or Low-Side |
| Number of Drivers | 2 | 2 |
| Gate Type | IGBT, N-Channel MOSFET | N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 2.5V | 0.7V, 2.2V |
| Current - Peak Output (Source, Sink) | 290mA, 600mA | 1A, 1A |
| Input Type | Non-Inverting | Inverting |
| High Side Voltage - Max (Bootstrap) | 200V | 200V |
| Rise / Fall Time (Typ) | 70ns, 35ns | 35ns, 20ns |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Package / Case | 8-DIP (0.300", 7.62mm) | 8-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole | Through Hole |
| Product Status | Obsolete | Active |
Engineering Selection Recommendations
The IR2011PBF is an active product with current manufacturer support, addressing the obsolescence status of the IRS2001PBF. Both devices share identical supply voltage specifications, bootstrap voltage ratings, operating temperature ranges, and 8-DIP package configurations, enabling direct PCB compatibility.
The IR2011PBF provides superior output current capability (1A source and sink versus 290mA source and 600mA sink) and faster switching characteristics (35ns and 20ns rise/fall times versus 70ns and 35ns). These performance improvements are compatible with half-bridge applications.
Design consideration: The IR2011PBF features inverting input logic compared to the non-inverting input of the IRS2001PBF. Circuit-level input signal inversion is required during implementation to maintain functional equivalence.
Both devices maintain ROHS3 compliance and EAR99 export classification, supporting regulatory continuity in production environments.
Frequently Asked Questions (FAQ)
Q: Can the IR2011PBF directly replace the IRS2001PBF without PCB modifications?
A: The IR2011PBF uses the same 8-DIP package footprint and pin count, enabling direct PCB placement. However, the inverting input logic requires signal-level modification in the control circuit. No PCB layout changes are necessary.
Q: What is the primary difference between these two gate drivers?
A: The IRS2001PBF is a half-bridge specific driver with non-inverting inputs, while the IR2011PBF is a configurable high-side or low-side driver with inverting inputs. Both support identical supply voltages, bootstrap ratings, and temperature ranges.
Q: Are there any compatibility concerns with IGBT applications?
A: The IRS2001PBF explicitly supports IGBT gate driving. The IR2011PBF specification lists N-Channel MOSFET support. IGBT compatibility with the IR2011PBF requires verification against specific IGBT gate charge and timing requirements in your application.
Q: How do the output current specifications affect substitution?
A: The IR2011PBF provides higher peak output current (1A source/sink) compared to the IRS2001PBF (290mA source, 600mA sink). This improvement is compatible with half-bridge topologies and does not create functional conflicts.
Q: What is the impact of faster switching times in the IR2011PBF?
A: The IR2011PBF exhibits faster rise and fall times (35ns and 20ns versus 70ns and 35ns). This reduces switching delays and may improve system efficiency. Verify that your power stage and PCB layout support these faster transitions to avoid EMI or signal integrity issues.
Q: Are both devices RoHS compliant?
A: The IRS2001PBF is ROHS3 compliant. The IR2011PBF compliance status is not specified in the provided data. Verify ROHS certification status with the manufacturer before final component selection for regulated applications.
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