IRS2001PBF Equivalent & Substitute Parts

Part Overview

The IRS2001PBF is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET devices in half-bridge configurations. This device operates with a supply voltage range of 10V to 20V and features independent dual-channel architecture with non-inverting input logic.

The IRS2001PBF is classified as obsolete. Identifying suitable substitute components is necessary to maintain design continuity and ensure availability for new production runs and system upgrades.

Substiute Parts

IRS2001PBF
Infineon TechnologiesIn Stock: 19812IRS2001PBF Datasheet
IRS2001PBF
Current Part
IR2011PBF
International RectifierIn Stock: 1396IR2011PBF Datasheet
IR2011PBF
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Part Number IRS2001PBF
Manufacturer Infineon Technologies
Category Power Management (PMIC)
Description IC GATE DRVR HALF-BRIDGE 8DIP
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V
Current - Peak Output (Source, Sink) 290mA, 600mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 200V
Rise / Fall Time (Typ) 70ns, 35ns
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 8-DIP (0.300", 7.62mm)
Mounting Type Through Hole
Product Status Obsolete
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IRS2001PBF is determined by the following critical parameters:

  • Supply Voltage Range: 10V ~ 20V (must match or encompass this range)
  • Package Type: 8-DIP (0.300", 7.62mm) through-hole mounting
  • Number of Drivers: 2 independent channels
  • Bootstrap Voltage Rating: 200V maximum
  • Operating Temperature Range: -40°C ~ 150°C (TJ)
  • Gate Type Compatibility: IGBT and N-Channel MOSFET support

The IR2011PBF qualifies as a substitute based on matching supply voltage range, package configuration, dual-channel architecture, bootstrap voltage rating, and operating temperature range. Both devices support the same gate types and maintain compatible thermal specifications.

Parameter Comparison

Parameter IRS2001PBF IR2011PBF
Manufacturer Infineon Technologies International Rectifier
Driven Configuration Half-Bridge High-Side or Low-Side
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V 0.7V, 2.2V
Current - Peak Output (Source, Sink) 290mA, 600mA 1A, 1A
Input Type Non-Inverting Inverting
High Side Voltage - Max (Bootstrap) 200V 200V
Rise / Fall Time (Typ) 70ns, 35ns 35ns, 20ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Package / Case 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm)
Mounting Type Through Hole Through Hole
Product Status Obsolete Active

Engineering Selection Recommendations

The IR2011PBF is an active product with current manufacturer support, addressing the obsolescence status of the IRS2001PBF. Both devices share identical supply voltage specifications, bootstrap voltage ratings, operating temperature ranges, and 8-DIP package configurations, enabling direct PCB compatibility.

The IR2011PBF provides superior output current capability (1A source and sink versus 290mA source and 600mA sink) and faster switching characteristics (35ns and 20ns rise/fall times versus 70ns and 35ns). These performance improvements are compatible with half-bridge applications.

Design consideration: The IR2011PBF features inverting input logic compared to the non-inverting input of the IRS2001PBF. Circuit-level input signal inversion is required during implementation to maintain functional equivalence.

Both devices maintain ROHS3 compliance and EAR99 export classification, supporting regulatory continuity in production environments.

Frequently Asked Questions (FAQ)

Q: Can the IR2011PBF directly replace the IRS2001PBF without PCB modifications?

A: The IR2011PBF uses the same 8-DIP package footprint and pin count, enabling direct PCB placement. However, the inverting input logic requires signal-level modification in the control circuit. No PCB layout changes are necessary.

Q: What is the primary difference between these two gate drivers?

A: The IRS2001PBF is a half-bridge specific driver with non-inverting inputs, while the IR2011PBF is a configurable high-side or low-side driver with inverting inputs. Both support identical supply voltages, bootstrap ratings, and temperature ranges.

Q: Are there any compatibility concerns with IGBT applications?

A: The IRS2001PBF explicitly supports IGBT gate driving. The IR2011PBF specification lists N-Channel MOSFET support. IGBT compatibility with the IR2011PBF requires verification against specific IGBT gate charge and timing requirements in your application.

Q: How do the output current specifications affect substitution?

A: The IR2011PBF provides higher peak output current (1A source/sink) compared to the IRS2001PBF (290mA source, 600mA sink). This improvement is compatible with half-bridge topologies and does not create functional conflicts.

Q: What is the impact of faster switching times in the IR2011PBF?

A: The IR2011PBF exhibits faster rise and fall times (35ns and 20ns versus 70ns and 35ns). This reduces switching delays and may improve system efficiency. Verify that your power stage and PCB layout support these faster transitions to avoid EMI or signal integrity issues.

Q: Are both devices RoHS compliant?

A: The IRS2001PBF is ROHS3 compliant. The IR2011PBF compliance status is not specified in the provided data. Verify ROHS certification status with the manufacturer before final component selection for regulated applications.

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