IRLZ44ZSTRLPBF N-Channel 55V 51A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLZ44ZSTRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 51A continuous drain current in the D2PAK surface mount package. This device is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts maintain functional compatibility within specified electrical and mechanical parameters while offering active product support and availability.

Substiute Parts

IRLZ44ZSTRLPBF
Infineon TechnologiesIn Stock: 2504IRLZ44ZSTRLPBF Datasheet
IRLZ44ZSTRLPBF
Current Part
IPB50N10S3L16ATMA1
Infineon TechnologiesIn Stock: 3391IPB50N10S3L16ATMA1 Datasheet
IPB50N10S3L16ATMA1
MFR Recommended
IRLZ44SPBF
Vishay SiliconixIn Stock: 1548IRLZ44SPBF Datasheet
IRLZ44SPBF
MFR Recommended
IRLZ44STRRPBF
Vishay SiliconixIn Stock: 4085IRLZ44STRRPBF Datasheet
IRLZ44STRRPBF
MFR Recommended
PSMN015-60BS,118
Nexperia USA Inc.In Stock: 12771PSMN015-60BS,118 Datasheet
PSMN015-60BS,118
MFR Recommended
PSMN7R6-60BS,118
Nexperia USA Inc.In Stock: 8919PSMN7R6-60BS,118 Datasheet
PSMN7R6-60BS,118
MFR Recommended
STB140NF55T4
STMicroelectronicsIn Stock: 15448STB140NF55T4 Datasheet
STB140NF55T4
MFR Recommended
STB150NF55T4
STMicroelectronicsIn Stock: 10285STB150NF55T4 Datasheet
STB150NF55T4
MFR Recommended
STB55NF06LT4
STMicroelectronicsIn Stock: 1382STB55NF06LT4 Datasheet
STB55NF06LT4
MFR Recommended
STB55NF06T4
STMicroelectronicsIn Stock: 18921STB55NF06T4 Datasheet
STB55NF06T4
MFR Recommended
STB85NF55LT4
STMicroelectronicsIn Stock: 2222STB85NF55LT4 Datasheet
STB85NF55LT4
MFR Recommended
STB85NF55T4
STMicroelectronicsIn Stock: 29424STB85NF55T4 Datasheet
STB85NF55T4
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 55 V
Continuous Drain Current @ 25°C (Id) 51 A
On-State Resistance @ 31A, 10V (Rds On Max) 13.5 mOhm
Gate Threshold Voltage @ 250µA (Vgs(th) Max) 3 V
Gate Charge @ 5V (Qg Max) 36 nC
Power Dissipation (Tc) 80 W
Operating Temperature Range -55 to 175 °C
Package Type D2PAK (TO-263-3)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the IRLZ44ZSTRLPBF are selected based on the following electrical and mechanical compatibility criteria:

Primary Substitution Parameters:

  • Drain-to-Source Voltage (Vdss): 55V or higher
  • Continuous Drain Current (Id): 50A or higher at 25°C
  • Package Type: D2PAK (TO-263-3) surface mount
  • Mounting Type: Surface mount
  • Operating Temperature Range: -55°C to 175°C minimum
  • RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Factors:

  • On-State Resistance (Rds On): Lower or equivalent values preferred
  • Gate Threshold Voltage (Vgs(th)): Within ±1V of original specification
  • Gate Charge (Qg): Values up to 190nC acceptable for switching applications
  • Power Dissipation: 80W or higher

Substitute parts are grouped into two categories: direct equivalents (same voltage and current ratings) and functional substitutes (higher voltage or current ratings that operate within the same application envelope).

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max (mOhm) Vgs(th) Max (V) Qg Max (nC) Power Diss. (W) Package Status
IRLZ44ZSTRLPBF Infineon 55 51 13.5 3 36 80 D2PAK Obsolete
STB150NF55T4 STMicroelectronics 55 120 6 4 190 300 D2PAK Active
STB85NF55T4 STMicroelectronics 55 80 8 4 142 300 D2PAK Active
STB85NF55LT4 STMicroelectronics 55 80 8 2.5 110 300 D2PAK Active
PSMN7R6-60BS,118 Nexperia USA Inc. 60 92 7.8 4 38.7 149 D2PAK Active
PSMN015-60BS,118 Nexperia USA Inc. 60 50 14.8 4 20.9 86 D2PAK Active
STB55NF06T4 STMicroelectronics 60 50 18 4 60 110 D2PAK Active
STB55NF06LT4 STMicroelectronics 60 55 18 4.7 37 95 D2PAK Active
IRLZ44SPBF Vishay Siliconix 60 50 28 2 66 150 D2PAK Active
IRLZ44STRRPBF Vishay Siliconix 60 50 28 2 66 150 D2PAK Active
IPB50N10S3L16ATMA1 Infineon Technologies 100 50 15.4 2.4 64 100 D2PAK Active

Engineering Selection Recommendations

Direct Voltage Rating Substitutes (55V):

STB150NF55T4, STB85NF55T4, and STB85NF55LT4 from STMicroelectronics maintain the 55V Vdss rating of the original IRLZ44ZSTRLPBF. These parts are classified as active products with full manufacturer support. STB150NF55T4 provides the highest current rating (120A) and lowest on-state resistance (6mOhm), suitable for applications requiring enhanced current handling. STB85NF55T4 and STB85NF55LT4 offer 80A ratings with improved power dissipation (300W vs. 80W), with STB85NF55LT4 featuring a lower gate threshold voltage (2.5V) for reduced drive requirements.

60V Voltage Rating Substitutes:

PSMN7R6-60BS,118 and PSMN015-60BS,118 from Nexperia USA Inc., along with STB55NF06T4, STB55NF06LT4, IRLZ44SPBF, and IRLZ44STRRPBF from Vishay Siliconix, operate at 60V Vdss. These parts are suitable for applications where the 55V rating of the original device provides adequate margin. PSMN7R6-60BS,118 delivers 92A continuous current with 7.8mOhm on-state resistance. PSMN015-60BS,118 matches the 50A current rating with 14.8mOhm resistance. Vishay parts (IRLZ44SPBF and IRLZ44STRRPBF) are identical specifications with different packaging (Tube vs. Tape & Reel).

Higher Voltage Substitute (100V):

IPB50N10S3L16ATMA1 from Infineon Technologies operates at 100V Vdss with 50A continuous current. This part is classified as active product status and provides additional voltage margin for applications subject to transient overvoltage conditions. The 15.4mOhm on-state resistance and 100W power dissipation are comparable to the original specification.

All recommended substitutes are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental compliance of the original part.

Frequently Asked Questions (FAQ)

Q: Can STB150NF55T4 replace IRLZ44ZSTRLPBF in all applications?

A: STB150NF55T4 maintains the same 55V Vdss rating and exceeds the 51A current requirement with 120A capability. The lower on-state resistance (6mOhm vs. 13.5mOhm) reduces power dissipation. However, the higher gate charge (190nC vs. 36nC) requires verification of gate drive circuit capability. The higher threshold voltage (4V vs. 3V) may affect switching speed in low-voltage gate drive circuits.

Q: What is the difference between IRLZ44SPBF and IRLZ44STRRPBF?

A: Both parts are identical in electrical specifications (60V, 50A, 28mOhm Rds On). The difference is packaging: IRLZ44SPBF is supplied in Tube packaging, while IRLZ44STRRPBF is supplied in Tape & Reel (TR) format. Selection depends on assembly process requirements and volume handling.

Q: Why does PSMN7R6-60BS,118 have lower on-state resistance than the original part?

A: PSMN7R6-60BS,118 is rated for 92A continuous current compared to 51A for IRLZ44ZSTRLPBF. The lower on-state resistance (7.8mOhm) is a result of larger die area and optimized channel design for higher current handling. This provides improved efficiency in high-current applications.

Q: Is IPB50N10S3L16ATMA1 suitable for 55V applications?

A: IPB50N10S3L16ATMA1 is rated for 100V Vdss, which exceeds the 55V requirement of the original application. This part is suitable for 55V operation and provides additional voltage margin for transient protection. The 50A current rating matches the original specification. Verify that the higher gate charge (64nC) is compatible with the gate drive circuit.

Q: Are all substitute parts available in the same D2PAK package?

A: All recommended substitute parts use the D2PAK (TO-263-3) surface mount package with identical pinout and thermal tab configuration. Package compatibility is confirmed across all substitutes listed.

Q: What is the impact of different gate threshold voltages on circuit performance?

A: Gate threshold voltage (Vgs(th)) affects the minimum gate voltage required to turn on the device. Original IRLZ44ZSTRLPBF specifies 3V maximum. Substitutes range from 2V (IRLZ44SPBF, IRLZ44STRRPBF) to 4.7V (STB55NF06LT4). Lower threshold voltages enable operation with lower gate drive voltages, while higher values require stronger drive circuits. Verify gate drive voltage compatibility with selected substitute.

Q: Can 60V-rated parts be used in 55V applications?

A: Yes. 60V-rated MOSFETs operate safely in 55V applications. The voltage rating represents the maximum drain-to-source voltage the device can withstand. Operating at 55V provides margin below the 60V maximum rating. Confirm that the application does not experience transient voltages exceeding 60V.

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