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IRLZ34S Equivalent & Substitute Parts Reference
Part Overview
The IRLZ34S from Vishay Siliconix is an N-Channel MOSFET rated for 60 V drain-to-source voltage and 30A continuous drain current (Tc) in a D2PAK (TO-263-3) surface-mount package. With an Rds(on) of 50 mOhm @ 18A, 5V, and a gate threshold voltage of 2V @ 250µA, the device supports high efficiency switching in power management and motor drive applications. The product is classified as obsolete, making it necessary to identify alternative MOSFETs that match the required electrical and mechanical specifications for drop-in replacement.
Substiute Parts
Key Parameters
| Manufacturer Part Number | Drain to Source Voltage (Vdss) | Continuous Drain Current (Id @ 25°C) | Rds(on) (Max) | Drive Voltage | Vgs(th) (Max) | Gate Charge (Qg) (Max) | Vgs (Max) | Input Capacitance (Ciss, Max) | Power Dissipation (Max) | Operating Temperature | Mounting Type | Package / Case | RoHS Status | MSL |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLZ34S | 60 V | 30A (Tc) | 50mOhm @ 18A, 5V | 4V, 5V | 2V @ 250µA | 35 nC @ 5V | ±10V | 1600 pF @ 25 V | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK | RoHS non-compliant | 1 (Unlimited) |
Substitute Part Grouping Explanation
Grouping of substitute MOSFETs is based strictly on key substitutable parameters: N-Channel FET type, drain-to-source voltage (Vdss), continuous drain current (Id @ 25°C), maximum Rds(on), gate threshold voltage (Vgs(th)), gate charge (Qg, max), maximum Vgs, input capacitance (Ciss), power dissipation, mounting type, package / case, RoHS compliance, and Moisture Sensitivity Level (MSL). Only parts matching or exceeding these values and mechanical compatibilities in the provided category and package were included.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Category | Drain to Source Voltage (Vdss) | Continuous Drain Current (Id @ 25°C) | Rds(on) (Max) | Drive Voltage | Vgs(th) (Max) | Gate Charge (Qg, Max) | Vgs (Max) | Input Capacitance (Ciss, Max) | Power Dissipation (Max) | Operating Temperature | Mounting Type | Package / Case | RoHS Status | MSL |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLZ34S | Vishay Siliconix | Transistors, FETs, MOSFETs | 60 V | 30A (Tc) | 50mOhm @ 18A, 5V | 4V, 5V | 2V @ 250µA | 35 nC @ 5V | ±10V | 1600 pF @ 25 V | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK | RoHS non-compliant | 1 (Unlimited) |
| IRLZ34SPBF | Vishay Siliconix | Transistors, FETs, MOSFETs | 60 V | 30A (Tc) | 50mOhm @ 18A, 5V | 4V, 5V | 2V @ 250µA | 35 nC @ 5V | ±10V | 1600 pF @ 25 V | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK | ROHS3 Compliant | 1 (Unlimited) |
| IRLZ34NSTRLPBF | Infineon Technologies | Transistors, FETs, MOSFETs | 55 V | 30A (Tc) | 35mOhm @ 16A, 10V | 4V, 10V | 2V @ 250µA | 25 nC @ 5V | ±16V | 880 pF @ 25 V | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK | ROHS3 Compliant | 1 (Unlimited) |
| PHB29N08T,118 | NXP Semiconductors | Transistors, FETs, MOSFETs | 75 V | 27A (Tc) | 50mOhm @ 14A, 11V | 11V | 5V @ 2mA | 19 nC @ 10V | ±30V | 810 pF @ 25 V | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK | - | 1 (Unlimited) |
| PSMN015-60BS,118 | Nexperia USA Inc. | Transistors, FETs, MOSFETs | 60 V | 50A (Tc) | 14.8mOhm @ 15A, 10V | 10V | 4V @ 1mA | 20.9 nC @ 10V | ±20V | 1220 pF @ 30 V | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D2PAK | ROHS3 Compliant | 1 (Unlimited) |
Engineering Selection Recommendations
Selection of substitute parts for the obsolete IRLZ34S is driven by active product status, matching electrical parameters, mounting compatibility, and RoHS3 compliance. IRLZ34SPBF offers direct parametric equivalence and RoHS3 compliance. IRLZ34NSTRLPBF meets all core electrical needs and maintains appropriate packaging and compliance. PSMN015-60BS,118 and PHB29N08T,118 provide similar electrical characteristics and retain D2PAK mounting, with PSMN015-60BS,118 marked as RoHS3 compliant. PHB29N08T,118 does not specify RoHS status in the provided data.
Frequently Asked Questions (FAQ)
Q: What criteria were used for substitute selection for IRLZ34S?
Only provided parameters were evaluated: FET type, Vdss, Id (continuous drain current), Rds(on), drive voltage, gate threshold voltage, gate charge, Vgs (max), input capacitance, power dissipation, operating temperature, mounting type, package, RoHS status, and MSL.
Q: Are all substitutes compatible with the IRLZ34S footprint?
Yes, all listed substitutes are surface mount MOSFETs in a TO-263-3, D2PAK package, matching mechanical and layout compatibility as specified.
Q: How does RoHS compliance affect substitute selection?
RoHS3 compliant alternatives are prioritized where available. IRLZ34SPBF, IRLZ34NSTRLPBF, and PSMN015-60BS,118 are RoHS3 compliant per supplied data; IRLZ34S is not.
Q: Can the substitutes handle similar electrical loads?
Substitute parts meet or exceed the IRLZ34S specifications in Vdss, Id, Rds(on), and power dissipation according to the provided input.
Q: Is there any difference in mounting technique or thermal management?
All substitutes utilize surface mounting in the TO-263-3, D2PAK package with equivalent thermal characteristics as specified.
Q: Are all substitutes at the same Moisture Sensitivity Level?
All listed parts specify MSL 1 (unlimited floor life), matching the original IRLZ34S.
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