IRLZ24NPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLZ24NPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 18A continuous drain current at 25°C. This device features a TO-220AB through-hole package and is part of the HEXFET® series. The part is classified as "Not For New Designs," indicating it has been superseded in Infineon's product portfolio. Equivalent and substitute parts are necessary for applications requiring continued sourcing, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Substiute Parts

IRLZ24NPBF

Infineon TechnologiesIn Stock: 15330IRLZ24NPBF Datasheet

Current PartRFQ

IRFB3806PBF

Infineon TechnologiesIn Stock: 1514IRFB3806PBF Datasheet

MFR RecommendedRFQ

IRLZ24PBF

Vishay SiliconixIn Stock: 1355IRLZ24PBF Datasheet

MFR RecommendedRFQ

PHP191NQ06LT,127

Nexperia USA Inc.In Stock: 3002PHP191NQ06LT,127 Datasheet

MFR RecommendedRFQ

STP36NF06L

STMicroelectronicsIn Stock: 1344STP36NF06L Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRLZ24NPBF is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must be equal to or greater than 55V
• Continuous Drain Current (Id) must be equal to or greater than 18A at 25°C
• On-State Resistance (Rds On) must support the application's switching and thermal requirements
• Gate Threshold Voltage (Vgs(th)) must be compatible with the drive circuit
• Operating temperature range must encompass -55°C to 175°C

Mechanical Compatibility Criteria:

• Package type must be TO-220AB or equivalent TO-220-3 through-hole configuration
• Mounting type must be through-hole
• Pin configuration must be compatible with existing PCB layouts

The substitute parts listed below meet these criteria with varying performance enhancements or trade-offs in current capacity, on-state resistance, and power dissipation.

Parameter Comparison

Engineering Selection Recommendations

IRFB3806PBF (Infineon Technologies)

This part is recommended as the primary substitute for new designs and ongoing production. It maintains Infineon HEXFET® series compatibility and carries Active product status. The IRFB3806PBF exceeds the IRLZ24NPBF in drain current (43A vs. 18A) and power dissipation (71W vs. 45W), providing design margin for higher-current applications. The increased Vdss rating (60V vs. 55V) offers additional voltage headroom. On-state resistance is significantly lower (15.8mOhm vs. 60mOhm), reducing conduction losses. All compliance certifications (ROHS3, REACH Unaffected, EAR99) are maintained.

IRLZ24PBF (Vishay Siliconix)

This part provides a close electrical match with nearly identical gate threshold voltage and gate charge characteristics. Manufactured by Vishay Siliconix, it maintains the same base product number (IRLZ24) and offers Active product status. The Vdss rating is increased to 60V, and continuous drain current is comparable (17A vs. 18A). On-state resistance is higher (100mOhm vs. 60mOhm), which may increase thermal dissipation in high-current applications. This substitute is suitable for direct replacement in existing designs with minimal circuit modifications.

STP36NF06L (STMicroelectronics)

This part is recommended for applications requiring higher current capacity (30A vs. 18A) and improved thermal performance (70W vs. 45W). The STripFET™ II series technology provides lower on-state resistance (40mOhm vs. 60mOhm). The Vdss rating is increased to 60V. Gate charge is comparable (17nC vs. 15nC), ensuring compatible drive circuit performance. Product status is Active with full ROHS3 compliance. The TO-220 package is mechanically compatible with TO-220AB footprints.

PHP191NQ06LT,127 (Nexperia USA Inc.)

This part is not recommended for new designs due to Obsolete product status. However, it may be considered for legacy system maintenance or applications requiring exceptional current capacity (75A) and minimal on-state resistance (3.7mOhm). The significantly higher gate charge (95.6nC vs. 15nC) requires careful evaluation of drive circuit capabilities. Power dissipation capability is substantially higher (300W vs. 45W), suitable only for high-power applications. Sourcing availability is limited.

Frequently Asked Questions (FAQ)

Q: Can I use IRFB3806PBF as a direct replacement for IRLZ24NPBF?

A: Yes. The IRFB3806PBF is electrically and mechanically compatible. It meets or exceeds all critical parameters: Vdss (60V ≥ 55V), Id (43A ≥ 18A), and operating temperature range (-55°C to 175°C). The TO-220AB package is identical. The higher performance specifications provide design margin without requiring circuit modifications.

Q: What is the difference between IRLZ24PBF and IRLZ24NPBF?

A: IRLZ24PBF is manufactured by Vishay Siliconix, while IRLZ24NPBF is manufactured by Infineon Technologies. Both share the same base product number (IRLZ24) and have nearly identical electrical characteristics. The primary difference is manufacturer and product status: IRLZ24PBF is Active, while IRLZ24NPBF is Not For New Designs. Vdss is increased to 60V in the Vishay part.

Q: Why does PHP191NQ06LT,127 have such high gate charge compared to other substitutes?

A: The PHP191NQ06LT,127 is designed for high-current applications (75A) and features TrenchMOS™ technology with significantly larger die area. Higher gate charge (95.6nC) is a direct result of increased input capacitance (7665pF vs. 480pF in the main part). This requires a more robust gate drive circuit with higher current capability. The trade-off is exceptional on-state resistance (3.7mOhm) and power handling (300W).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (IRFB3806PBF, IRLZ24PBF, PHP191NQ06LT,127, and STP36NF06L) are ROHS3 Compliant. The main part IRLZ24NPBF is also ROHS3 Compliant. All parts have Moisture Sensitivity Level (MSL) of 1 (Unlimited).

Q: Can I use STP36NF06L in a circuit designed for IRLZ24NPBF?

A: Yes. The STP36NF06L is mechanically and electrically compatible. It provides higher current capacity (30A vs. 18A) and improved on-state resistance (40mOhm vs. 60mOhm). The gate threshold voltage (2.5V) is slightly higher than the main part (2V), which may require minor gate drive circuit adjustment. The TO-220 package is compatible with TO-220AB footprints.

Q: What is the significance of "Not For New Designs" status for IRLZ24NPBF?

A: This status indicates that Infineon has discontinued active development and marketing of this part. While existing inventory remains available, the manufacturer recommends using alternative parts for new designs. This status does not affect the functionality or reliability of existing stock but signals that long-term availability may be limited.

Q: Which substitute offers the best on-state resistance performance?

A: The PHP191NQ06LT,127 offers the lowest on-state resistance at 3.7mOhm (measured at 25A, 10V), compared to 60mOhm for the main part. However, this comes with significantly higher gate charge (95.6nC) and higher power dissipation capability (300W). For most applications, the IRFB3806PBF (15.8mOhm) or STP36NF06L (40mOhm) provide better balance between performance and drive circuit requirements.

Q: Are there any differences in maximum gate voltage (Vgs Max) between the parts?

A: Yes. The main part IRLZ24NPBF has Vgs Max of ±16V. Substitutes vary: IRFB3806PBF (±20V), IRLZ24PBF (±10V), PHP191NQ06LT,127 (±15V), and STP36NF06L (±18V). The IRLZ24PBF has the lowest maximum gate voltage, which may be a limiting factor in circuits with high gate drive voltages.