IRLZ24LPBF N-Channel MOSFET 60V 17A Equivalent & Substitute Parts

Part Overview

The IRLZ24LPBF is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage with 17A continuous drain current at 25°C. The device is packaged in a TO-262-3 (I2PAK) through-hole configuration and is designed for high-current switching applications requiring efficient thermal management. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-state resistance characteristics, gate charge, and thermal performance specifications. Substitutes must maintain compatible through-hole mounting configurations and operating temperature ranges to ensure direct functional replacement in existing circuit designs.

Substiute Parts

IRLZ24LPBF

Vishay SiliconixIn Stock: 1399IRLZ24LPBF Datasheet

Current PartRFQ

FQP13N06L

Fairchild SemiconductorIn Stock: 22524FQP13N06L Datasheet

MFR RecommendedRFQ

STP16NF06

STMicroelectronicsIn Stock: 37115STP16NF06 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRLZ24LPBF are qualified based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Drain to Source Voltage (Vdss) rating of 60V or greater to ensure safe operation across the full voltage range of the original design.

Current Capability: Substitute parts must provide continuous drain current (Id) at 25°C equal to or exceeding 17A to support the same load requirements without thermal derating.

On-State Resistance (Rds On): The on-state resistance must not exceed the original specification to maintain equivalent power dissipation and thermal performance characteristics.

Gate Charge (Qg): Gate charge values determine switching speed and driver circuit requirements. Substitutes with lower gate charge reduce driver stress; higher values require verification of driver capability.

Thermal Performance: Power dissipation ratings at case temperature (Tc) must support the thermal requirements of the application.

Mounting Configuration: All substitutes must be through-hole devices to ensure mechanical compatibility with existing printed circuit board layouts.

Operating Temperature Range: The -55°C to 175°C operating range must be maintained or exceeded.

Regulatory Compliance: RoHS3 compliance and MSL ratings ensure environmental and manufacturing process compatibility.

Parameter Comparison

Engineering Selection Recommendations

IRLZ24LPBF (Primary Part - Vishay Siliconix)

The IRLZ24LPBF remains the primary selection when the TO-262-3 (I2PAK) package footprint is required. This part offers the highest continuous drain current rating (17A) among the three devices and the lowest gate charge at 5V drive voltage (18 nC), resulting in optimal switching performance with standard 5V gate drivers. The part is RoHS3 compliant with unlimited moisture sensitivity level, supporting high-volume manufacturing environments. Current inventory of 1,300 pieces supports immediate procurement.

STP16NF06 (STMicroelectronics) - Preferred Substitute

The STP16NF06 is the recommended substitute when package compatibility allows transition to TO-220-3 configuration. This device provides 16A continuous drain current, matching 94% of the IRLZ24LPBF rating, with identical on-state resistance (100 mOhm @ 8A, 10V). The STripFET™ II series technology delivers lower input capacitance (315 pF) compared to the original part, reducing gate driver stress. RoHS3 compliance and unlimited MSL rating ensure manufacturing process compatibility. Inventory availability of 37,100 pieces supports high-volume applications. The TO-220-3 package provides superior thermal dissipation through larger lead geometry and wider PCB trace routing options.

FQP13N06L (Fairchild Semiconductor) - Alternative Substitute

The FQP13N06L provides 13.6A continuous drain current, representing 80% of the IRLZ24LPBF rating, and is suitable for applications with reduced current requirements. The QFET® series technology delivers the lowest gate charge (6.4 nC @ 5V) among all three devices, enabling fastest switching transitions with minimal gate driver power consumption. Input capacitance of 350 pF is the lowest of the three parts. The TO-220-3 package offers thermal and routing advantages identical to the STP16NF06. Inventory of 22,488 pieces supports immediate procurement. This part is selected when current derating is acceptable and minimum gate charge is a design priority.

All three devices maintain the -55°C to 175°C operating temperature range and 60V voltage rating required for direct functional replacement. Selection between substitutes depends on package footprint constraints, current margin requirements, and gate driver specifications.

Frequently Asked Questions (FAQ)

Q: Can the FQP13N06L replace the IRLZ24LPBF in all applications?

A: The FQP13N06L provides 13.6A continuous drain current versus the IRLZ24LPBF's 17A rating. Substitution is valid only when the application current requirement does not exceed 13.6A. The 20% current reduction must be evaluated against thermal margin and load specifications. Both devices maintain identical 60V voltage rating and -55°C to 175°C operating temperature range.

Q: What are the package differences between TO-262-3 and TO-220-3?

A: The TO-262-3 (I2PAK) package used by the IRLZ24LPBF features three leads with long through-hole pins optimized for high-current applications. The TO-220-3 package used by both substitute parts features a different lead geometry and larger tab area for heatsink mounting. PCB layout modifications are required when transitioning between these packages. Both are through-hole configurations suitable for manual or automated assembly.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRLZ24LPBF requires 18 nC @ 5V, while the STP16NF06 requires 13 nC @ 10V and the FQP13N06L requires 6.4 nC @ 5V. Lower gate charge reduces gate driver power dissipation and enables faster switching transitions. Gate driver circuits must supply sufficient current to charge the gate within the required switching time. Substitutes with lower gate charge reduce driver stress but may require circuit verification.

Q: Are all three parts RoHS3 compliant?

A: The IRLZ24LPBF and STP16NF06 are explicitly RoHS3 compliant. The FQP13N06L RoHS status is not specified in the provided data. Compliance verification with the component supplier is required before selection for applications with RoHS3 mandates.

Q: What is the significance of Vgs(th) threshold voltage differences?

A: The gate-source threshold voltage (Vgs(th)) determines the minimum gate voltage required to initiate conduction. The IRLZ24LPBF specifies 2V @ 250µA, the FQP13N06L specifies 2.5V @ 250µA, and the STP16NF06 specifies 4V @ 250µA. Lower threshold voltages enable operation with lower gate drive voltages. The STP16NF06's higher threshold voltage (4V) requires verification that the gate driver circuit provides sufficient voltage margin above this level.

Q: Can input capacitance differences affect switching performance?

A: Input capacitance (Ciss) affects the gate charge requirements and switching speed. The IRLZ24LPBF has 870 pF @ 25V, while the STP16NF06 has 315 pF and the FQP13N06L has 350 pF. Lower input capacitance reduces the energy required for switching transitions and enables faster switching speeds with the same gate driver. Substitutes with lower capacitance may improve efficiency in high-frequency switching applications.

Q: What thermal considerations apply when selecting between these parts?

A: The IRLZ24LPBF is rated for 60W power dissipation at case temperature (Tc), while both substitute parts are rated for 45W (Tc). The TO-262-3 package provides different thermal characteristics than the TO-220-3 package. Thermal performance depends on heatsink design, PCB copper area, and airflow conditions. Applications requiring maximum power dissipation should retain the IRLZ24LPBF or verify that 45W dissipation is acceptable with the substitute parts.

Q: Is the ±10V gate voltage limit of the IRLZ24LPBF a constraint for substitution?

A: The IRLZ24LPBF specifies ±10V maximum gate voltage, while both substitute parts allow ±20V. The IRLZ24LPBF's lower gate voltage rating does not prevent substitution by parts with higher ratings. However, if the circuit applies gate voltages exceeding ±10V, the IRLZ24LPBF cannot be used as a reverse substitute for the higher-rated parts.