IRLS640A N-Channel 200V 9.8A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLS640A is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by onsemi, rated for 200V drain-to-source voltage with 9.8A continuous drain current at 25°C. The device is packaged in a TO-220F-3 through-hole configuration with a maximum power dissipation of 40W. The IRLS640A is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Substiute Parts

IRLS640A

onsemiIn Stock: 2385IRLS640A Datasheet

Current PartRFQ

FQP19N20-T

onsemiIn Stock: 717FQP19N20-T Datasheet

MFR RecommendedRFQ

IRFI640GPBF

Vishay SiliconixIn Stock: 15278IRFI640GPBF Datasheet

SimilarRFQ

IRLI640GPBF

Vishay SiliconixIn Stock: 3006IRLI640GPBF Datasheet

SimilarRFQ

RCX160N20

Rohm SemiconductorIn Stock: 4362RCX160N20 Datasheet

SimilarRFQ

STF19NF20

STMicroelectronicsIn Stock: 1269STF19NF20 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRLS640A is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
• Continuous Drain Current (Id): Must equal or exceed 9.8A at 25°C
• On-State Drain Resistance (Rds On): Must not exceed 180mOhm at rated conditions
• Gate-Source Threshold Voltage (Vgs(th)): Must be compatible with 5V drive voltage
• Maximum Gate-Source Voltage (Vgs): Must accommodate ±20V or greater
• Mounting Type: Through Hole
• Package Type: TO-220 series (TO-220-3, TO-220F-3, TO-220FM, TO-220FP)
• Operating Temperature Range: Must span -55°C to 150°C

Substitute Classification:

Direct Equivalents satisfy all primary criteria with identical or superior electrical performance and identical package configuration.

Functional Substitutes meet all primary electrical criteria and operate within the same temperature range but may have different package variants or enhanced performance characteristics.

Parameter Comparison

Engineering Selection Recommendations

FQP19N20-T (onsemi)

The FQP19N20-T is an active product from the original manufacturer onsemi, rated for 200V with 19.4A continuous drain current. This device exceeds the current rating of the IRLS640A and provides enhanced power dissipation capability (140W versus 40W). The FQP19N20-T is suitable for applications requiring higher current capacity or thermal margin. All regulatory certifications (ROHS3, EAR99) are maintained. This part is classified as a manufacturer-recommended substitute.

IRFI640GPBF (Vishay Siliconix)

The IRFI640GPBF is an active product with electrical specifications matching the IRLS640A: 200V, 9.8A continuous drain current, 180mOhm on-state resistance, and 40W power dissipation. The device operates across the same temperature range (-55°C to 150°C). Package configuration is TO-220-3 with isolated tab. ROHS3 compliance is maintained. This part provides direct functional equivalence with active product status.

IRLI640GPBF (Vishay Siliconix)

The IRLI640GPBF is an active product with 200V rating and 9.9A continuous drain current, closely matching the IRLS640A specification. On-state resistance is 180mOhm at 5.9A and 5V gate-source voltage. Power dissipation is 40W. Operating temperature range spans -55°C to 150°C. Package is TO-220-3 with isolated tab. ROHS3 compliance is confirmed. This part provides direct functional equivalence.

RCX160N20 (Rohm Semiconductor)

The RCX160N20 is an active product rated for 200V with 16A continuous drain current, exceeding the IRLS640A specification. On-state resistance is 180mOhm at 8A and 10V gate-source voltage. Power dissipation is 40W. Package is TO-220FM (through-hole, full pack). ROHS3 compliance is maintained. This part provides enhanced current capacity within the same voltage and power dissipation class.

STF19NF20 (STMicroelectronics)

The STF19NF20 is an active product rated for 200V with 15A continuous drain current. On-state resistance is 160mOhm at 7.5A and 10V gate-source voltage, providing lower on-state losses than the IRLS640A. Power dissipation is 25W. Operating temperature range is -55°C to 150°C. Package is TO-220FP (through-hole, full pack). ROHS3 compliance is confirmed. This part provides functional substitution with improved on-state resistance characteristics.

Frequently Asked Questions (FAQ)

Q: Can the FQP19N20-T replace the IRLS640A in all applications?

A: The FQP19N20-T meets all electrical requirements for the IRLS640A with enhanced current and power ratings. However, the higher current rating (19.4A versus 9.8A) and power dissipation (140W versus 40W) indicate this device is designed for higher-power applications. Verification of circuit design and thermal management is necessary to confirm suitability for specific applications.

Q: What is the difference between IRFI640GPBF and IRLI640GPBF?

A: Both devices are manufactured by Vishay Siliconix and provide direct functional equivalence to the IRLS640A with 200V rating, approximately 9.8A continuous drain current, and 40W power dissipation. The IRFI640GPBF has a gate-source threshold voltage of 4V at 250µA, while the IRLI640GPBF has a threshold voltage of 2V at 250µA. The IRLI640GPBF has a lower maximum gate-source voltage rating (±10V versus ±20V). Selection depends on gate drive voltage compatibility in the target application.

Q: Are all substitute parts available in the same package as the IRLS640A?

A: The IRLS640A is packaged in TO-220F-3. Substitute parts are available in TO-220-3, TO-220FM, and TO-220FP variants. All are through-hole TO-220 series packages with three leads. Physical dimensions and pin configurations are compatible for standard through-hole PCB mounting. Verification of specific package variant requirements is recommended for applications with space constraints or thermal interface specifications.

Q: Which substitute part has the lowest on-state resistance?

A: The STF19NF20 has an on-state resistance of 160mOhm at 7.5A and 10V gate-source voltage, which is lower than the IRLS640A specification of 180mOhm at 4.9A and 5V. Lower on-state resistance reduces power dissipation in switching applications. The RCX160N20 and FQP19N20-T also maintain 180mOhm and 150mOhm specifications respectively, providing comparable or superior performance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (FQP19N20-T, IRFI640GPBF, IRLI640GPBF, RCX160N20, and STF19NF20) are confirmed RoHS3 compliant. The IRLS640A is also RoHS3 compliant. All parts carry EAR99 export classification and HTSUS code 8541.29.0095.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. The IRLS640A requires 56nC at 5V. Substitute parts range from 24nC to 70nC depending on drive voltage. Lower gate charge reduces switching losses and allows faster switching speeds. Selection depends on gate driver capability and switching frequency requirements in the target application.

Q: Can substitute parts with higher current ratings be used in lower-current applications?

A: Yes. Devices with higher current ratings (FQP19N20-T at 19.4A, RCX160N20 at 16A, STF19NF20 at 15A) can be used in applications designed for 9.8A operation. The device will operate within its safe operating area. However, thermal management and circuit design verification are necessary to ensure proper operation and reliability.

Q: What is the difference between TO-220F and TO-220FM packages?

A: Both are through-hole TO-220 series packages with three leads. The TO-220F designation indicates a full-pack variant, while TO-220FM indicates a full-pack variant with specific mechanical specifications. All substitute parts maintain TO-220 series compatibility for standard through-hole PCB applications. Specific package variant selection depends on thermal interface requirements and PCB layout constraints.