IRLS510A N-Channel MOSFET 100V 4.5A TO-220F Equivalent & Substitute Parts

Part Overview

The IRLS510A is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by onsemi, rated for 100V drain-to-source voltage and 4.5A continuous drain current in a through-hole TO-220F-3 package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The IRLS510A serves applications requiring moderate voltage and current switching capabilities with through-hole mounting configuration.

Substiute Parts

IRLS510A
onsemiIn Stock: 15392IRLS510A Datasheet
IRLS510A
Current Part
IRFI510GPBF
Vishay SiliconixIn Stock: 15459IRFI510GPBF Datasheet
IRFI510GPBF
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 4.5 A
Drive Voltage (Max Rds On) 5 V
Rds On (Max) @ Id, Vgs 440 mOhm @ 2.25A, 5V
Gate Threshold Voltage Vgs(th) (Max) @ Id 2 V @ 250µA
Power Dissipation (Max) 23 W
Operating Temperature Range -55 to 175 °C
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitution of the IRLS510A is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • Drain-to-source voltage rating (Vdss) must equal 100V
  • Continuous drain current (Id) must equal or exceed 4.5A at 25°C
  • FET technology must be N-Channel metal oxide semiconductor
  • Gate threshold voltage (Vgs(th)) must be compatible with 5V drive logic
  • Operating temperature range must span -55°C to 175°C

Mechanical Equivalence Criteria:

  • Mounting type must be through-hole
  • Package must be TO-220 series with three leads
  • Pin configuration must support direct PCB footprint compatibility

The IRFI510GPBF manufactured by Vishay Siliconix meets all electrical and mechanical substitution criteria. Both devices share identical Vdss (100V) and Id (4.5A) ratings, operate across the same temperature range, and utilize compatible TO-220-3 through-hole packages. The IRFI510GPBF is classified as active product status, providing ongoing availability and supply chain continuity.

Parameter Comparison

Parameter IRLS510A (onsemi) IRFI510GPBF (Vishay Siliconix) Unit
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 100 V
Continuous Drain Current (Id) @ 25°C 4.5 4.5 A
Drive Voltage (Max Rds On) 5 10 V
Rds On (Max) @ Id, Vgs 440 mOhm @ 2.25A, 5V 540 mOhm @ 2.7A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id 2 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 8.3 nC @ 5V / 10V
Input Capacitance (Ciss) (Max) @ Vds 235 180 pF @ 25V
Power Dissipation (Max) 23 27 W
Operating Temperature Range -55 to 175 -55 to 175 °C
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab
Vgs (Max) ±20 ±20 V
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

Product Status Consideration: The IRLS510A is classified as obsolete. The IRFI510GPBF is classified as active product status, ensuring continued manufacturing, availability, and technical support from Vishay Siliconix. Selection of the IRFI510GPBF provides supply chain security and long-term design viability.

Compliance and Certification: Both devices carry identical regulatory classifications: REACH Unaffected, EAR99 ECCN designation, and HTSUS code 8541.29.0095. The IRFI510GPBF additionally carries RoHS3 compliance certification, meeting current environmental and hazardous substance restrictions. Both devices maintain MSL Level 1 (Unlimited) moisture sensitivity rating, indicating no special moisture control requirements during storage or handling.

Electrical Performance: The IRFI510GPBF operates at a higher drive voltage (10V versus 5V) and exhibits slightly higher on-resistance (540 mOhm versus 440 mOhm) and gate threshold voltage (4V versus 2V). These differences remain within acceptable substitution parameters for applications where the IRLS510A was originally specified. The IRFI510GPBF provides higher power dissipation capability (27W versus 23W), offering improved thermal margin in switching applications.

Package Compatibility: Both devices utilize through-hole TO-220-3 packages with identical pin configurations and PCB footprint compatibility. The IRFI510GPBF features an isolated tab option, providing additional design flexibility for thermal management in applications requiring isolated mounting.

Frequently Asked Questions (FAQ)

Q: Can the IRFI510GPBF directly replace the IRLS510A in existing PCB designs?

A: Yes. Both devices share identical Vdss (100V), Id (4.5A), operating temperature range (-55°C to 175°C), and TO-220-3 through-hole package configuration. PCB footprints are mechanically compatible without modification.

Q: What is the significance of the different drive voltages (5V for IRLS510A versus 10V for IRFI510GPBF)?

A: The drive voltage specification indicates the gate-source voltage at which on-resistance characteristics are measured. The IRFI510GPBF requires higher gate voltage (10V) to achieve its specified on-resistance rating. Applications using 5V gate drive logic must account for the IRFI510GPBF's higher gate threshold voltage (4V) and verify adequate gate drive margin for reliable switching.

Q: Are there thermal management differences between these devices?

A: The IRFI510GPBF provides higher maximum power dissipation (27W versus 23W), offering improved thermal performance. Both devices operate across the same temperature range (-55°C to 175°C). The IRFI510GPBF's isolated tab option provides additional flexibility for thermal management in applications requiring isolated mounting configurations.

Q: What is the impact of the higher on-resistance in the IRFI510GPBF?

A: The IRFI510GPBF exhibits 540 mOhm on-resistance (measured at 2.7A, 10V gate drive) compared to 440 mOhm for the IRLS510A (measured at 2.25A, 5V gate drive). This difference results in slightly higher conduction losses. Applications with strict power dissipation budgets must verify thermal performance under actual operating conditions.

Q: Is the IRFI510GPBF suitable for 5V gate drive applications?

A: The IRFI510GPBF has a gate threshold voltage of 4V at 250µA. While 5V gate drive exceeds the threshold voltage, the device will not achieve its full specified on-resistance rating at 5V. Applications requiring optimized performance at 5V gate drive should verify switching characteristics and conduction losses under actual operating conditions.

Q: What compliance advantages does the IRFI510GPBF provide?

A: The IRFI510GPBF carries RoHS3 compliance certification in addition to REACH Unaffected and EAR99 ECCN status shared with the IRLS510A. RoHS3 compliance ensures compliance with current hazardous substance restrictions in electronics manufacturing and end-use applications.

Q: Are there packaging or moisture sensitivity differences?

A: Both devices carry MSL Level 1 (Unlimited) moisture sensitivity rating, indicating no special moisture control requirements. The IRFI510GPBF is supplied in tube packaging, while the IRLS510A packaging format is not specified. Both devices are suitable for standard storage and handling conditions without desiccant requirements.

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