IRLS4030-7PPBF N-Channel MOSFET 100V 190A Equivalent & Substitute Parts

Part Overview

The IRLS4030-7PPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 190A continuous drain current at 25°C. This device is packaged in a D2PAK (TO-263-7) surface mount configuration and is part of the HEXFET® series. The part is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRLS4030-7PPBF

Infineon TechnologiesIn Stock: 1299IRLS4030-7PPBF Datasheet

Current PartRFQ

IPB039N10N3GATMA1

Infineon TechnologiesIn Stock: 150500IPB039N10N3GATMA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRLS4030-7PPBF is determined by the following critical electrical and mechanical parameters:

Voltage Rating: Both the main part and substitute must maintain a Drain-to-Source Voltage (Vdss) of 100V to ensure compatibility in the same circuit topology.

Current Capability: The continuous drain current (Id) at 25°C must be equal to or greater than the original specification. The IRLS4030-7PPBF specifies 190A; substitute parts must support this current level or higher.

On-State Resistance (Rds On): The maximum on-state resistance at specified gate voltage and drain current determines switching losses and thermal performance. Equivalent or lower Rds On values maintain or improve circuit efficiency.

Package Configuration: The D2PAK (TO-263-7) surface mount package with 7 leads is the mechanical requirement. Substitute parts must use the identical package footprint for PCB compatibility.

Operating Temperature Range: The -55°C to 175°C junction temperature range must be maintained to ensure reliability across the intended application environment.

Gate Charge and Threshold Voltage: These parameters affect gate drive requirements and switching speed. Substitutes with comparable or lower gate charge reduce driver stress.

The IPB039N10N3GATMA1 meets these substitution criteria with matching voltage rating, compatible current capability, equivalent Rds On performance, identical package type, and matching temperature range.

Parameter Comparison

Engineering Selection Recommendations

The IPB039N10N3GATMA1 is the qualified substitute for the discontinued IRLS4030-7PPBF based on the following engineering criteria:

Electrical Compatibility: Both devices share identical Drain-to-Source Voltage (100V) and equivalent On-State Resistance (3.9 mOhm @ 10V). The substitute's continuous drain current of 160A is lower than the original 190A specification; this difference must be evaluated against actual circuit current requirements. If the application requires the full 190A capability, the substitute may not be suitable.

Thermal Performance: The substitute exhibits lower maximum power dissipation (214W vs. 370W), which reflects its lower current rating. Thermal design calculations must account for this reduction in power handling capacity.

Gate Drive Characteristics: The substitute features lower gate charge (117 nC vs. 140 nC) and higher maximum gate voltage (±20V vs. ±16V), providing improved gate drive efficiency and greater margin for driver circuit design.

Compliance and Availability: Both parts maintain ROHS3 compliance, MSL Level 1 (unlimited moisture sensitivity), and REACH unaffected status. The substitute is currently active in production with high inventory availability (150,400 pcs), ensuring long-term procurement stability compared to the discontinued original part.

Package Compatibility: Both devices use the D2PAK (TO-263-7) surface mount package, ensuring identical PCB footprint and thermal interface characteristics.

Frequently Asked Questions (FAQ)

Q: Can the IPB039N10N3GATMA1 directly replace the IRLS4030-7PPBF in all applications?

A: Direct substitution is valid only if the application's maximum continuous drain current requirement does not exceed 160A. The substitute is rated for 160A continuous drain current compared to the original 190A. Circuit analysis must confirm that peak and sustained current demands remain within the substitute's rating.

Q: What are the differences in gate drive requirements between these two parts?

A: The IPB039N10N3GATMA1 has lower gate charge (117 nC vs. 140 nC) and accepts higher maximum gate voltage (±20V vs. ±16V). Existing gate drive circuits designed for the IRLS4030-7PPBF will operate the substitute with improved efficiency and reduced driver stress. No gate drive circuit modifications are required.

Q: Are there thermal design considerations when substituting these parts?

A: Yes. The substitute has a lower maximum power dissipation rating (214W vs. 370W). Thermal management calculations must be recalculated based on the actual current and switching frequency in the application. If the original design operated near the 370W limit, the substitute may require enhanced thermal management or current derating.

Q: Do both parts have identical package footprints?

A: Both parts use the D2PAK (TO-263-7) surface mount package. The IRLS4030-7PPBF uses package designation TO-263-7, D2PAK (6 Leads + Tab), while the IPB039N10N3GATMA1 uses PG-TO263-7. These designations refer to the same physical package, ensuring PCB footprint compatibility without layout modifications.

Q: What is the availability status of each part?

A: The IRLS4030-7PPBF is discontinued at DiGi Electronics with 1,274 pcs remaining in stock. The IPB039N10N3GATMA1 is active in production with 150,400 pcs available, providing reliable long-term procurement for new designs and production runs.

Q: Are there compliance or regulatory differences between these parts?

A: Both parts are ROHS3 compliant, MSL Level 1 (unlimited), and REACH unaffected. No compliance or regulatory differences exist. Both parts meet the same environmental and safety standards.

Q: How do the input capacitance values affect circuit performance?

A: The substitute has lower input capacitance (8,410 pF vs. 11,490 pF @ 50V). Lower input capacitance reduces gate charge requirements and improves switching speed, resulting in lower gate drive power dissipation and potentially improved overall circuit efficiency.