IRLS3813TRLPBF N-Channel MOSFET 30V 160A Equivalent & Substitute Parts

Part Overview

The IRLS3813TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications with a 30V drain-to-source voltage rating and 160A continuous drain current capability. This device is part of the HEXFET® series and is housed in a TO-263AB (D2PAK) surface mount package.

The IRLS3813TRLPBF is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or maintenance of systems utilizing this component.

Substiute Parts

IRLS3813TRLPBF
Infineon TechnologiesIn Stock: 24450IRLS3813TRLPBF Datasheet
IRLS3813TRLPBF
Current Part
IPB80N03S4L02ATMA1
Infineon TechnologiesIn Stock: 813IPB80N03S4L02ATMA1 Datasheet
IPB80N03S4L02ATMA1
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 160 A
On-State Resistance (Rds On) @ 148A, 10V 1.95 mOhm
Gate Threshold Voltage (Vgs(th)) @ 150µA 2.35 V
Gate Charge (Qg) @ 4.5V 83 nC
Power Dissipation (Max) 195 W
Operating Temperature Range -55 to 150 °C
Package Type TO-263-3 (D2PAK)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRLS3813TRLPBF is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the same or higher Drain-to-Source Voltage (Vdss) rating of 30V to ensure safe operation in the original circuit.

Package Compatibility: The substitute must use the same TO-263-3 (D2PAK) surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts and thermal management solutions.

Current Handling: While the IRLS3813TRLPBF is rated for 160A continuous drain current, substitute parts may have lower current ratings if the application circuit design permits. The substitute must be evaluated for thermal performance and power dissipation requirements in the specific application.

On-State Resistance (Rds On): The substitute part's Rds On value affects conduction losses and heat generation. Lower Rds On values indicate improved efficiency; however, the substitute must be compatible with the gate drive voltage and circuit topology.

Gate Drive Voltage: The substitute must be compatible with the available gate drive voltage in the circuit. The IRLS3813TRLPBF operates with a maximum gate voltage of ±20V.

Thermal Performance: The substitute must support the operating temperature range and power dissipation requirements of the application.

Parameter Comparison

Parameter IRLS3813TRLPBF (Main Part) IPB80N03S4L02ATMA1 (Substitute) Unit
Manufacturer Infineon Technologies Infineon Technologies
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 30 V
Continuous Drain Current (Id) @ 25°C 160 80 A
On-State Resistance (Rds On) @ 10V 1.95 @ 148A 2.4 @ 80A mOhm
Gate Threshold Voltage (Vgs(th)) 2.35 @ 150µA 2.2 @ 90µA V
Gate Charge (Qg) 83 @ 4.5V 140 @ 10V nC
Maximum Gate Voltage (Vgs) ±20 ±16 V
Input Capacitance (Ciss) @ 25V 8020 9750 pF
Power Dissipation (Max) 195 136 W
Operating Temperature Range -55 to 150 -55 to 175 °C
Package Type TO-263-3 (D2PAK) TO-263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Product Status Consideration: The IRLS3813TRLPBF is classified as obsolete, making the IPB80N03S4L02ATMA1 a necessary alternative for new designs or ongoing production support. The IPB80N03S4L02ATMA1 is an active product from the same manufacturer, ensuring continued availability and technical support.

Compliance and Certification: Both parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. Both devices carry MSL Level 1 (Unlimited) moisture sensitivity ratings, indicating no special moisture handling requirements during storage or assembly.

Electrical Compatibility: Both parts share identical Vdss ratings (30V) and compatible package specifications (TO-263-3 D2PAK). The IPB80N03S4L02ATMA1 operates within a wider temperature range (-55°C to 175°C versus -55°C to 150°C), providing enhanced thermal margin in high-temperature applications.

Current Rating Differential: The IPB80N03S4L02ATMA1 is rated for 80A continuous drain current, compared to the IRLS3813TRLPBF's 160A rating. Substitution is appropriate only for applications where the circuit design operates at or below 80A continuous current. Applications requiring the full 160A capability of the original part require alternative solutions.

Gate Drive Compatibility: The IPB80N03S4L02ATMA1 accepts a maximum gate voltage of ±16V, compared to ±20V for the IRLS3813TRLPBF. Existing gate drive circuits must be verified to operate within the ±16V specification.

Thermal Performance: The IPB80N03S4L02ATMA1 has a maximum power dissipation rating of 136W compared to 195W for the original part. Thermal analysis of the application is required to confirm adequate heat dissipation at the reduced power rating.

Frequently Asked Questions (FAQ)

Q: Can the IPB80N03S4L02ATMA1 directly replace the IRLS3813TRLPBF in all applications?

A: Direct replacement is possible only in applications where the continuous drain current does not exceed 80A. The IPB80N03S4L02ATMA1 is rated for 80A continuous current, while the IRLS3813TRLPBF is rated for 160A. Applications requiring higher current capability require alternative parts or circuit redesign.

Q: Are the package dimensions identical between these two parts?

A: Both parts use the TO-263-3 (D2PAK) surface mount package. Physical dimensions and PCB footprints are compatible, allowing direct PCB layout reuse without modification.

Q: What is the impact of the lower gate charge (Qg) specification on the IRLS3813TRLPBF?

A: The IRLS3813TRLPBF has a gate charge of 83 nC at 4.5V, while the IPB80N03S4L02ATMA1 has 140 nC at 10V. Lower gate charge typically results in faster switching times and reduced gate drive power requirements. Applications with high-frequency switching may benefit from the lower gate charge of the original part; however, the substitute remains suitable for most standard switching applications.

Q: Is the gate voltage specification difference between ±20V and ±16V critical?

A: The IPB80N03S4L02ATMA1 accepts a maximum gate voltage of ±16V, compared to ±20V for the IRLS3813TRLPBF. If the existing gate drive circuit applies voltages exceeding ±16V, the substitute part cannot be used without gate drive circuit modification. Verify the actual gate drive voltage in the application before substitution.

Q: Does the wider operating temperature range of the IPB80N03S4L02ATMA1 provide any advantage?

A: The IPB80N03S4L02ATMA1 operates from -55°C to 175°C, compared to -55°C to 150°C for the IRLS3813TRLPBF. The extended upper temperature limit provides additional thermal margin in high-temperature environments, reducing the risk of thermal shutdown or performance degradation.

Q: What thermal considerations apply when substituting these parts?

A: The IPB80N03S4L02ATMA1 has a maximum power dissipation of 136W compared to 195W for the IRLS3813TRLPBF. Thermal analysis must confirm that the application's heat dissipation capability is adequate for the substitute part's power rating. If the original design relied on the higher power dissipation capability, thermal performance may be compromised.

Q: Are both parts available in the same packaging format?

A: The IRLS3813TRLPBF is supplied in standard packaging, while the IPB80N03S4L02ATMA1 is supplied in Tape & Reel (TR) format. Both use the same TO-263-3 (D2PAK) component package. Tape & Reel packaging is standard for high-volume production and does not affect component functionality or compatibility.

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