IRLS3813PBF N-Channel MOSFET 30V 160A Equivalent & Substitute Parts

Part Overview

The IRLS3813PBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications in surface mount D2PAK packaging. This device features a 30V drain-to-source voltage rating with 160A continuous drain current capability and 195W maximum power dissipation. The product is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRLS3813PBF

Infineon TechnologiesIn Stock: 909IRLS3813PBF Datasheet

Current PartRFQ

STB270N4F3

STMicroelectronicsIn Stock: 7257STB270N4F3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRLS3813PBF is determined by the following critical parameters:

Primary Compatibility Criteria:

• FET Type: N-Channel (required match)
• Package Type: D2PAK / TO-263-3 (required match for mechanical compatibility)
• Continuous Drain Current (Id): Minimum 160A at 25°C (equal or greater)
• Drain to Source Voltage (Vdss): Minimum 30V (equal or greater)
• Mounting Type: Surface Mount (required match)

Secondary Electrical Considerations:

• Rds On (on-resistance): Lower or equal values indicate improved performance
• Power Dissipation: Higher ratings provide thermal margin
• Operating Temperature Range: Must encompass application requirements
• Gate Charge and Input Capacitance: Affect switching speed and drive requirements

The STB270N4F3 meets all primary compatibility criteria with enhanced electrical specifications, making it a valid substitute for the discontinued IRLS3813PBF.

Parameter Comparison

Engineering Selection Recommendations

STB270N4F3 as Primary Substitute:

The STB270N4F3 is the manufacturer-recommended substitute for the discontinued IRLS3813PBF. This device maintains mechanical compatibility through identical D2PAK packaging and meets or exceeds all critical electrical parameters required for direct substitution.

Compliance and Certification Status:

• Both devices are ROHS3 compliant and REACH unaffected, ensuring regulatory alignment
• STB270N4F3 carries AEC-Q101 automotive qualification, providing additional reliability assurance
• Both devices feature MSL 1 (Unlimited) moisture sensitivity rating

Electrical Performance Advantages:

• STB270N4F3 provides 10V higher Vdss rating (40V vs. 30V), offering enhanced voltage margin
• Power dissipation capability increases from 195W to 330W, improving thermal performance
• Operating temperature range extends to 175°C (vs. 150°C), supporting higher ambient conditions
• Active product status ensures long-term availability and supply chain continuity

Design Considerations: The STB270N4F3 exhibits higher gate charge (150 nC vs. 83 nC) and threshold voltage (4.0V vs. 2.35V), which may require gate drive circuit evaluation in applications with marginal drive capability. Input capacitance is slightly lower (7400 pF vs. 8020 pF), resulting in marginally faster switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can the STB270N4F3 be used as a direct replacement for the IRLS3813PBF without PCB modifications?

A: Yes. Both devices use identical D2PAK (TO-263-3) packaging with the same pin configuration and mechanical footprint. No PCB layout changes are required for physical substitution.

Q: What are the key electrical differences between these two MOSFETs?

A: The STB270N4F3 features a higher Vdss rating (40V vs. 30V), greater power dissipation capability (330W vs. 195W), and extended operating temperature range (-55 to 175°C vs. -55 to 150°C). The STB270N4F3 has higher gate charge (150 nC vs. 83 nC) and threshold voltage (4.0V vs. 2.35V), which may affect gate drive requirements.

Q: Are there any gate drive circuit modifications needed when switching from IRLS3813PBF to STB270N4F3?

A: Gate drive circuit evaluation is recommended due to differences in gate charge and threshold voltage. The STB270N4F3 requires higher gate charge (150 nC vs. 83 nC) and has a higher threshold voltage (4.0V vs. 2.35V). Verify that the existing gate driver can supply sufficient current to meet switching speed requirements.

Q: Does the STB270N4F3 provide better thermal performance?

A: Yes. The STB270N4F3 offers significantly higher power dissipation rating (330W vs. 195W) and an extended maximum junction temperature (175°C vs. 150°C), providing improved thermal margin in high-power applications.

Q: Are both devices compliant with current environmental and regulatory standards?

A: Yes. Both the IRLS3813PBF and STB270N4F3 are ROHS3 compliant and REACH unaffected. The STB270N4F3 additionally carries AEC-Q101 automotive qualification.

Q: What is the inventory status of the STB270N4F3?

A: The STB270N4F3 is an active product with 7230 pieces in stock, ensuring reliable availability for new designs and production requirements.

Q: Can the STB270N4F3 be used in applications originally designed for the IRLS3813PBF?

A: Yes, provided that the application does not depend on the specific electrical characteristics of the IRLS3813PBF. The higher Vdss, power dissipation, and temperature ratings of the STB270N4F3 make it suitable for the same application class. Verify gate drive compatibility and thermal design margins for your specific circuit.