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IRLR9343PBF P-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRLR9343PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 20A continuous drain current in a surface mount DPAK package. This device is part of the HEXFET® series and is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | P-Channel | — |
| Drain to Source Voltage (Vdss) | 55 | V |
| Current - Continuous Drain (Id) @ 25°C | 20 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 3.4A, 10V | — |
| Power Dissipation (Max) | 79 | W (Tc) |
| Operating Temperature Range | -40 to 175 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the IRLR9343PBF is determined by the following critical parameters:
Mandatory Compatibility Criteria:
- FET Type: P-Channel topology
- Package / Case: TO-252-3 DPAK (2 Leads + Tab) for PCB footprint compatibility
- Mounting Type: Surface Mount
- Drain to Source Voltage (Vdss): Minimum 55V (substitute parts rated 60V satisfy this requirement)
- Current - Continuous Drain (Id): Minimum 20A at rated temperature
- Operating Temperature Range: Must encompass or exceed -40°C to 175°C
- RoHS Status: ROHS3 Compliant
Electrical Performance Parameters:
- Rds On (Max): Lower or equivalent on-resistance values ensure thermal performance
- Power Dissipation (Max): Sufficient thermal capability for application requirements
- Gate Charge (Qg): Affects switching speed and drive circuit requirements
- Vgs(th) and Vgs (Max): Gate voltage thresholds and maximum ratings
The three substitute parts listed (FQD11P06TM, NTD20P06LT4G, NTD2955T4G) are all P-Channel MOSFETs in DPAK packages with voltage ratings of 60V, exceeding the 55V requirement. However, they differ in continuous drain current ratings and thermal characteristics, requiring application-specific evaluation.
Parameter Comparison
| Parameter | IRLR9343PBF (Main) | FQD11P06TM | NTD20P06LT4G | NTD2955T4G |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | onsemi | onsemi | onsemi |
| FET Type | P-Channel | P-Channel | P-Channel | P-Channel |
| Vdss (V) | 55 | 60 | 60 | 60 |
| Id @ 25°C (A) | 20 (Tc) | 9.4 (Tc) | 15.5 (Ta) | 12 (Ta) |
| Rds On (Max) @ Vgs (mOhm) | 105 @ 10V | 185 @ 10V | 150 @ 5V | 180 @ 10V |
| Power Dissipation (Max) (W) | 79 (Tc) | 38 (Tc) | 65 (Tc) | 55 (Tj) |
| Operating Temperature (°C) | -40 to 175 | -55 to 150 | -55 to 175 | -55 to 175 |
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Product Status | Discontinued | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
FQD11P06TM (onsemi QFET® Series)
This substitute is suitable for applications where continuous drain current requirements do not exceed 9.4A. The 60V Vdss rating provides voltage margin above the 55V specification. However, the maximum continuous drain current of 9.4A is significantly lower than the IRLR9343PBF's 20A rating, limiting its applicability to lower-current designs. The higher Rds On value (185 mOhm) results in increased power dissipation. Product status is Active with full RoHS3 compliance. Operating temperature range extends to -55°C but is limited to 150°C maximum junction temperature.
NTD20P06LT4G (onsemi)
This substitute provides the closest current capability match at 15.5A continuous drain current, though still below the 20A specification of the main part. The 60V Vdss rating exceeds requirements. The Rds On value of 150 mOhm at 5V gate voltage is lower than the main part at 10V, indicating improved on-resistance characteristics. Maximum power dissipation of 65W (Tc) approaches the main part's 79W capability. Operating temperature range of -55°C to 175°C fully encompasses the main part's range. Product status is Active with RoHS3 compliance. This part represents the best current-handling substitute among the three options.
NTD2955T4G (onsemi)
This substitute offers 12A continuous drain current, intermediate between FQD11P06TM and NTD20P06LT4G. The 60V Vdss rating provides voltage margin. Rds On of 180 mOhm at 10V is comparable to the main part's specification. Maximum power dissipation of 55W (Tj) is lower than the main part's 79W, indicating reduced thermal headroom. Operating temperature range of -55°C to 175°C fully encompasses the main part's range. Product status is Active with RoHS3 compliance.
Selection Criteria Summary:
All three substitute parts share identical package specifications (TO-252-3 DPAK), RoHS3 compliance, and active product status. Selection depends on application current requirements: NTD20P06LT4G for maximum current handling, NTD2955T4G for intermediate current with balanced thermal performance, and FQD11P06TM for lower-current applications. None of the substitutes fully match the 20A continuous drain current specification of the IRLR9343PBF.
Frequently Asked Questions (FAQ)
Q: Can FQD11P06TM directly replace IRLR9343PBF in all applications?
A: No. While both are P-Channel MOSFETs in DPAK packages with 60V+ voltage ratings, the FQD11P06TM is rated for only 9.4A continuous drain current compared to the IRLR9343PBF's 20A. Direct substitution is limited to applications requiring less than 9.4A continuous current.
Q: What is the primary limitation of using NTD2955T4G as a substitute?
A: The NTD2955T4G provides 12A continuous drain current, which is below the IRLR9343PBF's 20A specification. Additionally, its maximum power dissipation of 55W is lower than the main part's 79W, potentially limiting thermal performance in high-power applications.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. FQD11P06TM, NTD20P06LT4G, and NTD2955T4G are all RoHS3 compliant, matching the compliance status of the IRLR9343PBF.
Q: Do the substitute parts fit the same PCB footprint as IRLR9343PBF?
A: Yes. All three substitute parts use the TO-252-3 DPAK (2 Leads + Tab) package, which is mechanically and electrically compatible with the IRLR9343PBF's footprint.
Q: Which substitute part has the lowest on-resistance?
A: NTD20P06LT4G has the lowest Rds On value at 150 mOhm when measured at 7.5A and 5V gate voltage, compared to the IRLR9343PBF's 105 mOhm at 3.4A and 10V. Direct comparison requires normalization to identical measurement conditions.
Q: What is the operating temperature difference between the main part and substitutes?
A: The IRLR9343PBF operates from -40°C to 175°C. NTD20P06LT4G and NTD2955T4G extend the lower temperature limit to -55°C. FQD11P06TM is limited to 150°C maximum junction temperature, below the main part's 175°C specification.
Q: Are there any gate voltage rating differences?
A: Yes. The IRLR9343PBF has a maximum gate voltage (Vgs) of ±20V. FQD11P06TM and NTD2955T4G also specify ±20V, while NTD20P06LT4G specifies ±20V. All are compatible with standard gate drive circuits.
Q: Which substitute offers the best overall thermal performance?
A: NTD20P06LT4G provides the highest power dissipation rating at 65W (Tc), closest to the main part's 79W, combined with the highest continuous drain current of 15.5A among the substitutes.
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