IRLR8726PBF N-Channel 30V 86A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR8726PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 86A continuous drain current in a surface mount DPAK package. This device is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and component procurement.

The HEXFET® series device operates across a temperature range of -55°C to 175°C and dissipates up to 75W at the case temperature. With an on-resistance of 5.8mOhm at 25A and 10V gate-source voltage, the IRLR8726PBF serves applications requiring efficient switching and power conversion in compact form factors.

Substiute Parts

IRLR8726PBF

Infineon TechnologiesIn Stock: 35186IRLR8726PBF Datasheet

Current PartRFQ

STD100N3LF3

STMicroelectronicsIn Stock: 15489STD100N3LF3 Datasheet

MFR RecommendedRFQ

STD150N3LLH6

STMicroelectronicsIn Stock: 10334STD150N3LLH6 Datasheet

MFR RecommendedRFQ

STD95N4LF3

STMicroelectronicsIn Stock: 5262STD95N4LF3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRLR8726PBF is determined by the following critical parameters:

Voltage Rating (Vdss): The substitute must support minimum 30V drain-to-source voltage. Devices rated at 40V or higher are acceptable as they provide voltage margin.

Current Rating (Id): The substitute must support minimum 86A continuous drain current at 25°C. Devices rated at 80A or higher meet this requirement within acceptable thermal margins.

Package Type: All substitutes must use the TO-252-3 DPAK surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts.

On-Resistance (Rds On): The substitute on-resistance should not significantly exceed the original specification to maintain switching efficiency and thermal performance.

Gate Voltage Compatibility (Vgs): The substitute must accept the same gate drive voltage range (±20V or compatible).

Temperature Range: The substitute must support the full operating temperature range of -55°C to 175°C.

Compliance: All substitutes must maintain ROHS3 compliance and equivalent regulatory certifications.

Parameter Comparison

Engineering Selection Recommendations

STD100N3LF3 (STMicroelectronics): This substitute meets the 30V voltage rating and 80A current specification, providing functional equivalence with comparable on-resistance of 5.5mOhm. The device is rated for 110W power dissipation, exceeding the original 75W specification. However, this part is obsolete, limiting long-term procurement viability.

STD150N3LLH6 (STMicroelectronics): This substitute also meets the 30V voltage and 80A current requirements with superior on-resistance of 2.8mOhm, resulting in lower conduction losses. The 110W power dissipation rating provides thermal margin. The higher input capacitance (3700pF) may affect gate drive circuit design. This part is obsolete.

STD95N4LF3 (STMicroelectronics): This substitute provides a 40V voltage rating, exceeding the 30V requirement and offering voltage margin for transient protection. The 80A current rating and 6.0mOhm on-resistance are compatible with the original specification. Notably, this device maintains active product status, ensuring ongoing availability and supply chain stability. The higher gate charge (70nC) requires consideration in gate drive circuit design. This part is ROHS3 compliant and maintains full temperature range support.

All three substitutes are housed in the TO-252-3 DPAK package, ensuring mechanical and thermal compatibility with existing PCB layouts. All maintain ROHS3 compliance and equivalent regulatory certifications.

Frequently Asked Questions (FAQ)

Q: Can STD100N3LF3 directly replace IRLR8726PBF in all applications?

A: STD100N3LF3 meets the core electrical specifications (30V, 80A) and uses the same DPAK package. However, the part is obsolete, which may impact future procurement. The on-resistance of 5.5mOhm is comparable to the original 5.8mOhm, maintaining similar thermal performance.

Q: What is the significance of the voltage rating difference between STD95N4LF3 (40V) and the original IRLR8726PBF (30V)?

A: The 40V rating on STD95N4LF3 provides additional voltage margin and transient protection without compromising performance in 30V applications. This is a beneficial characteristic for reliability. The higher gate charge (70nC versus 23nC) requires gate driver circuit evaluation to ensure adequate drive capability.

Q: Why does STD150N3LLH6 have significantly lower on-resistance (2.8mOhm) compared to IRLR8726PBF (5.8mOhm)?

A: The lower on-resistance reflects advanced semiconductor process technology in the STripFET™ VI series. This results in reduced conduction losses and lower junction temperatures during operation. However, the higher input capacitance (3700pF) may require gate drive circuit optimization.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. STD100N3LF3, STD150N3LLH6, and STD95N4LF3 are all ROHS3 compliant with REACH unaffected status, matching the regulatory compliance of the original IRLR8726PBF.

Q: Which substitute offers the best long-term procurement stability?

A: STD95N4LF3 maintains active product status, ensuring ongoing manufacturing and supply availability. STD100N3LF3 and STD150N3LLH6 are obsolete, which may result in limited stock and higher costs over time.

Q: Can the DPAK package be used interchangeably across all four devices?

A: Yes. All devices use the TO-252-3 DPAK (2 Leads + Tab) surface mount package, designated as SC-63. PCB footprints and thermal pad designs are compatible across all four parts.

Q: What gate drive voltage should be used with STD95N4LF3?

A: STD95N4LF3 accepts a maximum gate-source voltage of ±16V, compared to ±20V for the original IRLR8726PBF. Gate drive circuits must be designed to operate within this lower voltage range. The higher gate charge (70nC) requires adequate drive current capability.