IRLR8259TRPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR8259TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 25V drain-to-source voltage with 57A continuous drain current at 25°C (Tc). This device is packaged in TO-252AA (DPAK) surface mount configuration and belongs to the HEXFET® series. The part is classified as "Not For New Designs," indicating that alternative components should be evaluated for new circuit implementations. Identifying equivalent and substitute parts is necessary to ensure design flexibility, manage supply chain continuity, and support legacy system maintenance.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	25	V
Continuous Drain Current (Id) @ 25°C	57	A (Tc)
On-Resistance (Rds On Max) @ 21A, 10V	8.7	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 25µA	2.35	V
Power Dissipation (Max)	48	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252AA (DPAK)	Surface Mount
Gate Charge (Qg Max) @ 4.5V	10	nC
Input Capacitance (Ciss Max) @ 13V	900	pF

Substitute Part Grouping Explanation

Substitution of the IRLR8259TRPBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Package type: TO-252AA (DPAK) surface mount configuration
FET type: N-Channel MOSFET technology
Operating temperature range: -55°C to 175°C (TJ)
Gate voltage rating: ±20V maximum
RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity

Functional Substitution Parameters:

Drain-to-source voltage (Vdss) rating must equal or exceed 25V
Continuous drain current (Id) must meet or exceed 57A at Tc
On-resistance (Rds On) characteristics must support equivalent power dissipation performance
Gate threshold voltage (Vgs(th)) must fall within compatible switching characteristics

The substitute parts identified—FDD8880 and STD70NS04ZL—meet these criteria with variations in voltage rating, current capacity, and power dissipation that allow functional equivalence within specified application parameters.

Parameter Comparison

Parameter	IRLR8259TRPBF (Main)	FDD8880 (Substitute)	STD70NS04ZL (Substitute)	Unit
Manufacturer	Infineon Technologies	onsemi	STMicroelectronics	—
Vdss Rating	25	30	33	V
Continuous Drain Current (Id) @ Tc	57	58	70	A
Rds On (Max) @ 10V	8.7 @ 21A	9 @ 35A	10.5 @ 30A	mOhm
Gate Threshold Voltage (Vgs(th) Max)	2.35 @ 25µA	2.5 @ 250µA	3 @ 1mA	V
Power Dissipation (Max)	48	55	110	W (Tc)
Gate Charge (Qg Max)	10 @ 4.5V	31 @ 10V	32 @ 5V	nC
Input Capacitance (Ciss Max)	900 @ 13V	1260 @ 15V	1800 @ 25V	pF
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package	TO-252AA (DPAK)	TO-252AA (DPAK)	TO-252-3 (DPAK)	—
Product Status	Not For New Designs	Active	Active	—
RoHS3 Compliance	Compliant	Compliant	Compliant	—
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

FDD8880 (onsemi PowerTrench®): This substitute provides the closest functional match to the IRLR8259TRPBF. The FDD8880 delivers 58A continuous drain current at Tc, matching the 57A specification of the main part. The 30V Vdss rating exceeds the 25V requirement, providing additional voltage margin. On-resistance of 9mOhm at 35A and 10V is comparable to the main part's 8.7mOhm specification. Power dissipation capability of 55W exceeds the 48W rating. The FDD8880 maintains Active product status, RoHS3 compliance, and MSL 1 rating. This part is suitable for direct substitution in applications where the higher voltage rating does not create design conflicts.

STD70NS04ZL (STMicroelectronics SAFeFET™): This substitute offers enhanced performance specifications with 70A continuous drain current and 110W power dissipation capability. The 33V Vdss rating provides additional voltage headroom. On-resistance of 10.5mOhm at 30A and 10V is slightly higher than the main part but remains within acceptable performance parameters for most applications. The STD70NS04ZL maintains Active product status, RoHS3 compliance, and MSL 1 rating. This part is suitable for applications requiring higher current capacity or thermal performance than the original specification.

Compliance and Certification: Both substitute parts maintain RoHS3 compliance, REACH unaffected status, and MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental and regulatory compliance profile of the IRLR8259TRPBF. All three parts operate across the -55°C to 175°C temperature range and support ±20V gate voltage specifications.

Frequently Asked Questions (FAQ)

Q: Can the FDD8880 be used as a direct replacement for the IRLR8259TRPBF in existing designs?

A: The FDD8880 is functionally compatible with the IRLR8259TRPBF for most applications. Both devices share the TO-252AA (DPAK) package, N-Channel MOSFET technology, and comparable electrical characteristics. The FDD8880's 30V Vdss rating exceeds the 25V requirement, and its 58A continuous drain current matches the 57A specification. Verify that the higher voltage rating does not introduce design conflicts in your specific application circuit.

Q: What are the key differences between the FDD8880 and STD70NS04ZL substitutes?

A: The primary differences are drain current capacity and power dissipation. The FDD8880 provides 58A at Tc with 55W power dissipation, closely matching the original IRLR8259TRPBF specifications. The STD70NS04ZL offers higher performance with 70A at Tc and 110W power dissipation, making it suitable for applications requiring enhanced thermal or current handling capability. Both maintain compatible package, temperature range, and compliance specifications.

Q: Are there package compatibility concerns when substituting these parts?

A: All three parts use TO-252AA (DPAK) surface mount packaging with identical pinout configuration (2 Leads + Tab, SC-63). PCB layout and thermal management considerations remain consistent across substitutions. No package-related modifications to existing designs are required.

Q: How do gate charge differences affect circuit performance?

A: The IRLR8259TRPBF specifies 10nC gate charge at 4.5V, while the FDD8880 specifies 31nC at 10V and the STD70NS04ZL specifies 32nC at 5V. Higher gate charge values require increased gate drive current and switching time. Verify that your gate driver circuit can supply sufficient current to meet the switching frequency and performance requirements of the substitute part.

Q: What is the significance of the "Not For New Designs" status of the IRLR8259TRPBF?

A: This status indicates that Infineon Technologies has discontinued active development and support for this part. For new circuit designs, the FDD8880 or STD70NS04ZL are recommended as they maintain Active product status and receive ongoing manufacturer support. For legacy system maintenance, the IRLR8259TRPBF remains available through existing inventory channels.

Q: Do all three parts meet the same environmental and regulatory requirements?

A: Yes. The IRLR8259TRPBF, FDD8880, and STD70NS04ZL all maintain RoHS3 compliance, REACH unaffected status, and MSL 1 (Unlimited) moisture sensitivity rating. All parts operate across -55°C to 175°C junction temperature range and support ±20V gate voltage specifications, ensuring equivalent environmental and regulatory compliance.

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