IRLR8259PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR8259PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 25V drain-to-source voltage with 57A continuous drain current at 25°C. This device is housed in a TO-252AA (DPAK) surface mount package and is part of the HEXFET® series. The part is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRLR8259PBF

Infineon TechnologiesIn Stock: 25379IRLR8259PBF Datasheet

Current PartRFQ

FDD8880

onsemiIn Stock: 35476FDD8880 Datasheet

MFR RecommendedRFQ

STD150N3LLH6

STMicroelectronicsIn Stock: 10334STD150N3LLH6 Datasheet

MFR RecommendedRFQ

STD70NS04ZL

STMicroelectronicsIn Stock: 1333STD70NS04ZL Datasheet

MFR RecommendedRFQ

SUD50N024-09P-E3

Vishay SiliconixIn Stock: 15450SUD50N024-09P-E3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRLR8259PBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Mounting Type: Surface Mount
• Operating Temperature Range: Minimum -55°C to 175°C (TJ)
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level: 1 (Unlimited)

Electrical Performance Parameters:

• Drain to Source Voltage (Vdss): Equal to or greater than 25V
• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 57A (Tc)
• Rds On (Max): Equal to or lower than 8.7 mOhm @ 21A, 10V
• Power Dissipation (Max): Equal to or greater than 48W (Tc)

The substitute parts listed below meet these criteria within the allowed electrical and mechanical parameters for this product category.

Parameter Comparison

Engineering Selection Recommendations

FDD8880 (onsemi PowerTrench®)

The FDD8880 is an active product with electrical parameters that exceed the IRLR8259PBF specification. It provides 30V Vdss (5V higher), 58A continuous drain current (1A higher), and 55W power dissipation (7W higher). The device maintains ROHS3 compliance and MSL 1 rating. Gate charge is elevated at 31 nC compared to 10 nC, which may affect switching speed in gate-drive-limited applications. This substitute is suitable for direct replacement in applications where higher voltage margin and current capacity are acceptable.

STD150N3LLH6 (STMicroelectronics DeepGATE™ / STripFET™ VI)

The STD150N3LLH6 is marked as obsolete and carries a higher Vdss of 30V with significantly higher continuous drain current of 80A and power dissipation of 110W. The Rds On is substantially lower at 2.8 mOhm, providing superior on-state performance. However, the obsolete status limits long-term procurement viability. This device is suitable only for applications requiring enhanced current handling and thermal performance where obsolescence risk is acceptable.

STD70NS04ZL (STMicroelectronics SAFeFET™)

The STD70NS04ZL is an active product with 33V Vdss, 70A continuous drain current, and 110W power dissipation. The Rds On is 10.5 mOhm at 30A, slightly higher than the main part. Gate charge is 32 nC at 5V drive voltage. This device maintains full ROHS3 compliance and operating temperature range of -55°C to 175°C. Inventory availability is limited at 1310 pieces. This substitute provides higher voltage and current ratings with active product status.

SUD50N024-09P-E3 (Vishay Siliconix TrenchFET®)

The SUD50N024-09P-E3 is an active product with lower Vdss of 22V and reduced continuous drain current of 49A compared to the main part. Power dissipation is 39.5W (Tc), below the IRLR8259PBF specification. This device is suitable only for applications with lower voltage and current requirements. The lower Vdss rating makes this a downgrade substitute rather than a direct equivalent.

Recommended Selection Priority:

1. FDD8880 for applications requiring active product status with enhanced electrical performance
2. STD70NS04ZL for applications requiring higher current capacity with active product status
3. STD150N3LLH6 only when maximum current and thermal performance are critical and obsolescence risk is acceptable
4. SUD50N024-09P-E3 only for applications with reduced voltage and current requirements

Frequently Asked Questions (FAQ)

Q: Can the FDD8880 be used as a direct replacement for the IRLR8259PBF?

A: The FDD8880 is electrically compatible as a substitute. Both devices are N-Channel MOSFETs in TO-252AA (DPAK) packages with identical mounting and compliance ratings. The FDD8880 provides higher voltage (30V vs. 25V), higher current (58A vs. 57A), and higher power dissipation (55W vs. 48W). Gate charge is higher at 31 nC, which may affect switching characteristics in gate-drive-limited circuits. Verification of gate drive capability is recommended before implementation.

Q: Why is STD150N3LLH6 marked as obsolete?

A: The STD150N3LLH6 is listed with obsolete product status, indicating it is no longer in active production or support by STMicroelectronics. While inventory may be available from distributors, long-term procurement cannot be guaranteed. Use of this device should be limited to applications where alternative substitutes are unsuitable and where obsolescence risk is acceptable.

Q: What is the significance of the Rds On parameter in selecting a substitute?

A: Rds On (on-state resistance) directly affects power dissipation and thermal performance. The IRLR8259PBF specifies 8.7 mOhm maximum at 21A and 10V gate drive. Substitutes with equal or lower Rds On values maintain or improve efficiency. Higher Rds On values increase power loss and heat generation, requiring thermal management verification. The STD150N3LLH6 offers superior Rds On at 2.8 mOhm, while STD70NS04ZL is slightly higher at 10.5 mOhm.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (FDD8880, STD150N3LLH6, STD70NS04ZL, and SUD50N024-09P-E3) are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the main part specification.

Q: What is the impact of gate charge differences on circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRLR8259PBF specifies 10 nC at 4.5V, while substitutes range from 16 nC to 32 nC. Higher gate charge requires more gate drive current or longer switching times. In gate-drive-limited applications, higher gate charge may reduce switching frequency or require gate driver redesign. Verification of gate drive circuit capability is necessary before substitution.

Q: Can SUD50N024-09P-E3 be used in place of IRLR8259PBF?

A: The SUD50N024-09P-E3 is not a suitable direct substitute. It has lower Vdss (22V vs. 25V) and lower continuous drain current (49A vs. 57A), making it unsuitable for applications designed for the IRLR8259PBF specifications. This device is appropriate only for applications with reduced voltage and current requirements.

Q: What is the operating temperature range for all substitute parts?

A: The IRLR8259PBF operates from -55°C to 175°C (TJ). FDD8880, STD70NS04ZL, and SUD50N024-09P-E3 maintain this full range. STD150N3LLH6 specifies operation to 175°C but does not explicitly state the lower limit; verification with the manufacturer datasheet is recommended for applications requiring -55°C operation.

Q: Are there package compatibility concerns with these substitutes?

A: All substitute parts use TO-252-3 (DPAK) packaging with 2 leads plus tab, identical to the IRLR8259PBF. Pin configuration and PCB footprint are compatible. No layout modifications are required for package substitution.