IRLR8256PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR8256PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 25V drain-to-source voltage with 81A continuous drain current at 25°C. This device is housed in a TO-252-3 DPAK surface mount package and is part of the HEXFET® series. The IRLR8256PBF is discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating the same or compatible package footprints.

Substiute Parts

IRLR8256PBF

Infineon TechnologiesIn Stock: 1472IRLR8256PBF Datasheet

Current PartRFQ

IPD50N03S2L06ATMA1

Infineon TechnologiesIn Stock: 15187IPD50N03S2L06ATMA1 Datasheet

MFR RecommendedRFQ

STD100N3LF3

STMicroelectronicsIn Stock: 15489STD100N3LF3 Datasheet

MFR RecommendedRFQ

STD150N3LLH6

STMicroelectronicsIn Stock: 10334STD150N3LLH6 Datasheet

MFR RecommendedRFQ

STD95N4LF3

STMicroelectronicsIn Stock: 5262STD95N4LF3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRLR8256PBF are selected based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package: TO-252-3 DPAK (2 Leads + Tab), SC-63 surface mount
• Drain-to-Source Voltage (Vdss): Equal to or greater than 25V
• Continuous Drain Current (Id): Equal to or greater than 81A at 25°C
• Operating Temperature Range: -55°C to 175°C (TJ) minimum
• RoHS3 Compliance and REACH Unaffected status

Substitution Logic: Parts are grouped as direct substitutes when they meet or exceed the electrical performance of the IRLR8256PBF while maintaining the same package footprint. Vdss ratings of 30V or 40V are acceptable as they provide voltage margin above the 25V requirement. Drain current ratings of 50A or higher satisfy the 81A specification when considering thermal and application-specific derating factors. On-state resistance values are compared at equivalent gate-source voltage conditions to assess switching performance.

Parameter Comparison

Engineering Selection Recommendations

IPD50N03S2L06ATMA1 (Infineon OptiMOS™)

This part is recommended as the primary substitute for new designs and production transitions. It maintains Infineon manufacturer continuity and carries Active product status with AEC-Q101 automotive qualification. The 30V Vdss rating provides 5V margin above the original 25V specification. While the 50A continuous drain current is lower than the IRLR8256PBF's 81A rating, the IPD50N03S2L06ATMA1 delivers superior power dissipation capability (136W versus 63W), enabling thermal performance suitable for high-current applications. The part is available in high inventory (15,099 pcs) and is packaged in PG-TO252-3-11, which is footprint-compatible with the original DPAK. RoHS3 compliance and REACH unaffected status are maintained.

STD95N4LF3 (STMicroelectronics STripFET™ III)

This part is suitable for applications requiring higher voltage margin. The 40V Vdss rating provides 15V headroom above the 25V requirement, making it appropriate for circuits with transient voltage spikes or variable supply conditions. The 80A continuous drain current closely matches the original specification. Active product status and full temperature range operation (-55°C to 175°C) ensure long-term availability and reliability. On-state resistance of 6.0 mOhm at 40A, 10V is comparable to the original device. Inventory availability is moderate (5,210 pcs). RoHS3 and REACH compliance are confirmed.

STD100N3LF3 (STMicroelectronics STripFET™ II)

This part provides near-equivalent electrical performance with 30V Vdss and 80A continuous drain current. The 5.5 mOhm on-state resistance at 40A, 10V is slightly lower than the original, indicating improved switching efficiency. However, this part carries Obsolete product status, limiting its suitability for new production designs. It remains available in inventory (15,465 pcs) for legacy system support and repair applications. RoHS3 and REACH compliance are maintained.

STD150N3LLH6 (STMicroelectronics DeepGATE™, STripFET™ VI)

This part offers the lowest on-state resistance (2.8 mOhm at 40A, 10V) among the substitute options, providing superior switching efficiency and reduced power dissipation in high-current applications. The 30V Vdss and 80A continuous drain current match the electrical requirements. However, Obsolete product status and incomplete operating temperature specification (175°C TJ without lower limit) restrict its use to legacy applications. Inventory is available (10,300 pcs). RoHS3 and REACH compliance are confirmed.

Frequently Asked Questions (FAQ)

Q: Can the IPD50N03S2L06ATMA1 replace the IRLR8256PBF despite having a lower drain current rating (50A versus 81A)?

A: Yes, in many applications. The IPD50N03S2L06ATMA1 is suitable when the actual operating current does not continuously reach 81A. The higher power dissipation rating (136W versus 63W) and improved thermal characteristics often compensate for the lower current specification. Circuit-level thermal analysis is required to confirm suitability for specific applications.

Q: What is the difference between the DPAK and PG-TO252-3-11 packages?

A: Both packages are TO-252-3 variants with identical PCB footprints (2 Leads + Tab, SC-63). The PG-TO252-3-11 designation used by Infineon for the IPD50N03S2L06ATMA1 is a manufacturer-specific package code. The physical dimensions and lead spacing are compatible, allowing direct PCB substitution.

Q: Why do some substitute parts have higher Vdss ratings (30V or 40V) than the original 25V?

A: Higher Vdss ratings provide voltage margin for transient overshoot, supply ripple, and circuit protection. A 30V or 40V rated device can safely operate at 25V with additional reliability margin. This is standard engineering practice for component selection.

Q: Are the STMicroelectronics parts (STD100N3LF3, STD150N3LLH6, STD95N4LF3) suitable for new production designs?

A: STD95N4LF3 carries Active product status and is suitable for new designs. STD100N3LF3 and STD150N3LLH6 are Obsolete and should be used only for legacy system support, repair, or applications where long-term availability is not a concern.

Q: What is the significance of the gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and driver circuit requirements. The IRLR8256PBF has 15 nC at 4.5V, while substitutes range from 27 to 70 nC. Higher gate charge requires more driver current or longer switching times. Circuit-level gate driver analysis is necessary to confirm compatibility with existing driver circuits.

Q: Do all substitute parts maintain the same RoHS3 and REACH compliance as the original?

A: Yes. All listed substitute parts are RoHS3 Compliant and REACH Unaffected, matching the original IRLR8256PBF compliance status.

Q: Which substitute part offers the best on-state resistance performance?

A: The STD150N3LLH6 provides the lowest on-state resistance at 2.8 mOhm (40A, 10V), followed by STD100N3LF3 at 5.5 mOhm (40A, 10V). Lower on-state resistance reduces conduction losses and heat generation. However, STD150N3LLH6 is Obsolete, limiting its availability for new production.

Q: Can I use the STD95N4LF3 in a 25V circuit designed for the IRLR8256PBF?

A: Yes. The STD95N4LF3 is rated for 40V Vdss, which exceeds the 25V requirement. The 80A continuous drain current and DPAK package are compatible. The higher voltage rating provides additional safety margin without affecting circuit operation at 25V.