IRLR8113TR N-Channel 30V 94A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR8113TR is an N-Channel 30V 94A MOSFET manufactured by Infineon Technologies in the HEXFET® series. This surface mount device in TO-252AA (DPAK) packaging is designed for high-current switching applications with a maximum drain-source voltage of 30V and continuous drain current of 94A at 25°C. The part is currently classified as obsolete, making identification of functionally equivalent substitutes essential for ongoing design support and production continuity. Substitute parts must maintain compatibility across drain-source voltage rating, package type, and thermal characteristics while meeting modern compliance standards.

Substiute Parts

IRLR8113TR
Infineon TechnologiesIn Stock: 2781IRLR8113TR Datasheet
IRLR8113TR
Current Part
IPD50N03S207ATMA1
Infineon TechnologiesIn Stock: 47685IPD50N03S207ATMA1 Datasheet
IPD50N03S207ATMA1
MFR Recommended
DMG8880LK3-13
Diodes IncorporatedIn Stock: 19126DMG8880LK3-13 Datasheet
DMG8880LK3-13
MFR Recommended
FDD6670A
onsemiIn Stock: 43216FDD6670A Datasheet
FDD6670A
MFR Recommended
FDD8896
Fairchild SemiconductorIn Stock: 43269FDD8896 Datasheet
FDD8896
MFR Recommended
STD100N3LF3
STMicroelectronicsIn Stock: 15489STD100N3LF3 Datasheet
STD100N3LF3
MFR Recommended
STD86N3LH5
STMicroelectronicsIn Stock: 18983STD86N3LH5 Datasheet
STD86N3LH5
MFR Recommended
STD95N4F3
STMicroelectronicsIn Stock: 20293STD95N4F3 Datasheet
STD95N4F3
MFR Recommended

Key Parameters

Parameter Value Unit Condition
Drain to Source Voltage (Vdss) 30 V Maximum rating
Continuous Drain Current (Id) 94 A @ 25°C (Tc)
On-State Resistance (Rds On) 6 mOhm @ 15A, 10V Vgs
Gate Threshold Voltage (Vgs(th)) 2.25 V @ 250µA
Power Dissipation (Max) 89 W @ Tc
Operating Temperature Range -55 to 175 °C Junction temperature (TJ)
Package Type TO-252-3 (DPAK) Surface mount, 2 leads + tab
Gate Charge (Qg) 32 nC @ 4.5V
Input Capacitance (Ciss) 2920 pF @ 15V Vds

Substitute Part Grouping Explanation

Substitution eligibility for the IRLR8113TR is determined by the following critical parameters:

Primary Compatibility Criteria:

  • Drain-Source Voltage (Vdss): Must equal or exceed 30V
  • Package Type: Must be TO-252-3 (DPAK) surface mount configuration
  • Mounting Type: Surface mount only
  • FET Type: N-Channel MOSFET technology

Secondary Performance Criteria:

  • Continuous Drain Current (Id): Minimum 94A at 25°C to maintain equivalent current handling
  • On-State Resistance (Rds On): Lower or equal values preferred to maintain or improve efficiency
  • Operating Temperature Range: Must support -55°C to 175°C minimum
  • Gate Threshold Voltage (Vgs(th)): Compatibility within ±20V Vgs maximum rating

Compliance Criteria:

  • RoHS Status: Modern substitutes should meet ROHS3 compliance
  • Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for manufacturing flexibility

Substitutes are grouped into three categories based on current rating capability and product status alignment.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs(th) (V) Power Diss. (W) Temp Range (°C) Package Status RoHS
IRLR8113TR Infineon 30 94 (Tc) 6 @ 15A, 10V 2.25 @ 250µA 89 -55 to 175 TO-252-3 Obsolete Non-compliant
STD86N3LH5 STMicroelectronics 30 80 (Tc) 5 @ 40A, 10V 2.5 @ 250µA 70 -55 to 175 TO-252-3 Active ROHS3
STD100N3LF3 STMicroelectronics 30 80 (Tc) 5.5 @ 40A, 10V 2.5 @ 250µA 110 -55 to 175 TO-252-3 Obsolete ROHS3
STD95N4F3 STMicroelectronics 40 80 (Tc) 6.5 @ 40A, 10V 4 @ 250µA 110 -55 to 175 TO-252-3 Active ROHS3
FDD6670A onsemi 30 66 (Tc) 8 @ 15A, 10V 3 @ 250µA 63 -55 to 175 TO-252-3 Last Time Buy ROHS3
FDD8896 Fairchild 30 94 (Tc) 5.7 @ 35A, 10V 2.5 @ 250µA 80 -55 to 175 TO-252-3 Active Not specified
IPD50N03S207ATMA1 Infineon 30 50 (Tc) 7.3 @ 50A, 10V 4 @ 85µA 136 -55 to 175 TO-252-3 Active ROHS3
DMG8880LK3-13 Diodes Inc. 30 11 (Ta) 7.5 @ 11.6A, 10V 2.3 @ 250µA 1.68 -55 to 150 TO-252-3 Active ROHS3

Engineering Selection Recommendations

Primary Substitute (Direct Replacement Capability):

FDD8896 (Fairchild Semiconductor) is the primary substitute for the IRLR8113TR. This part maintains identical 30V Vdss rating and 94A continuous drain current specification, ensuring equivalent current-handling capacity. The TO-252-3 (DPAK) package provides mechanical and thermal compatibility. Operating temperature range of -55°C to 175°C matches the original specification. On-state resistance of 5.7 mOhm at 35A, 10V is superior to the original 6 mOhm specification, providing improved efficiency. Product status is Active, ensuring long-term availability and supply chain stability.

Secondary Substitutes (Current Derating Required):

STD86N3LH5 (STMicroelectronics) is suitable for applications where continuous drain current can be derated to 80A. This part offers superior on-state resistance of 5 mOhm at 40A, 10V and lower power dissipation of 70W. Product status is Active with AEC-Q101 automotive qualification. ROHS3 compliance is confirmed. Operating temperature range extends to 175°C. Gate charge of 14 nC is significantly lower than the original 32 nC, reducing switching losses.

STD100N3LF3 (STMicroelectronics) provides 80A continuous drain current with 5.5 mOhm on-state resistance. Power dissipation of 110W exceeds the original specification. Product status is Obsolete. ROHS3 compliance is confirmed. This part is suitable only where current derating is acceptable and long-term availability is not critical.

STD95N4F3 (STMicroelectronics) operates at 40V Vdss with 80A continuous drain current. This part is suitable for applications where higher voltage margin is required. On-state resistance of 6.5 mOhm is comparable to the original. Product status is Active with ROHS3 compliance. Gate threshold voltage of 4V differs from the original 2.25V, requiring circuit verification for gate drive compatibility.

Limited Current Applications:

IPD50N03S207ATMA1 (Infineon OptiMOS™) is restricted to 50A continuous drain current, representing significant derating from the original 94A specification. This part is suitable only for applications with reduced current requirements. Product status is Active with ROHS3 compliance. Power dissipation of 136W is substantially higher than the original 89W.

DMG8880LK3-13 (Diodes Incorporated) is limited to 11A continuous drain current and is not suitable as a substitute for the IRLR8113TR in high-current applications. This part is included for reference only and represents a different application class.

FDD6670A (onsemi PowerTrench®) provides 66A continuous drain current with 8 mOhm on-state resistance. Product status is Last Time Buy, indicating discontinued production. This part is not recommended for new designs due to supply uncertainty.

Frequently Asked Questions (FAQ)

Q: Can STD86N3LH5 be used as a direct replacement for IRLR8113TR?

A: STD86N3LH5 is mechanically and thermally compatible in TO-252-3 (DPAK) packaging with matching 30V Vdss rating. However, continuous drain current is derated to 80A compared to the original 94A specification. Circuit analysis is required to confirm that the application does not exceed 80A continuous current. If the application operates within 80A limits, STD86N3LH5 is a suitable substitute with improved performance characteristics (lower Rds On, lower gate charge, Active product status, ROHS3 compliance).

Q: Why is FDD8896 recommended as the primary substitute?

A: FDD8896 maintains full electrical equivalence with the IRLR8113TR across all critical parameters: 30V Vdss, 94A continuous drain current, TO-252-3 (DPAK) package, and -55°C to 175°C operating temperature range. On-state resistance of 5.7 mOhm is superior to the original 6 mOhm specification. Product status is Active, ensuring supply chain continuity. These factors make FDD8896 the optimal choice for direct replacement without circuit modification.

Q: What is the impact of using STD95N4F3 with 40V Vdss instead of 30V?

A: STD95N4F3 operates at 40V Vdss, providing 33% higher voltage margin compared to the original 30V specification. This higher voltage rating does not create compatibility issues in circuits designed for 30V operation. However, gate threshold voltage differs (4V vs. 2.25V), requiring verification that the gate drive circuit can reliably turn the device on and off. Input capacitance of 2200 pF is comparable to the original 2920 pF. Current derating to 80A must be confirmed acceptable for the application.

Q: Can IPD50N03S207ATMA1 be used in high-current applications?

A: IPD50N03S207ATMA1 is limited to 50A continuous drain current, representing 47% derating from the original 94A specification. This part is suitable only for applications where continuous current does not exceed 50A. Power dissipation of 136W is substantially higher than the original 89W, requiring thermal management verification. This part is not recommended for applications requiring the full 94A current capability of the IRLR8113TR.

Q: What are the package compatibility requirements for substitution?

A: All recommended substitutes use TO-252-3 (DPAK) surface mount packaging, which is mechanically and thermally identical to the original IRLR8113TR package. This packaging format includes 2 leads plus a center tab for thermal connection. All substitutes are compatible with existing PCB layouts and assembly processes without modification. Moisture sensitivity level is MSL 1 (Unlimited) for all parts, ensuring manufacturing flexibility.

Q: How does gate charge affect switching performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The original IRLR8113TR has gate charge of 32 nC at 4.5V. STD86N3LH5 has significantly lower gate charge of 14 nC at 5V, reducing switching losses and improving efficiency. FDD8896 has gate charge of 60 nC at 10V, which is higher than the original. Lower gate charge reduces power dissipation in the gate drive circuit and enables faster switching transitions. Circuit design must account for gate charge differences when selecting substitutes.

Q: What compliance standards apply to substitute parts?

A: The original IRLR8113TR is RoHS non-compliant. Modern substitutes including STD86N3LH5, STD100N3LF3, STD95N4F3, FDD6670A, and IPD50N03S207ATMA1 are ROHS3 compliant, meeting current environmental regulations. All parts are REACH Unaffected and classified as EAR99 for export control purposes. Moisture sensitivity level is MSL 1 (Unlimited) for all parts, eliminating moisture-related manufacturing constraints.

Q: Is thermal performance equivalent across all substitutes?

A: Thermal performance varies significantly among substitutes. The original IRLR8113TR has power dissipation of 89W at Tc. FDD8896 has 80W (improved), STD86N3LH5 has 70W (improved), STD100N3LF3 has 110W (higher), and IPD50N03S207ATMA1 has 136W (significantly higher). Lower power dissipation reduces thermal management requirements. Circuit thermal analysis is required when selecting substitutes with different power dissipation ratings to ensure adequate heat sinking.

Q: Can obsolete parts like STD100N3LF3 be used in new designs?

A: STD100N3LF3 is classified as Obsolete, indicating discontinued production. While this part may be available from inventory, it is not recommended for new designs due to uncertain long-term supply. FDD8896 and STD86N3LH5 are both Active products with confirmed ongoing production, making them more suitable for new designs requiring long-term component availability.

Request Quote (Ships tomorrow)