IRLR8113PBF N-Channel 30V 94A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR8113PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 94A continuous drain current in a Surface Mount TO-252AA (DPAK) package. This device belongs to the HEXFET® series and is classified as Obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain compatibility across electrical ratings, package form factor, and thermal characteristics to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	94	A (Tc)
On-Resistance (Rds On) @ 15A, 10V	6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.25	V
Gate Charge (Qg) @ 4.5V	32	nC
Power Dissipation (Max)	89	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 DPAK	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRLR8113PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must equal or exceed 94A at Tc rating
Package Type: Must be TO-252-3 DPAK (Surface Mount)
Gate Threshold Voltage (Vgs(th)): Must be compatible within ±20V gate voltage specification
Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower values indicate improved performance; values at or below 6mOhm @ 10V are preferred
Gate Charge (Qg): Lower values reduce switching losses; reference point is 32nC
Power Dissipation: Must support minimum 89W thermal capability
Moisture Sensitivity Level: MSL 1 (Unlimited) required for reliability

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria) and Functional Alternatives (meeting electrical requirements with acceptable parameter variations for specific applications).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On @ 10V (mOhm)	Vgs(th) @ 250µA (V)	Qg @ Vgs (nC)	Power Diss. (W)	Pkg Type	Status
IRLR8113PBF	Infineon	30	94	6.0	2.25	32 @ 4.5V	89	TO-252AA	Obsolete
STD86N3LH5	STMicroelectronics	30	80	5.0	2.5	14 @ 5V	70	DPAK	Active
STD100N3LF3	STMicroelectronics	30	80	5.5	2.5	27 @ 5V	110	DPAK	Obsolete
STD95N4F3	STMicroelectronics	40	80	6.5	4.0	54 @ 10V	110	DPAK	Active
FDD6670A	onsemi	30	66	8.0	3.0	22 @ 5V	63	TO-252AA	Last Time Buy
IPD50N03S207ATMA1	Infineon	30	50	7.3	4.0	68 @ 10V	136	PG-TO252-3-11	Active
DMG8880LK3-13	Diodes Incorporated	30	11	7.5	2.3	27.6 @ 10V	1.68	TO-252	Active
FDD8896	Fairchild Semiconductor	30	94	5.7	2.5	60 @ 10V	80	TO-252	Active

Engineering Selection Recommendations

Tier 1 - Direct Equivalents (Recommended Primary Substitutes):

FDD8896 (Fairchild Semiconductor): Matches the IRLR8113PBF in continuous drain current (94A @ Tc) and Vdss (30V). Package is TO-252 DPAK, maintaining mechanical compatibility. Product status is Active, ensuring long-term availability. On-resistance of 5.7mOhm @ 35A, 10V is superior to the original specification. Power dissipation of 80W is within acceptable thermal envelope. This part is the closest functional equivalent.

STD86N3LH5 (STMicroelectronics): Rated for 30V and 80A @ Tc, with superior on-resistance of 5.0mOhm @ 40A, 10V. Product status is Active with AEC-Q101 automotive qualification. Gate charge of 14nC @ 5V is significantly lower than the original, reducing switching losses. Operating temperature range extends to 175°C. Continuous drain current of 80A is 15% below the original specification; suitable for applications not requiring full 94A capacity.

Tier 2 - Functional Alternatives (Application-Dependent Substitutes):

STD100N3LF3 (STMicroelectronics): Rated for 30V and 80A @ Tc with power dissipation of 110W. On-resistance of 5.5mOhm @ 40A, 10V is competitive. Product status is Obsolete; use only when STD86N3LH5 is unavailable. Suitable for thermal-limited applications due to higher power dissipation capability.

STD95N4F3 (STMicroelectronics): Rated for 40V (higher than original 30V) and 80A @ Tc. On-resistance of 6.5mOhm @ 40A, 10V is acceptable. Product status is Active. Suitable for applications requiring higher voltage margin; gate threshold of 4.0V @ 250µA differs from original 2.25V, requiring gate drive circuit verification.

IPD50N03S207ATMA1 (Infineon): Rated for 30V and 50A @ Tc with power dissipation of 136W. Product status is Active with ROHS3 compliance. Continuous drain current of 50A is significantly below the original 94A specification; suitable only for reduced-current applications. On-resistance of 7.3mOhm @ 50A, 10V is higher than original.

Tier 3 - Limited Compatibility (Not Recommended for Direct Replacement):

FDD6670A (onsemi): Rated for 30V and 66A @ Tc. Product status is Last Time Buy, indicating end-of-life status. Continuous drain current of 66A is 30% below original specification. On-resistance of 8.0mOhm @ 15A, 10V is higher than original. Use only in applications with reduced current requirements and when other alternatives are unavailable.

DMG8880LK3-13 (Diodes Incorporated): Rated for 30V and 11A @ Tc. Continuous drain current of 11A is insufficient for applications requiring the original 94A specification. Power dissipation of 1.68W is far below the original 89W. Not suitable as a direct substitute; applicable only to low-current circuit variants.

Frequently Asked Questions (FAQ)

Q1: Can STD86N3LH5 directly replace IRLR8113PBF in all applications?

STD86N3LH5 is compatible with applications requiring up to 80A continuous drain current at 25°C. If the original design operates at or below 80A, direct substitution is valid. For designs requiring the full 94A specification, FDD8896 is the recommended alternative. Both parts share identical Vdss (30V), package type (DPAK), and operating temperature range (-55°C to 175°C).

Q2: What is the significance of the lower gate charge in STD86N3LH5 compared to IRLR8113PBF?

Gate charge (Qg) of 14nC in STD86N3LH5 versus 32nC in IRLR8113PBF indicates reduced switching losses and faster switching transitions. This improves efficiency in high-frequency switching applications. Gate drive circuits designed for the original part will operate with improved performance margins using STD86N3LH5.

Q3: Why is STD95N4F3 rated for 40V instead of 30V?

STD95N4F3 is designed for higher voltage applications (40V Vdss). It can be used in 30V circuits as a substitute, providing additional voltage margin for transient protection. However, the higher gate threshold voltage (4.0V versus 2.25V) requires verification that the gate drive circuit can reliably turn the device on and off within the specified voltage range.

Q4: Is FDD8896 suitable for all IRLR8113PBF applications?

FDD8896 matches the IRLR8113PBF in both continuous drain current (94A @ Tc) and Vdss (30V). Package compatibility is confirmed (TO-252 DPAK). Active product status ensures availability. FDD8896 is suitable for direct replacement in all applications where the original part was used, with the advantage of improved on-resistance (5.7mOhm versus 6.0mOhm).

Q5: Can IPD50N03S207ATMA1 be used as a substitute?

IPD50N03S207ATMA1 is rated for only 50A continuous drain current, which is 47% below the original 94A specification. This part is suitable only for circuit variants or applications redesigned for reduced current. It is not a direct substitute for the original IRLR8113PBF in high-current applications.

Q6: What packaging considerations apply to these substitutes?

All recommended substitutes use TO-252-3 DPAK or equivalent surface mount packages (PG-TO252-3-11 for IPD50N03S207ATMA1). PCB footprints are mechanically compatible. Thermal pad dimensions may vary slightly; verify thermal interface design (solder paste, thermal vias) for optimal heat dissipation, particularly for high-power applications.

Q7: Are there compliance or certification differences between substitutes?

STD86N3LH5 carries AEC-Q101 automotive qualification, suitable for automotive applications. IPD50N03S207ATMA1 is ROHS3 compliant. All parts listed are REACH Unaffected and carry EAR99 ECCN classification. Verify specific compliance requirements for your application before final selection.

Q8: How do on-resistance differences affect circuit performance?

On-resistance (Rds On) directly impacts power dissipation and heat generation. Lower Rds On values reduce I²R losses. STD86N3LH5 (5.0mOhm) and FDD8896 (5.7mOhm) offer improved efficiency compared to IRLR8113PBF (6.0mOhm). In high-current applications, these differences accumulate to measurable thermal and efficiency improvements.

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