IRLR8113 N-Channel 30V 94A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR8113 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 94A continuous drain current at 25°C. This device is packaged in TO-252AA (DPAK) surface mount configuration and belongs to the HEXFET® series. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and gate charge parameters while accommodating the same or compatible surface mount packaging.

Key Parameters

Parameter	Value	Unit	Condition
Drain-to-Source Voltage (Vdss)	30	V	Maximum rating
Continuous Drain Current (Id)	94	A	@ 25°C (Tc)
On-Resistance (Rds On)	6	mOhm	@ 15A, 10V Vgs
Gate Threshold Voltage (Vgs(th))	2.25	V	@ 250µA
Gate Charge (Qg)	32	nC	@ 4.5V Vgs
Power Dissipation	89	W	@ Tc
Operating Temperature Range	-55 to 175	°C	Junction temperature (TJ)
Package Type	TO-252-3 DPAK	—	Surface mount
RoHS Status	Non-compliant	—	Legacy part

Substitute Part Grouping Explanation

Substitution of the IRLR8113 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must support 94A or higher at 25°C
On-Resistance (Rds On): Must not exceed 6mOhm at rated conditions to maintain thermal performance
Package Type: Must be TO-252-3 DPAK or compatible surface mount variant
Gate Charge (Qg): Lower values preferred for reduced switching losses; values up to 68nC acceptable
Operating Temperature: Must support -55°C to 175°C range

Substitution Logic: Parts are grouped into two categories based on current rating alignment:

Direct Current Equivalents (80A–94A): Parts with continuous drain current between 80A and 94A at 25°C, maintaining comparable on-resistance and thermal characteristics. These provide the closest functional replacement.
Reduced Current Alternatives (50A–70A): Parts with lower continuous drain current ratings (50A to 70A) suitable for applications where full 94A capacity is not required. These maintain voltage and package compatibility but with reduced current handling.

Parts with drain-source voltage exceeding 30V (such as STD95N4F3 at 40V) are listed as alternatives only when current and on-resistance specifications align, as higher voltage ratings introduce different switching characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Package	Status
IRLR8113	Infineon	30	94 (Tc)	6 @ 15A, 10V	32 @ 4.5V	TO-252-3 DPAK	Obsolete
STD150N3LLH6	STMicroelectronics	30	80 (Tc)	2.8 @ 40A, 10V	29 @ 4.5V	TO-252-3 DPAK	Obsolete
STD100N3LF3	STMicroelectronics	30	80 (Tc)	5.5 @ 40A, 10V	27 @ 5V	TO-252-3 DPAK	Obsolete
STD86N3LH5	STMicroelectronics	30	80 (Tc)	5 @ 40A, 10V	14 @ 5V	TO-252-3 DPAK	Active
FDD8896	Fairchild Semiconductor	30	94 (Tc)	5.7 @ 35A, 10V	60 @ 10V	TO-252 DPAK	Active
FDD6670A	onsemi	30	66 (Tc)	8 @ 15A, 10V	22 @ 5V	TO-252AA	Last Time Buy
TSM060N03ECP ROG	Taiwan Semiconductor	30	70 (Tc)	6 @ 20A, 10V	11.1 @ 4.5V	TO-252 DPAK	Active
IPD50N03S207ATMA1	Infineon	30	50 (Tc)	7.3 @ 50A, 10V	68 @ 10V	PG-TO252-3-11	Active
DMG8880LK3-13	Diodes Incorporated	30	11 (Ta)	7.5 @ 11.6A, 10V	27.6 @ 10V	TO-252 DPAK	Active
STD95N4F3	STMicroelectronics	40	80 (Tc)	6.5 @ 40A, 10V	54 @ 10V	TO-252-3 DPAK	Active

Engineering Selection Recommendations

For Direct Current Replacement (94A Equivalent):

FDD8896 (Fairchild Semiconductor) is the primary equivalent for the IRLR8113. Both devices share identical 30V/94A ratings and TO-252 DPAK packaging. FDD8896 is currently in active production status, addressing the obsolescence of the IRLR8113. On-resistance of 5.7mOhm at 35A, 10V is comparable to the original 6mOhm specification. Gate charge of 60nC at 10V is higher than the original 32nC at 4.5V, requiring verification of gate drive circuit capability in switching applications. Power dissipation rating of 80W (Tc) is slightly lower than the original 89W, necessitating thermal analysis for high-current applications.

For High-Current Applications with Improved Performance:

STD86N3LH5 (STMicroelectronics) provides 80A continuous current with superior on-resistance of 5mOhm at 40A, 10V and significantly reduced gate charge of 14nC at 5V. This part is in active production with AEC-Q101 automotive qualification. The lower gate charge reduces switching losses and simplifies gate drive design. Operating temperature range extends to 175°C (TJ). RoHS3 compliance is provided. This part is suitable for applications where the full 94A is not required but improved efficiency is beneficial.

For Reduced Current Applications:

TSM060N03ECP ROG (Taiwan Semiconductor Corporation) supports 70A continuous current with on-resistance of 6mOhm at 20A, 10V and exceptionally low gate charge of 11.1nC at 4.5V. This part is in active production with RoHS3 compliance. The low gate charge is advantageous for high-frequency switching applications. Moisture sensitivity level is MSL 3 (168 hours), requiring controlled storage conditions.

IPD50N03S207ATMA1 (Infineon Technologies) provides 50A continuous current with on-resistance of 7.3mOhm at 50A, 10V. This part is in active production with RoHS3 compliance and represents the manufacturer's current-generation OptiMOS™ technology. Higher power dissipation rating of 136W (Tc) supports thermal performance. Gate charge of 68nC at 10V requires gate drive verification.

For Lower Current Applications:

DMG8880LK3-13 (Diodes Incorporated) is rated for 11A continuous current with on-resistance of 7.5mOhm at 11.6A, 10V. This part is in active production with RoHS3 compliance. It is suitable only for applications where current requirements are significantly reduced from the original 94A specification.

Voltage Rating Consideration:

STD95N4F3 (STMicroelectronics) is rated for 40V drain-source voltage with 80A continuous current. This part is in active production with RoHS3 compliance. The higher voltage rating provides additional design margin for transient overvoltage conditions but introduces different switching characteristics. Selection of this part requires confirmation that the application circuit can accommodate the higher voltage rating without performance degradation.

Compliance and Production Status:

All recommended active-status substitutes provide RoHS3 compliance, addressing environmental regulatory requirements that the obsolete IRLR8113 does not meet. Parts in active production status (STD86N3LH5, FDD8896, TSM060N03ECP ROG, IPD50N03S207ATMA1, DMG8880LK3-13, STD95N4F3) ensure long-term availability and supply chain stability. Obsolete-status parts (STD150N3LLH6, STD100N3LF3) and last-time-buy status parts (FDD6670A) are suitable only for legacy design support with limited production quantities.

Frequently Asked Questions (FAQ)

Q: Can STD86N3LH5 directly replace IRLR8113 in all applications?

A: STD86N3LH5 is electrically compatible with IRLR8113 for applications requiring up to 80A continuous current at 30V. Both devices use TO-252-3 DPAK packaging and support -55°C to 175°C operating temperature. However, STD86N3LH5 has significantly lower gate charge (14nC vs. 32nC), which may require gate drive circuit adjustment. Thermal analysis is necessary because STD86N3LH5 power dissipation is not specified at the same conditions as IRLR8113. For applications requiring the full 94A rating, FDD8896 is the appropriate choice.

Q: What is the difference between Tc and Ta current ratings?

A: Tc (case temperature) ratings assume the device case is maintained at 25°C through external cooling. Ta (ambient temperature) ratings assume the device operates in ambient air at 25°C without external cooling. Tc ratings are typically higher because they represent the device's maximum capability under ideal thermal conditions. When selecting a substitute, compare Tc-to-Tc or Ta-to-Ta ratings to ensure equivalent current handling capacity under the same thermal assumptions.

Q: Why does FDD8896 have higher gate charge than IRLR8113?

A: Gate charge (Qg) is measured at different gate-source voltages for different devices. IRLR8113 specifies 32nC at 4.5V, while FDD8896 specifies 60nC at 10V. Higher gate-source voltage typically results in higher gate charge. The gate drive circuit must supply sufficient charge to reach the specified Vgs voltage. Verify that the existing gate drive circuit can deliver the required charge at the specified voltage for FDD8896 before substitution.

Q: Is STD95N4F3 suitable as a substitute despite its 40V rating?

A: STD95N4F3 has a 40V drain-source voltage rating compared to IRLR8113's 30V rating. This higher voltage rating does not prevent substitution in 30V applications; the device will operate safely at lower voltages. However, the higher voltage rating affects internal device structure, resulting in different on-resistance (6.5mOhm vs. 6mOhm) and gate charge (54nC vs. 32nC) characteristics. Substitution is acceptable only if the application circuit design does not depend on the specific electrical characteristics of the 30V device.

Q: Can DMG8880LK3-13 replace IRLR8113?

A: DMG8880LK3-13 is rated for only 11A continuous current, compared to IRLR8113's 94A. This part is suitable only for applications where current requirements are significantly lower than the original design. Substitution is not appropriate for applications requiring the full 94A capability. Use DMG8880LK3-13 only when the circuit has been redesigned for reduced current operation.

Q: What does RoHS3 compliance mean for substitution?

A: RoHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. IRLR8113 is RoHS non-compliant (legacy part). All recommended active-status substitutes are RoHS3 compliant, meeting current environmental regulations. For new designs or production in regulated markets, RoHS3-compliant substitutes are mandatory.

Q: Why is gate charge important for substitution?

A: Gate charge determines the amount of electrical charge the gate drive circuit must supply to switch the MOSFET on and off. Higher gate charge requires more drive current or longer switching time. If the existing gate drive circuit has limited current capacity, a substitute with significantly higher gate charge may not switch the device fully on or off, resulting in increased on-resistance, power dissipation, and heat generation. Verify gate drive circuit specifications before selecting a substitute with different gate charge.

Q: What is the significance of MSL (Moisture Sensitivity Level)?

A: MSL indicates how sensitive the device is to moisture absorption during storage and handling. MSL 1 (unlimited) means the device can be stored indefinitely without moisture control. MSL 3 (168 hours) means the device must be used within 168 hours of opening the moisture barrier bag, or it must be baked to remove absorbed moisture. TSM060N03ECP ROG has MSL 3, requiring controlled storage and handling procedures. Verify that your supply chain and manufacturing processes can accommodate MSL 3 requirements before selecting this part.

Q: Can multiple substitute parts be used interchangeably in the same production run?

A: No. Each substitute part has different electrical characteristics (on-resistance, gate charge, power dissipation). Using different parts in the same production run will result in inconsistent circuit performance, thermal behavior, and reliability. Select a single substitute part for production and maintain consistent sourcing. If supply constraints require multiple sources, qualify each part separately and document the differences in design specifications and thermal analysis.

Q: What thermal analysis is required before substitution?

A: Thermal analysis must verify that the substitute part's power dissipation rating is adequate for the application's operating conditions. Power dissipation depends on on-resistance (Rds On), continuous current, and duty cycle. Calculate power dissipation as P = I²R. Compare the result to the substitute part's power dissipation rating at the expected case or ambient temperature. If the substitute has lower power dissipation rating than the original, verify that the application's thermal design (heatsink, PCB copper area) can maintain acceptable junction temperature. This analysis is essential before substitution.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message