IRLR8103TR N-Channel 30V 89A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR8103TR is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications in the 30V class. This device features a continuous drain current rating of 89A at 25°C (Ta) and is housed in a Surface Mount TO-252AA (DPAK) package. The part is classified as Obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRLR8103TR belongs to the HEXFET® series and is suitable for applications requiring robust switching performance with moderate gate charge and low on-state resistance characteristics.

Key Parameters

Parameter	Value	Unit
Manufacturer Part Number	IRLR8103TR	—
Manufacturer	Infineon Technologies	—
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	89	A (Ta)
Rds On (Max) @ Id, Vgs	7	mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs	50	nC @ 5V
Vgs(th) (Max) @ Id	2	V @ 250µA
Vgs (Max)	±20	V
Power Dissipation (Max)	89	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—
Product Status	Obsolete	—
RoHS Status	RoHS non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRLR8103TR is determined by strict adherence to the following electrical and mechanical parameters:

Critical Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 30V
Package / Case: Must be TO-252-3, DPAK (2 Leads + Tab), SC-63 for mechanical compatibility
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Mounting Type: Must be Surface Mount

Secondary Compatibility Parameters:

Continuous Drain Current (Id) @ 25°C: Substitute must meet or exceed 89A (Ta) or provide equivalent thermal performance
Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Values within the range of 22–68 nC are acceptable for switching applications
Vgs(th) and Vgs (Max): Must remain within ±20V gate voltage specification
Operating Temperature Range: Must support -55°C to 150°C minimum

Compliance Considerations:

RoHS Status: Substitutes with ROHS3 Compliance are preferred for new designs
Product Status: Active or Last Time Buy status ensures continued availability

Three substitute parts meet these criteria and are listed below.

Parameter Comparison

Parameter	IRLR8103TR	IPD50N03S2L06ATMA1	DMG8880LK3-13	FDD6670A	FDD8896
Manufacturer	Infineon	Infineon	Diodes Inc.	onsemi	Fairchild
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	89 (Ta)	50 (Tc)	11 (Ta)	15 (Ta) / 66 (Tc)	17 (Ta) / 94 (Tc)
Rds On (Max) (mOhm)	7 @ 15A, 10V	6.4 @ 50A, 10V	7.5 @ 11.6A, 10V	8 @ 15A, 10V	5.7 @ 35A, 10V
Qg (Max) (nC)	50 @ 5V	68 @ 10V	27.6 @ 10V	22 @ 5V	60 @ 10V
Vgs(th) (Max) (V)	2 @ 250µA	2 @ 85µA	2.3 @ 250µA	3 @ 250µA	2.5 @ 250µA
Vgs (Max) (V)	±20	±20	±20	±20	±20
Power Dissipation (Max) (W)	89 (Tc)	136 (Tc)	1.68 (Ta)	3.2 (Ta) / 63 (Tc)	80 (Tc)
Operating Temp Range (°C)	-55 to 150	-55 to 175	-55 to 150	-55 to 175	-55 to 175
Package	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK
Product Status	Obsolete	Active	Active	Last Time Buy	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified

Engineering Selection Recommendations

IPD50N03S2L06ATMA1 (Infineon Technologies)

This substitute is recommended as the primary alternative to the IRLR8103TR. The IPD50N03S2L06ATMA1 is an Active product from the same manufacturer (Infineon), ensuring design continuity and technical support. It features ROHS3 compliance and AEC-Q101 automotive qualification, making it suitable for regulated applications. The device provides superior power dissipation capability (136W Tc versus 89W Tc) and an extended operating temperature range (-55°C to 175°C). While the continuous drain current is rated at 50A (Tc), the higher power dissipation rating and lower on-state resistance (6.4 mOhm) provide equivalent or improved thermal performance in most switching applications. Gate charge is slightly elevated (68 nC @ 10V) but remains within acceptable switching frequency ranges.

FDD8896 (Fairchild Semiconductor)

This substitute provides the closest current rating match to the IRLR8103TR, with 94A (Tc) continuous drain current. The FDD8896 is an Active product with excellent on-state resistance (5.7 mOhm @ 35A, 10V) and power dissipation (80W Tc), making it suitable for high-current applications. The extended operating temperature range (-55°C to 175°C) exceeds the original specification. Gate charge is 60 nC @ 10V, comparable to the original part. This device is recommended for applications where maximum current handling and thermal performance are critical design factors.

FDD6670A (onsemi)

This substitute is classified as Last Time Buy, indicating limited future availability. The FDD6670A offers dual current ratings (15A Ta / 66A Tc) and power dissipation (3.2W Ta / 63W Tc), providing flexibility for different thermal measurement conditions. ROHS3 compliance and extended operating temperature range (-55°C to 175°C) are provided. The lower gate charge (22 nC @ 5V) may reduce switching losses in high-frequency applications. This device is suitable for applications where gate charge minimization is a design priority, but procurement should account for Last Time Buy status.

DMG8880LK3-13 (Diodes Incorporated)

This substitute is not recommended as a direct replacement due to significantly reduced current rating (11A Ta versus 89A Ta). While the device meets all mechanical and electrical compatibility criteria, the current capacity is insufficient for applications designed around the IRLR8103TR's 89A specification. This part may be suitable only for redesigned circuits with reduced current requirements.

Frequently Asked Questions (FAQ)

Q1: Can I use IPD50N03S2L06ATMA1 as a direct drop-in replacement for IRLR8103TR?

A: Yes, the IPD50N03S2L06ATMA1 is mechanically and electrically compatible. Both devices share identical Vdss (30V), package (TO-252-3 DPAK), and gate voltage specifications (±20V). The IPD50N03S2L06ATMA1 provides superior power dissipation (136W Tc) and lower on-state resistance (6.4 mOhm), making it suitable for direct substitution in most applications. However, verify that your circuit design does not depend on the specific gate charge or current rating of the original part.

Q2: Why is the continuous drain current different between IRLR8103TR and the substitute parts?

A: Continuous drain current ratings are measured under specific thermal conditions, either at ambient temperature (Ta) or case temperature (Tc). The IRLR8103TR is rated at 89A (Ta), while substitutes such as IPD50N03S2L06ATMA1 are rated at 50A (Tc). These measurements reflect different thermal test conditions. The higher power dissipation rating of the substitute (136W Tc) often indicates equivalent or superior thermal performance under actual operating conditions. Consult thermal analysis and application notes to confirm suitability for your specific current and temperature requirements.

Q3: Is RoHS compliance important for my application?

A: RoHS compliance is mandatory for products sold in the European Union and many other regulated markets. The IRLR8103TR is RoHS non-compliant, while IPD50N03S2L06ATMA1, DMG8880LK3-13, and FDD6670A are ROHS3 compliant. If your application or end market requires RoHS compliance, select a compliant substitute. For legacy or non-regulated applications, RoHS status may not be a constraint.

Q4: Can I use FDD6670A if it is Last Time Buy?

A: FDD6670A is available in current inventory (43,200 Pcs), but Last Time Buy status indicates that the manufacturer will discontinue production. This part is suitable for immediate projects but not recommended for long-term production planning. For designs requiring sustained component availability, select IPD50N03S2L06ATMA1 or FDD8896, both classified as Active products.

Q5: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and driver power requirements. The IRLR8103TR has 50 nC @ 5V, while substitutes range from 22 nC (FDD6670A) to 68 nC (IPD50N03S2L06ATMA1). Lower gate charge reduces switching losses and driver stress, beneficial in high-frequency applications. Higher gate charge may require stronger gate drivers but does not affect DC switching performance. Verify that your gate driver circuit can supply the required charge for your selected substitute.

Q6: Are all substitute parts available in the same package?

A: Yes, all substitute parts are housed in TO-252-3 DPAK (2 Leads + Tab), SC-63 package, ensuring mechanical compatibility with the IRLR8103TR. PCB layout and thermal management considerations remain identical across all listed substitutes.

Q7: Which substitute should I choose for maximum current handling?

A: FDD8896 provides the highest continuous drain current rating at 94A (Tc), exceeding the IRLR8103TR specification of 89A (Ta). This device also features the lowest on-state resistance (5.7 mOhm @ 35A, 10V) among all substitutes, making it optimal for high-current, low-loss applications.

Q8: Can I use DMG8880LK3-13 in my design?

A: DMG8880LK3-13 is mechanically and electrically compatible but is not recommended as a direct replacement due to its significantly lower continuous drain current (11A Ta). This part is suitable only for redesigned circuits with reduced current requirements or for applications where the original 89A rating was over-specified.

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