IRLR7843TR N-Channel 30V 161A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR7843TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 161A continuous drain current at 25°C. This device is housed in a TO-252-3 (DPAK) surface mount package and is part of the HEXFET® series. The part is classified as Obsolete, indicating it is no longer in active production. Identifying equivalent and substitute parts is necessary for design continuity, supply chain management, and compliance with current manufacturing standards. Alternative parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating packaging and availability constraints.

Substiute Parts

IRLR7843TR
Infineon TechnologiesIn Stock: 2715IRLR7843TR Datasheet
IRLR7843TR
Current Part
IPD90N03S4L03ATMA1
Infineon TechnologiesIn Stock: 12525IPD90N03S4L03ATMA1 Datasheet
IPD90N03S4L03ATMA1
MFR Recommended
IRLR7843TRLPBF
Infineon TechnologiesIn Stock: 14559IRLR7843TRLPBF Datasheet
IRLR7843TRLPBF
Parametric Equivalent
IRLR7843TRPBF
Infineon TechnologiesIn Stock: 37120IRLR7843TRPBF Datasheet
IRLR7843TRPBF
Parametric Equivalent
FDD8870
onsemiIn Stock: 3666FDD8870 Datasheet
FDD8870
MFR Recommended
STD100N3LF3
STMicroelectronicsIn Stock: 15489STD100N3LF3 Datasheet
STD100N3LF3
MFR Recommended
STD150N3LLH6
STMicroelectronicsIn Stock: 10334STD150N3LLH6 Datasheet
STD150N3LLH6
MFR Recommended

Key Parameters

Parameter Value Unit Specification Basis
Drain-to-Source Voltage (Vdss) 30 V Maximum rated voltage
Continuous Drain Current (Id) @ 25°C 161 A (Tc) Maximum continuous current at case temperature
On-Resistance (Rds On) @ Id, Vgs 3.3 mOhm @ 15A, 10V mOhm Conduction loss characteristic
Gate Threshold Voltage (Vgs(th)) @ Id 2.3 V @ 250µA Gate drive requirement
Power Dissipation (Max) 140 W (Tc) Thermal management limit
Operating Temperature Range -55 to 175 °C (TJ) Junction temperature limits
Package Type TO-252-3 (DPAK) Surface mount form factor
FET Technology N-Channel MOSFET Metal oxide semiconductor type

Substitute Part Grouping Explanation

Substitute parts for the IRLR7843TR are classified into two categories based on electrical equivalence and parametric compatibility:

Parametric Equivalents maintain identical or near-identical electrical specifications across all critical parameters. These parts share the same Vdss (30V), Id (161A), Rds On (3.3 mOhm @ 15A, 10V), and power dissipation (140W). Parametric equivalents are direct replacements with no circuit redesign required.

Manufacturer-Recommended Substitutes provide functional equivalence within acceptable operating ranges but may differ in one or more secondary parameters. These parts maintain the 30V voltage rating and surface mount DPAK package but may have reduced continuous current ratings, different on-resistance values, or modified gate charge characteristics. Selection of manufacturer-recommended substitutes requires verification that the application can tolerate the parameter variations.

Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
  • Package Type: Must be TO-252-3 (DPAK) or compatible surface mount equivalent
  • Operating Temperature: Must support -55°C to 175°C range
  • Mounting Type: Surface mount only
  • FET Type: N-Channel MOSFET technology required

Parameter Comparison

Parameter IRLR7843TR IRLR7843TRLPBF IRLR7843TRPBF IPD90N03S4L03ATMA1 FDD8870 STD100N3LF3 STD150N3LLH6
Manufacturer Infineon Infineon Infineon Infineon onsemi STMicroelectronics STMicroelectronics
Vdss (V) 30 30 30 30 30 30 30
Id @ 25°C (A) 161 161 161 90 160 80 80
Rds On (mOhm) 3.3 @ 15A, 10V 3.3 @ 15A, 10V 3.3 @ 15A, 10V 3.3 @ 90A, 10V 3.9 @ 35A, 10V 5.5 @ 40A, 10V 2.8 @ 40A, 10V
Vgs(th) (V) 2.3 @ 250µA 2.3 @ 250µA 2.3 @ 250µA 2.2 @ 45µA 2.5 @ 250µA 2.5 @ 250µA 2.5 @ 250µA
Gate Charge Qg (nC) 50 @ 4.5V 50 @ 4.5V 50 @ 4.5V 75 @ 10V 118 @ 10V 27 @ 5V 29 @ 4.5V
Power Dissipation (W) 140 140 140 94 160 110 110
Package TO-252-3 (DPAK) TO-252-3 (DPAK) TO-252-3 (DPAK) PG-TO252-3-11 TO-252AA DPAK DPAK
Series HEXFET® HEXFET® HEXFET® OptiMOS™ PowerTrench® STripFET™ II DeepGATE™, STripFET™ VI
Product Status Obsolete Not For New Designs Active Last Time Buy Obsolete Obsolete Obsolete
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Operating Temp (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 to 175

Engineering Selection Recommendations

Parametric Equivalent Selection:

IRLR7843TRPBF is the primary parametric equivalent. This part maintains all electrical specifications identical to the IRLR7843TR (30V, 161A, 3.3 mOhm Rds On, 140W power dissipation) while offering Active product status and ROHS3 compliance. The IRLR7843TRPBF is available in Cut Tape and Digi-Reel® packaging with 37,110 pieces in stock, providing superior supply chain continuity. This part requires no circuit modifications and is suitable for new designs.

IRLR7843TRLPBF provides identical electrical performance with Not For New Designs status and ROHS3 compliance. This variant is appropriate for legacy system maintenance and repair applications where the original specification must be preserved. Inventory availability is 14,500 pieces.

Manufacturer-Recommended Substitute Selection:

IPD90N03S4L03ATMA1 (Infineon OptiMOS™) is recommended for applications where reduced current capacity is acceptable. This part maintains 30V Vdss and 3.3 mOhm Rds On but provides 90A continuous current versus 161A. Power dissipation is reduced to 94W. The part carries Last Time Buy status with ROHS3 compliance and 12,430 pieces in stock. Gate charge is increased to 75 nC, requiring verification of gate drive circuit capability.

FDD8870 (onsemi PowerTrench®) offers 160A continuous current and 160W power dissipation, closely matching the original specification. On-resistance is slightly higher at 3.9 mOhm. Gate charge is significantly elevated at 118 nC, requiring gate drive circuit assessment. The part is Obsolete with ROHS3 compliance and 3,602 pieces in stock.

STD150N3LLH6 (STMicroelectronics DeepGATE™/STripFET™ VI) provides superior on-resistance at 2.8 mOhm but reduced current capacity at 80A and power dissipation at 110W. This part is suitable for applications prioritizing efficiency over current handling. Obsolete status with ROHS3 compliance and 10,300 pieces in stock.

STD100N3LF3 (STMicroelectronics STripFET™ II) offers 80A current and 110W power dissipation with 5.5 mOhm on-resistance. Gate charge is minimal at 27 nC, reducing gate drive requirements. Obsolete status with ROHS3 compliance and 15,465 pieces in stock.

Compliance Considerations:

All substitute parts except the original IRLR7843TR are ROHS3 compliant. For applications requiring RoHS compliance, IRLR7843TRPBF is the preferred direct replacement. All parts maintain REACH Unaffected status and EAR99 export classification.


Frequently Asked Questions (FAQ)

Q1: Can IRLR7843TRPBF be used as a direct replacement for IRLR7843TR?

A: Yes. IRLR7843TRPBF is a parametric equivalent with identical electrical specifications (30V, 161A, 3.3 mOhm Rds On, 140W). The primary differences are packaging format (Cut Tape & Digi-Reel® versus Tape & Reel) and product status (Active versus Obsolete). No circuit modifications are required. IRLR7843TRPBF is ROHS3 compliant, whereas IRLR7843TR is not.

Q2: What is the difference between IRLR7843TRLPBF and IRLR7843TRPBF?

A: Both parts are parametric equivalents with identical electrical specifications. IRLR7843TRLPBF has Not For New Designs status, indicating it is suitable for legacy applications and repairs. IRLR7843TRPBF has Active status, making it appropriate for new designs. Both are ROHS3 compliant. Packaging differs: IRLR7843TRLPBF is Tape & Reel, while IRLR7843TRPBF is Cut Tape & Digi-Reel®.

Q3: Can IPD90N03S4L03ATMA1 replace IRLR7843TR in all applications?

A: No. IPD90N03S4L03ATMA1 has reduced continuous drain current (90A versus 161A) and lower power dissipation (94W versus 140W). This part is suitable only for applications where the circuit operates at or below 90A continuous current. Gate charge is increased to 75 nC, requiring verification that the gate drive circuit can supply this charge within the required switching time. Voltage rating (30V) and on-resistance (3.3 mOhm) are equivalent.

Q4: Why is gate charge (Qg) important when selecting a substitute?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge increases switching losses and may require a more robust gate drive circuit. IRLR7843TR has 50 nC gate charge at 4.5V. IPD90N03S4L03ATMA1 has 75 nC at 10V, and FDD8870 has 118 nC at 10V. If the existing gate drive circuit has limited current capability, substitutes with higher gate charge may cause slower switching or incomplete gate drive, degrading performance.

Q5: Are all substitute parts available in the same package?

A: All substitute parts use TO-252-3 (DPAK) or compatible surface mount packages. However, supplier device package designations vary: IRLR7843TR uses TO-252AA (DPAK), IPD90N03S4L03ATMA1 uses PG-TO252-3-11, FDD8870 uses TO-252AA, and STMicroelectronics parts use DPAK. These are mechanically and electrically compatible for PCB mounting, but pin assignment and thermal pad characteristics should be verified against the specific datasheet.

Q6: What does "Last Time Buy" status mean for IPD90N03S4L03ATMA1?

A: Last Time Buy indicates that the manufacturer has announced end-of-life for this part. Existing inventory will be sold, but no new production runs are planned. After available stock is exhausted, the part will no longer be available. For long-term supply chain planning, IRLR7843TRPBF (Active status) is the recommended choice.

Q7: How does on-resistance (Rds On) affect circuit performance?

A: On-resistance determines conduction losses when the MOSFET is in the on-state. Lower on-resistance reduces power dissipation and heat generation. IRLR7843TR has 3.3 mOhm at 15A, 10V. STD150N3LLH6 has superior 2.8 mOhm at 40A, 10V, reducing losses. However, STD150N3LLH6 is limited to 80A continuous current. For high-current applications requiring 161A, the higher on-resistance of lower-current substitutes may be unacceptable.

Q8: Can I use STD100N3LF3 or STD150N3LLH6 in a 161A application?

A: No. Both STMicroelectronics parts are rated for 80A continuous current, significantly below the 161A requirement of IRLR7843TR. Using these parts in a 161A application would cause excessive junction temperature rise, potential thermal runaway, and device failure. These parts are suitable only for applications requiring 80A or less.

Q9: What is the significance of RoHS compliance for substitute selection?

A: RoHS (Restriction of Hazardous Substances) compliance is mandatory for products sold in the European Union and many other markets. IRLR7843TR is RoHS non-compliant, while all substitute parts listed are ROHS3 compliant. For new designs or products requiring regulatory compliance, IRLR7843TRPBF is the appropriate choice. For legacy systems not subject to RoHS requirements, the original part may remain acceptable if supply is available.

Q10: How do I verify that a substitute part will work in my circuit?

A: Verification requires comparison of critical parameters: (1) Vdss must equal or exceed the maximum voltage in your circuit; (2) continuous drain current (Id) must equal or exceed the maximum sustained current; (3) on-resistance (Rds On) must be acceptable for your power dissipation budget; (4) gate threshold voltage (Vgs(th)) must be compatible with your gate drive voltage; (5) gate charge (Qg) must be within the capability of your gate drive circuit; (6) operating temperature range must encompass your application environment; (7) package must be compatible with your PCB layout. Consult the detailed datasheet for each candidate part to confirm all parameters.

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