IRLR7833TRPBF N-Channel 30V 140A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR7833TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 140A continuous drain current at Tc. This device is packaged in TO-252AA (DPAK) surface mount configuration and belongs to the HEXFET® series. The part is designated as Not For New Designs, indicating it has been superseded in Infineon's product portfolio. Equivalent and substitute parts are necessary for applications requiring continued sourcing, design flexibility, or performance optimization within the specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Id)	140	A (Tc)
On-Resistance @ 15A, 10V (Rds On Max)	4.5	mOhm
Gate Threshold Voltage @ 250µA (Vgs(th) Max)	2.3	V
Gate Charge @ 4.5V (Qg Max)	50	nC
Power Dissipation (Max)	140	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
Maximum Gate Voltage (Vgs)	±20	V

Substitute Part Grouping Explanation

Substitution eligibility for the IRLR7833TRPBF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package: Must be TO-252-3 (DPAK) surface mount
Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Performance Parameters:

Continuous Drain Current (Id @ Tc): Substitute must meet or exceed 140A
On-Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Must support 140W or greater

The substitute parts listed below satisfy the primary criteria and are electrically compatible within the DPAK package footprint. Variations in secondary parameters reflect different manufacturing technologies and performance characteristics from alternative suppliers.

Parameter Comparison

Parameter	IRLR7833TRPBF (Infineon)	NVD4C05NT4G (onsemi)	STD150N3LLH6 (STMicroelectronics)	STD100N3LF3 (STMicroelectronics)	AOD514 (Alpha & Omega)	STD17NF03LT4 (STMicroelectronics)
Vdss (V)	30	30	30	30	30	30
Id @ Tc (A)	140	90	80	80	46	17
Rds On Max @ 10V (mOhm)	4.5 @ 15A	4.1 @ 45A	2.8 @ 40A	5.5 @ 40A	6.5 @ 20A	50 @ 8.5A
Vgs(th) Max @ 250µA (V)	2.3	2.2	2.5	2.5	2.6	2.2
Qg Max (nC)	50 @ 4.5V	14 @ 4.5V	29 @ 4.5V	27 @ 5V	22.5 @ 10V	6.5 @ 5V
Power Dissipation Max (W)	140	57	110	110	50	30
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)
Product Status	Not For New Designs	Active	Obsolete	Obsolete	Not For New Designs	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Full Current Replacement (90A+ Capability):

NVD4C05NT4G from onsemi provides the closest electrical performance match with 90A continuous drain current at Tc. This part carries Active product status and includes AEC-Q101 automotive qualification, supporting long-term availability and design confidence. The lower gate charge (14 nC) reduces switching losses compared to the original IRLR7833TRPBF. This substitute is suitable for applications where the full 140A capability is not required but high current handling and low on-resistance are essential.

Medium Current Replacement (80A Capability):

STD150N3LLH6 and STD100N3LF3, both from STMicroelectronics, deliver 80A continuous drain current at Tc with 110W power dissipation. STD150N3LLH6 features superior on-resistance (2.8 mOhm @ 40A, 10V) due to DeepGATE™ and STripFET™ VI technology. Both parts are designated Obsolete, indicating limited future availability. These substitutes are appropriate for applications requiring moderate current levels with optimized thermal performance.

Lower Current Replacement (17-46A Capability):

AOD514 from Alpha & Omega Semiconductor and STD17NF03LT4 from STMicroelectronics address lower current applications. STD17NF03LT4 maintains Active product status with 17A continuous drain current and significantly reduced gate charge (6.5 nC), making it suitable for low-power switching applications. AOD514 provides 46A capability with Not For New Designs status.

Compliance and Regulatory Considerations:

All listed substitutes maintain ROHS3 compliance and REACH Unaffected status, matching the original part's regulatory profile. NVD4C05NT4G includes AEC-Q101 automotive qualification, providing additional assurance for mission-critical applications.

Frequently Asked Questions (FAQ)

Q: Can NVD4C05NT4G directly replace IRLR7833TRPBF in all applications?

A: NVD4C05NT4G is electrically compatible within the TO-252-3 (DPAK) package and shares identical Vdss (30V) and operating temperature range. However, the continuous drain current is 90A versus 140A. Direct replacement is valid only if the application current requirement does not exceed 90A at Tc. The lower gate charge (14 nC vs. 50 nC) may improve switching performance in some circuits.

Q: What is the difference between Id @ Ta and Id @ Tc ratings?

A: Id @ Ta represents continuous drain current at ambient temperature (typically 25°C), while Id @ Tc represents the same parameter at case temperature. Tc ratings are more conservative and reflect thermal limitations of the package. For design purposes, use the Tc rating to ensure safe operation under worst-case thermal conditions.

Q: Are STD150N3LLH6 and STD100N3LF3 interchangeable?

A: Both parts share identical Vdss (30V), Id @ Tc (80A), power dissipation (110W), and DPAK package. The primary difference is on-resistance: STD150N3LLH6 features 2.8 mOhm (superior) versus STD100N3LF3 at 5.5 mOhm. Both are designated Obsolete, limiting future sourcing. Electrical substitution is valid, but availability constraints should be considered.

Q: Why does STD17NF03LT4 have such high on-resistance (50 mOhm)?

A: STD17NF03LT4 is designed for lower current applications (17A @ Tc) and uses a smaller die size to reduce cost and package size. The higher on-resistance is a trade-off inherent to this lower-current design. This part is suitable only for applications where 17A continuous current is sufficient.

Q: What does "Not For New Designs" status mean?

A: This designation indicates the manufacturer has superseded the part in their product portfolio. While existing inventory may be available, the manufacturer does not recommend using this part for new circuit designs. Parts with Active status (NVD4C05NT4G, STD17NF03LT4) are preferred for new designs due to guaranteed long-term availability and support.

Q: Can I use a substitute with lower gate charge to improve circuit performance?

A: Lower gate charge reduces the energy required to switch the MOSFET on and off, potentially reducing switching losses and heat generation. However, this substitution is valid only if all other electrical parameters (Vdss, Id, Rds On, operating temperature) meet or exceed application requirements. Verify gate drive circuit compatibility with the substitute part's threshold voltage and maximum gate voltage specifications.

Q: Are all these substitutes available in the same packaging options?

A: All listed substitutes are available in TO-252-3 (DPAK) surface mount configuration, matching the original IRLR7833TRPBF package. Packaging options such as Cut Tape (CT), Digi-Reel®, or Tape & Reel (TR) vary by supplier and distributor. Verify specific packaging availability with your component supplier before finalizing procurement.

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