IRLR3714Z N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR3714Z is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in the TO-252AA (DPAK) package. This device operates at 20V drain-to-source voltage with a continuous drain current rating of 37A at 25°C and maximum power dissipation of 35W. The IRLR3714Z is classified as obsolete product status, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity.

Substiute Parts

IRLR3714Z

Infineon TechnologiesIn Stock: 33001IRLR3714Z Datasheet

Current PartRFQ

IPD30N03S2L20ATMA1

Infineon TechnologiesIn Stock: 6096IPD30N03S2L20ATMA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRLR3714Z is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 20V rating
• Continuous Drain Current (Id): Substitute must support minimum 37A at 25°C
• On-State Resistance (Rds On): Substitute performance must not degrade circuit operation
• Gate Charge (Qg): Substitute characteristics must be compatible with existing gate drive circuitry
• Operating Temperature Range: Substitute must cover -55°C to 175°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package Type: TO-252-3 DPAK (2 Leads + Tab) footprint compatibility

The IPD30N03S2L20ATMA1 qualifies as a substitute based on these parameters. While the IPD30N03S2L20ATMA1 exhibits higher Vdss (30V) and different current/resistance characteristics, it maintains N-Channel topology, surface mount DPAK packaging, and compatible operating temperature range, enabling functional substitution in applications where the IRLR3714Z is no longer available.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IRLR3714Z is classified as obsolete. The IPD30N03S2L20ATMA1 maintains active product status with Infineon Technologies, ensuring ongoing availability, technical support, and manufacturing continuity.

Compliance and Certification: The IRLR3714Z is RoHS non-compliant. The IPD30N03S2L20ATMA1 is ROHS3 compliant, meeting current regulatory requirements for electronic component procurement in regulated industries and applications subject to RoHS directives.

Electrical Parameter Differences: The IPD30N03S2L20ATMA1 provides higher Vdss rating (30V versus 20V), enabling operation in circuits with higher voltage margins. The continuous drain current of the IPD30N03S2L20ATMA1 is 30A compared to 37A for the IRLR3714Z. On-state resistance is slightly higher (20 mOhm versus 15 mOhm), and gate charge is increased (19 nC versus 7.1 nC). Power dissipation capability is enhanced (60W versus 35W).

Mechanical Compatibility: Both devices utilize identical TO-252-3 DPAK surface mount packaging with 2 leads plus tab configuration, ensuring PCB footprint compatibility without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the IPD30N03S2L20ATMA1 directly replace the IRLR3714Z in existing designs?

A: The IPD30N03S2L20ATMA1 is mechanically compatible (identical DPAK package) and electrically compatible for N-Channel MOSFET applications. However, circuit performance differences exist due to higher Vdss (30V), lower continuous current rating (30A versus 37A), and increased on-state resistance (20 mOhm versus 15 mOhm). Design verification is required to confirm suitability for specific application requirements.

Q: What are the key electrical differences between these devices?

A: The IRLR3714Z operates at 20V Vdss with 37A continuous drain current and 15 mOhm on-state resistance. The IPD30N03S2L20ATMA1 operates at 30V Vdss with 30A continuous drain current and 20 mOhm on-state resistance. Gate charge is significantly higher in the substitute (19 nC versus 7.1 nC), affecting gate drive circuit requirements. Power dissipation capability is higher in the substitute (60W versus 35W).

Q: Are the packages identical?

A: Both devices use TO-252-3 DPAK (2 Leads + Tab) surface mount packaging, designated as SC-63. PCB footprints are identical, eliminating the need for layout modifications.

Q: What is the significance of the product status difference?

A: The IRLR3714Z is obsolete, indicating discontinued manufacturing and limited availability. The IPD30N03S2L20ATMA1 is active, ensuring ongoing production, technical support, and long-term supply chain reliability.

Q: Does the RoHS compliance difference affect substitution?

A: The IRLR3714Z is RoHS non-compliant while the IPD30N03S2L20ATMA1 is ROHS3 compliant. For applications subject to RoHS directives or procurement policies requiring RoHS compliance, the IPD30N03S2L20ATMA1 is the appropriate selection.

Q: How does increased gate charge affect circuit design?

A: The IPD30N03S2L20ATMA1 has gate charge of 19 nC compared to 7.1 nC for the IRLR3714Z. Higher gate charge requires greater gate drive current or longer switching times. Existing gate drive circuits must be evaluated to confirm adequate drive capability.

Q: What applications are suitable for the IPD30N03S2L20ATMA1 substitute?

A: The IPD30N03S2L20ATMA1 is suitable for N-Channel MOSFET applications operating at voltages up to 30V with continuous drain currents up to 30A. Applications include DC-DC converters, motor control, power switching, and general-purpose switching circuits where the IRLR3714Z was previously specified.