IRLR3714TRLPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR3714TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, classified as a HEXFET® series device. This surface mount transistor operates at 20V drain-to-source voltage with a continuous drain current rating of 36A at 25°C. The device is housed in a TO-252-3 DPAK package with integrated tab for thermal management.

The IRLR3714TRLPBF carries an Obsolete product status. Locating equivalent substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET topology.

Substiute Parts

IRLR3714TRLPBF
Infineon TechnologiesIn Stock: 881IRLR3714TRLPBF Datasheet
IRLR3714TRLPBF
Current Part
IPD30N03S2L20ATMA1
Infineon TechnologiesIn Stock: 6096IPD30N03S2L20ATMA1 Datasheet
IPD30N03S2L20ATMA1
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Continuous Drain Current (Id) @ 25°C 36 A (Tc)
On-State Resistance (Rds On Max) @ 18A, 10V 20 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 3 V
Gate Charge (Qg Max) @ 4.5V 9.7 nC
Power Dissipation (Max) 47 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-252-3 DPAK Surface Mount
Vgs (Max) ±20 V
Input Capacitance (Ciss Max) @ 10V 670 pF

Substitute Part Grouping Explanation

Substitution eligibility for the IRLR3714TRLPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss) rating must equal or exceed 20V
  • Continuous Drain Current (Id) must meet or exceed 36A at 25°C
  • On-State Resistance (Rds On) must not exceed 20mOhm at specified gate voltage and current conditions
  • Package type must be TO-252-3 DPAK (surface mount, 2 leads + tab)
  • Gate threshold voltage (Vgs(th)) must be compatible with existing drive circuitry
  • Operating temperature range must encompass -55°C to 175°C

Secondary Compatibility Parameters:

  • Gate charge (Qg) characteristics
  • Input capacitance (Ciss)
  • Maximum gate voltage (Vgs Max)
  • Power dissipation capability

The substitute part IPD30N03S2L20ATMA1 meets substitution criteria through equivalent or superior electrical performance within the allowed parameter envelope.

Parameter Comparison

Parameter IRLR3714TRLPBF IPD30N03S2L20ATMA1 Compatibility
Manufacturer Infineon Technologies Infineon Technologies Same
FET Type N-Channel N-Channel Compatible
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Compatible
Drain to Source Voltage (Vdss) 20V 30V Substitute rated higher
Continuous Drain Current (Id) @ 25°C 36A (Tc) 30A (Tc) Substitute rated lower
Rds On (Max) @ 18A, 10V 20mOhm 20mOhm Equivalent
Gate Threshold Voltage (Vgs(th) Max) @ Id 3V @ 250µA 2V @ 23µA Substitute lower threshold
Gate Charge (Qg Max) 9.7nC @ 4.5V 19nC @ 10V Substitute higher charge
Vgs (Max) ±20V ±20V Equivalent
Input Capacitance (Ciss Max) 670pF @ 10V 530pF @ 25V Substitute lower capacitance
Power Dissipation (Max) 47W (Tc) 60W (Tc) Substitute rated higher
Operating Temperature -55°C to 175°C (TJ) -55°C to 175°C (TJ) Equivalent
Package Type TO-252-3 DPAK TO-252-3 DPAK Equivalent
Mounting Type Surface Mount Surface Mount Compatible
Product Status Obsolete Active Substitute actively produced

Engineering Selection Recommendations

Substitution Feasibility:

The IPD30N03S2L20ATMA1 qualifies as a functional substitute for the IRLR3714TRLPBF based on the following engineering factors:

Electrical Compatibility:

  • Both devices share identical on-state resistance (Rds On) of 20mOhm at 18A, 10V gate voltage, ensuring equivalent conduction losses in switching applications
  • The substitute's 30V Vdss rating exceeds the original 20V requirement, providing additional voltage margin
  • Operating temperature range is identical across both devices (-55°C to 175°C)
  • Maximum gate voltage specification (±20V) is equivalent

Supply Chain Status:

  • The IRLR3714TRLPBF is classified as Obsolete, creating sourcing constraints
  • The IPD30N03S2L20ATMA1 maintains Active product status with 5988 units in current inventory, ensuring availability for production and replacement applications

Compliance and Certifications:

  • Both devices are REACH Unaffected and carry EAR99 ECCN classification
  • The substitute is RoHS3 Compliant
  • Both devices feature Moisture Sensitivity Level 1 (Unlimited)
  • Identical HTSUS classification (8541.29.0095)

Package Compatibility:

  • Both devices utilize TO-252-3 DPAK surface mount packaging with identical pinout and thermal tab configuration
  • No PCB layout modifications are required for direct substitution

Design Considerations: The substitute exhibits lower continuous drain current (30A versus 36A) and higher gate charge (19nC versus 9.7nC). Applications operating at or near the 36A maximum rating of the original device require verification that the 30A rating of the substitute remains adequate for the specific load profile. The increased gate charge may require adjustment to gate drive circuitry timing parameters in high-frequency switching applications.

Frequently Asked Questions (FAQ)

Q: Can the IPD30N03S2L20ATMA1 directly replace the IRLR3714TRLPBF in existing designs?

A: Direct pin-for-pin substitution is possible due to identical TO-252-3 DPAK packaging. However, design verification is required for applications where continuous drain current approaches or exceeds 30A, as the substitute is rated at 30A versus the original 36A. Gate drive timing should be evaluated due to the increased gate charge specification.

Q: What is the primary reason for seeking a substitute for the IRLR3714TRLPBF?

A: The IRLR3714TRLPBF carries an Obsolete product status, making it unavailable through standard distribution channels. The IPD30N03S2L20ATMA1 is an Active product with established supply chain availability.

Q: Are there electrical performance differences between these devices?

A: Both devices share identical on-state resistance (20mOhm @ 18A, 10V) and maximum gate voltage (±20V). The substitute provides higher voltage rating (30V versus 20V) and power dissipation capability (60W versus 47W). The substitute exhibits lower gate threshold voltage (2V versus 3V) and lower input capacitance (530pF versus 670pF), but higher gate charge (19nC versus 9.7nC).

Q: Is PCB layout modification necessary for substitution?

A: No. Both devices use identical TO-252-3 DPAK surface mount packaging with the same pinout and thermal tab configuration. Existing PCB layouts require no modification for mechanical compatibility.

Q: What compliance certifications apply to the substitute part?

A: The IPD30N03S2L20ATMA1 is RoHS3 Compliant, REACH Unaffected, and carries EAR99 ECCN classification. Moisture Sensitivity Level is 1 (Unlimited). These specifications match or exceed the original device certifications.

Q: How does the gate charge difference affect circuit design?

A: The substitute exhibits approximately double the gate charge (19nC versus 9.7nC). In high-frequency switching applications, this may require increased gate drive current or extended switching time. Gate drive circuit parameters should be evaluated to ensure adequate charge delivery within the required switching window.

Q: What is the inventory status of each device?

A: The IRLR3714TRLPBF (Obsolete) has 852 units in stock. The IPD30N03S2L20ATMA1 (Active) has 5988 units in current inventory, providing superior long-term supply chain availability.

Q: Are there applications where the substitute is not suitable?

A: Applications requiring continuous drain current exceeding 30A at 25°C should not use the substitute without thermal management analysis. The lower current rating may result in thermal stress if the original design operated consistently near the 36A maximum of the IRLR3714TRLPBF.

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