IRLR3714 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR3714 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 20V drain-to-source voltage with 36A continuous drain current in a surface mount DPAK package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The HEXFET® series device operates across a wide temperature range from -55°C to 175°C and is suitable for switching applications requiring moderate voltage ratings and high current handling in compact form factors.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	36	A
On-State Resistance (Rds On) @ 18A, 10V	20	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Power Dissipation (Max)	47	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252-3 DPAK	—
Mounting Type	Surface Mount	—
FET Channel Type	N-Channel	—

Substitute Part Grouping Explanation

Substitution of the IRLR3714 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET channel type must be N-Channel
Package must be TO-252-3 DPAK (surface mount, same footprint)
Drain-to-source voltage (Vdss) must be equal to or greater than 20V
Continuous drain current (Id) must be equal to or greater than 36A
On-state resistance (Rds On) must not exceed 20 mOhm at specified gate voltage
Operating temperature range must encompass -55°C to 175°C
Mounting type must be surface mount

Secondary Compatibility Parameters:

Gate threshold voltage (Vgs(th)) within ±20V maximum gate voltage specification
Gate charge (Qg) and input capacitance (Ciss) for circuit timing considerations
Power dissipation capability must support application requirements

Substitutes are grouped based on whether they meet all primary criteria while maintaining electrical performance within acceptable tolerances for the application.

Parameter Comparison

Parameter	IRLR3714 (Main)	IPD30N03S2L20ATMA1	STD35NF3LLT4	STD26P3LLH6
Manufacturer	Infineon	Infineon	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	P-Channel
Vdss (V)	20	30	30	30
Id @ 25°C (A)	36	30	35	12
Rds On @ 10V (mOhm)	20 @ 18A	20 @ 18A	19.5 @ 17.5A	30 @ 6A
Vgs(th) (V)	3 @ 250µA	2 @ 23µA	2.5 @ 250µA	2.5 @ 250µA
Power Dissipation (W)	47	60	50	40
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	to 175
Package	TO-252-3 DPAK	PG-TO252-3-11	TO-252-3 DPAK	TO-252-3 DPAK
Product Status	Obsolete	Active	Obsolete	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IPD30N03S2L20ATMA1 (Infineon OptiMOS™)

This N-Channel MOSFET from Infineon provides direct functional equivalence to the IRLR3714. The device features a higher Vdss rating of 30V, which provides additional voltage margin while maintaining identical on-state resistance of 20 mOhm at 10V gate voltage. The continuous drain current of 30A is slightly lower than the original 36A specification; however, the increased power dissipation capability (60W versus 47W) and active product status make this the primary recommended substitute. The OptiMOS™ series offers improved thermal performance and is ROHS3 compliant, addressing environmental compliance requirements. Packaging is functionally equivalent (PG-TO252-3-11 variant of TO-252-3 DPAK).

STD35NF3LLT4 (STMicroelectronics STripFET™ II)

This N-Channel MOSFET from STMicroelectronics meets the primary substitution criteria with 30V Vdss, 35A continuous drain current, and 19.5 mOhm on-state resistance. The device maintains the same operating temperature range and DPAK package footprint. However, this part is classified as obsolete, limiting its long-term availability. The STripFET™ II series provides comparable electrical performance with slightly lower gate charge (17 nC versus 9.7 nC), which may affect circuit switching characteristics. ROHS3 compliance is confirmed.

STD26P3LLH6 (STMicroelectronics DeepGATE™/STripFET™ VI)

This substitute is a P-Channel MOSFET and is not electrically equivalent to the N-Channel IRLR3714. The opposite channel polarity fundamentally changes circuit operation and requires complete redesign of gate drive and switching logic. This part is listed in the original substitute field but does not meet the primary N-Channel requirement and should not be selected for direct substitution.

Recommendation Priority:

IPD30N03S2L20ATMA1 — Active status, full compliance, equivalent performance
STD35NF3LLT4 — Equivalent performance, obsolete status limits availability

Frequently Asked Questions (FAQ)

Q: Can the IPD30N03S2L20ATMA1 directly replace the IRLR3714 without circuit modification?

A: The IPD30N03S2L20ATMA1 is electrically compatible for most applications. Both devices share identical on-state resistance (20 mOhm @ 10V), the same operating temperature range (-55°C to 175°C), and compatible DPAK packaging. The higher Vdss rating (30V versus 20V) provides additional voltage margin. The continuous drain current is 30A versus 36A; verify that your application does not require the full 36A specification. Gate threshold voltage differs slightly (2V versus 3V), which may affect gate drive timing but remains within acceptable operating margins for standard gate drive circuits.

Q: Why is STD26P3LLH6 listed as a substitute if it is P-Channel?

A: STD26P3LLH6 is a P-Channel device and is not a functional substitute for the N-Channel IRLR3714. The opposite channel polarity requires fundamentally different circuit topology and gate drive implementation. This part should not be selected for direct replacement applications.

Q: What is the significance of the "Obsolete" product status for IRLR3714 and STD35NF3LLT4?

A: Obsolete status indicates that the manufacturer has discontinued production and support. For the IRLR3714, this necessitates finding active alternatives for new designs and ongoing procurement. The IPD30N03S2L20ATMA1 is the recommended choice due to its active status, ensuring continued availability and manufacturer support. STD35NF3LLT4, while electrically suitable, carries the same obsolescence risk.

Q: Are there thermal performance differences between the main part and substitutes?

A: The IPD30N03S2L20ATMA1 offers higher power dissipation capability (60W versus 47W), indicating improved thermal performance. The STD35NF3LLT4 provides 50W dissipation. Both substitutes can handle thermal loads equal to or exceeding the original IRLR3714 specification. Verify that your PCB thermal design and heatsinking approach remain adequate for the selected substitute.

Q: Does the package designation difference (TO-252-3 DPAK versus PG-TO252-3-11) affect PCB compatibility?

A: Both designations refer to the same physical DPAK package footprint (TO-252-3). The PG-TO252-3-11 designation is a manufacturer-specific variant identifier used by Infineon. PCB footprints designed for standard TO-252-3 DPAK will accommodate the IPD30N03S2L20ATMA1 without modification.

Q: What is the impact of RoHS compliance differences?

A: The IRLR3714 is RoHS non-compliant, while both active substitutes (IPD30N03S2L20ATMA1 and STD26P3LLH6) are ROHS3 compliant. If your application or supply chain requires RoHS compliance, the IPD30N03S2L20ATMA1 is the appropriate selection. RoHS compliance affects material composition and environmental impact but does not alter electrical performance.

Q: How do gate charge differences affect circuit design?

A: The IRLR3714 has gate charge of 9.7 nC @ 4.5V, while the IPD30N03S2L20ATMA1 has 19 nC @ 10V. Higher gate charge requires more current from the gate drive circuit to achieve the same switching speed. Verify that your gate driver can supply sufficient current to meet switching frequency requirements. The STD35NF3LLT4 has lower gate charge (17 nC @ 5V), which may provide faster switching characteristics.

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