IRLR3110ZPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR3110ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 42A continuous drain current at 25°C. This device is part of the HEXFET® series and is housed in a TO-252-3 (DPAK) surface mount package. The part is currently discontinued at DiGi Electronics, making identification of equivalent and substitute components essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and availability constraints.

Substiute Parts

IRLR3110ZPBF

Infineon TechnologiesIn Stock: 1456IRLR3110ZPBF Datasheet

Current PartRFQ

IPD35N10S3L26ATMA1

Infineon TechnologiesIn Stock: 8580IPD35N10S3L26ATMA1 Datasheet

MFR RecommendedRFQ

IRF1310NSTRLPBF

Infineon TechnologiesIn Stock: 6437IRF1310NSTRLPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRLR3110ZPBF is determined by the following critical parameters:

Primary Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
• Continuous Drain Current (Id): Must meet or exceed 42A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must be compatible with 2.5V maximum specification
• Maximum Gate Voltage (Vgs): Must accommodate ±16V or higher
• Operating Temperature Range: Must span -55°C to 175°C (TJ)
• FET Type: N-Channel MOSFET technology only
• RoHS and REACH Compliance: ROHS3 Compliant and REACH Unaffected status required

Secondary Considerations:

• On-state resistance (Rds On) at specified conditions
• Power dissipation capability
• Package compatibility (surface mount, TO-252 family)
• Moisture sensitivity level (MSL 1 or equivalent)

The two substitute parts identified meet these criteria with the following distinctions:

IPD35N10S3L26ATMA1: Meets voltage and temperature requirements with 35A continuous drain current (below the 42A specification). Offers lower on-state resistance (24mOhm vs. 14mOhm) and reduced power dissipation (71W vs. 140W). Suitable for applications where current demand does not exceed 35A.

IRF1310NSTRLPBF: Matches the 42A continuous drain current specification exactly. Provides equivalent voltage and temperature ratings. Higher on-state resistance (36mOhm vs. 14mOhm) and increased power dissipation (160W vs. 140W). Packaged in D2PAK (TO-263-3) instead of DPAK, requiring PCB layout modification.

Parameter Comparison

Engineering Selection Recommendations

For Direct Replacement (Same Package, Same Current Rating):

The IRF1310NSTRLPBF is the only substitute that maintains the 42A continuous drain current specification of the IRLR3110ZPBF. However, this part requires a package change from TO-252-3 (DPAK) to TO-263-3 (D2PAK), necessitating PCB layout modification. Both parts are manufactured by Infineon Technologies, carry active product status, and maintain full ROHS3 compliance and REACH unaffected status. The IRF1310NSTRLPBF exhibits higher on-state resistance (36mOhm vs. 14mOhm) and increased power dissipation (160W vs. 140W), which must be evaluated against thermal management capabilities in the target application.

For Current-Reduced Applications (Same Package, Lower Current):

The IPD35N10S3L26ATMA1 maintains the TO-252-3 package footprint, eliminating PCB redesign requirements. This part is suitable only for applications where continuous drain current does not exceed 35A. The IPD35N10S3L26ATMA1 offers superior on-state resistance characteristics (24mOhm vs. 14mOhm) and lower power dissipation (71W vs. 140W), providing thermal advantages in current-limited designs. This part carries active product status with full ROHS3 compliance and REACH unaffected status.

Compliance and Availability:

All three parts maintain identical operating temperature ranges (-55°C to 175°C TJ), MSL ratings (1 - Unlimited), and regulatory compliance status. The IRLR3110ZPBF discontinuation status necessitates transition to either substitute. Current inventory availability favors the IPD35N10S3L26ATMA1 (8550 pcs) and IRF1310NSTRLPBF (6371 pcs), both significantly exceeding the original part's remaining stock (1396 pcs).

Frequently Asked Questions (FAQ)

Q: Can the IPD35N10S3L26ATMA1 be used as a direct replacement for the IRLR3110ZPBF?

A: The IPD35N10S3L26ATMA1 is electrically compatible with the IRLR3110ZPBF for voltage and temperature specifications. However, the continuous drain current rating is 35A versus the original 42A specification. This substitute is suitable only for applications where the maximum required drain current does not exceed 35A. The TO-252-3 package compatibility eliminates PCB redesign requirements.

Q: What are the key differences between the IRF1310NSTRLPBF and the IRLR3110ZPBF?

A: The IRF1310NSTRLPBF matches the 42A continuous drain current and 100V voltage rating of the IRLR3110ZPBF. Primary differences include: (1) Package change from TO-252-3 (DPAK) to TO-263-3 (D2PAK), requiring PCB layout modification; (2) On-state resistance increases from 14mOhm to 36mOhm at 10V gate voltage; (3) Power dissipation increases from 140W to 160W; (4) Gate threshold voltage increases from 2.5V to 4.0V maximum. All voltage, current, and temperature specifications remain compatible.

Q: Why does the IRLR3110ZPBF show higher on-state resistance (14mOhm) compared to the IPD35N10S3L26ATMA1 (24mOhm) despite being the original part?

A: On-state resistance specifications are measured at different drain current levels. The IRLR3110ZPBF specifies Rds On at 38A and 10V gate voltage, while the IPD35N10S3L26ATMA1 specifies Rds On at 35A and 10V gate voltage. Lower measurement current typically results in lower on-state resistance values. Both specifications are valid within their respective operating conditions.

Q: Are package changes between DPAK and D2PAK significant for PCB design?

A: Yes. The DPAK (TO-252-3) and D2PAK (TO-263-3) packages have different pin configurations, lead spacing, and thermal pad dimensions. Substituting the IRF1310NSTRLPBF for the IRLR3110ZPBF requires complete PCB footprint redesign. The IPD35N10S3L26ATMA1 maintains the DPAK package, allowing direct footprint compatibility without layout modification.

Q: Do all three parts meet current regulatory compliance requirements?

A: Yes. The IRLR3110ZPBF, IPD35N10S3L26ATMA1, and IRF1310NSTRLPBF all carry ROHS3 compliance and REACH unaffected status. All three parts maintain MSL rating 1 (Unlimited moisture sensitivity level). Regulatory compliance is equivalent across all three devices.

Q: What is the impact of the higher gate threshold voltage (4.0V) in the IRF1310NSTRLPBF compared to the IRLR3110ZPBF (2.5V)?

A: The gate threshold voltage difference affects gate drive circuit design. The IRF1310NSTRLPBF requires higher gate voltage to achieve full on-state conduction compared to the IRLR3110ZPBF. Existing gate drive circuits designed for 2.5V threshold may require adjustment to ensure adequate gate voltage margin (typically 2-3V above threshold) for reliable switching performance with the IRF1310NSTRLPBF.

Q: Which substitute part should be selected for a new design?

A: Selection depends on application current requirements and PCB design constraints. For applications requiring 42A continuous drain current with PCB redesign capability, select the IRF1310NSTRLPBF. For applications with maximum current requirements of 35A or less, select the IPD35N10S3L26ATMA1 to maintain existing DPAK footprint compatibility and benefit from improved thermal characteristics. Both parts carry active product status and superior inventory availability compared to the discontinued IRLR3110ZPBF.