IRLR3105TRLPBF N-Channel 55V 25A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR3105TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, part of the HEXFET® series. This device features a 55V drain-to-source voltage rating with 25A continuous drain current capability in a surface mount TO-252-3 (DPAK) package. The part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts are selected based on compatible electrical parameters, mechanical packaging, and operational characteristics within defined tolerance ranges.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	25	A
On-State Resistance (Rds On) @ 15A, 10V	37	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 5V	20	nC
Power Dissipation (Max)	57	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252-3 (DPAK)
Mounting Type	Surface Mount

Substitute Part Grouping Explanation

Substitute parts for the IRLR3105TRLPBF are categorized into two groups based on substitution criteria:

Group 1: Parametric Equivalent Parts that maintain identical or near-identical electrical specifications and can serve as direct replacements without circuit modification. The primary criterion is matching Vdss (55V), Id (25A), and Rds On characteristics within acceptable engineering tolerances.

Group 2: Manufacturer Recommended Substitutes Parts with enhanced or modified electrical parameters that provide functional equivalence through superior performance characteristics. These parts may feature higher voltage ratings, increased current capacity, or improved on-state resistance, allowing operation in the original circuit with maintained or improved performance margins.

Key Parameters Determining Substitution Eligibility:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Continuous Drain Current (Id): Must equal or exceed 25A at 25°C
Package Type: Must be TO-252-3 (DPAK) surface mount
Operating Temperature Range: Must span -55°C to 175°C minimum
Gate Drive Voltage: Compatible with 5V or 10V drive levels
RoHS3 Compliance: Required for regulatory alignment

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss. (W)	Status
IRLR3105TRLPBF	Infineon	55	25	37 @ 15A, 10V	3 @ 250µA	20 @ 5V	57	Discontinued
IRLR3105TRPBF	Infineon	55	25	37 @ 15A, 10V	3 @ 250µA	20 @ 5V	57	Active
IPD30N10S3L34ATMA1	Infineon	100	30	31 @ 30A, 10V	2.4 @ 29µA	31 @ 10V	57	Active
IPD350N06LGBTMA1	Infineon	60	29	35 @ 29A, 10V	2 @ 28µA	13 @ 5V	68	Active
IPD35N10S3L26ATMA1	Infineon	100	35	24 @ 35A, 10V	2.4 @ 39µA	39 @ 10V	71	Active
NTD24N06LT4G	onsemi	60	24	45 @ 10A, 5V	2 @ 250µA	32 @ 5V	62.5	Active
STD15NF10T4	STMicroelectronics	100	23	65 @ 12A, 10V	4 @ 250µA	40 @ 10V	70	Active
STD20NF06LT4	STMicroelectronics	60	24	40 @ 12A, 10V	2.5 @ 250µA	13 @ 10V	60	Active
STD20NF06T4	STMicroelectronics	60	24	40 @ 12A, 10V	4 @ 250µA	31 @ 10V	60	Active
STD25NF10LT4	STMicroelectronics	100	25	35 @ 12.5A, 10V	2.5 @ 250µA	52 @ 5V	100	Active
STD25NF10T4	STMicroelectronics	100	25	38 @ 12.5A, 10V	4 @ 250µA	55 @ 10V	100	Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

IRLR3105TRPBF is the active equivalent of the discontinued IRLR3105TRLPBF. Both parts share identical electrical specifications, gate drive characteristics, and thermal performance. This part maintains HEXFET® series designation and is suitable for direct substitution without circuit redesign. RoHS3 compliance and MSL 1 rating are maintained.

Manufacturer Recommended Substitutes (Enhanced Performance):

For 55V to 100V Voltage Margin Applications:

STD25NF10T4 and STD25NF10LT4 (STMicroelectronics STripFET™ II series) provide 100V Vdss rating with 25A continuous drain current, matching the original part's current specification. Both maintain TO-252-3 DPAK packaging and surface mount configuration. STD25NF10LT4 features lower Rds On (35 mOhm) compared to the original (37 mOhm), providing improved efficiency. STD25NF10T4 offers higher gate threshold voltage (4V) for enhanced noise immunity. Power dissipation increases to 100W, providing thermal margin. High inventory availability (688,200 and 1,000,100 units respectively) ensures supply continuity.

IPD30N10S3L34ATMA1 (Infineon OptiMOS™) delivers 100V Vdss with 30A continuous drain current, exceeding original specifications. Rds On of 31 mOhm at 30A, 10V represents 16% improvement over the original part. Gate threshold voltage of 2.4V enables lower drive voltage operation. Maintained 57W power dissipation matches the original design. Active product status with 20,100 units in stock.

IPD35N10S3L26ATMA1 (Infineon OptiMOS™) provides 100V Vdss with 35A continuous drain current and superior Rds On of 24 mOhm at 35A, 10V. This represents 35% improvement in on-state resistance. Power dissipation of 71W provides thermal headroom. Gate threshold voltage of 2.4V supports lower drive voltage requirements. Active status with 8,550 units available.

For 55V to 60V Voltage Margin Applications:

IPD350N06LGBTMA1 (Infineon OptiMOS™) offers 60V Vdss with 29A continuous drain current. Rds On of 35 mOhm at 29A, 10V closely matches the original specification. Gate threshold voltage of 2V enables efficient low-voltage drive. Power dissipation of 68W exceeds the original 57W. Active status with 6,450 units in stock.

STD20NF06LT4 and STD20NF06T4 (STMicroelectronics STripFET™ II) provide 60V Vdss with 24A continuous drain current. Both maintain Rds On of 40 mOhm at 12A, 10V. STD20NF06LT4 features 2.5V gate threshold voltage for lower drive requirements, while STD20NF06T4 provides 4V threshold for noise immunity. Power dissipation of 60W provides thermal margin. STD20NF06T4 offers exceptional inventory (27,055 units).

NTD24N06LT4G (onsemi) delivers 60V Vdss with 24A continuous drain current in DPAK package. Rds On of 45 mOhm at 10A, 5V represents higher on-state resistance but supports 5V gate drive operation. Power dissipation of 62.5W provides thermal margin. Active status with 16,289 units available.

For Higher Current Margin Applications:

STD15NF10T4 (STMicroelectronics STripFET™ II) provides 100V Vdss with 23A continuous drain current. While current rating is slightly below the original 25A, the 100V voltage rating provides enhanced margin. Rds On of 65 mOhm at 12A, 10V is higher than the original specification. Power dissipation of 70W provides thermal headroom. Active status with 15,300 units in stock.

All substitute parts maintain TO-252-3 (DPAK) surface mount packaging, -55°C to 175°C operating temperature range, RoHS3 compliance, and MSL 1 moisture sensitivity rating. Selection should be based on specific circuit requirements for voltage margin, current capacity, on-state resistance, and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can IRLR3105TRPBF directly replace IRLR3105TRLPBF without any circuit modifications?

A: Yes. IRLR3105TRPBF is the active parametric equivalent with identical electrical specifications, gate drive characteristics, and thermal performance. Both parts are Infineon HEXFET® series devices with matching Vdss (55V), Id (25A), Rds On (37 mOhm), and power dissipation (57W). Direct substitution is supported without circuit redesign.

Q: What is the primary difference between the Infineon OptiMOS™ substitutes and the original HEXFET® part?

A: OptiMOS™ series parts feature enhanced on-state resistance and lower gate threshold voltage compared to HEXFET® devices. IPD30N10S3L34ATMA1 and IPD35N10S3L26ATMA1 provide superior Rds On performance (31 mOhm and 24 mOhm respectively versus 37 mOhm original), enabling improved efficiency and reduced power dissipation in switching applications. Gate threshold voltages of 2.4V support lower drive voltage operation.

Q: Are all substitute parts available in the same TO-252-3 (DPAK) package?

A: Yes. All listed substitute parts are packaged in TO-252-3 (DPAK) surface mount configuration, maintaining mechanical and thermal interface compatibility with the original IRLR3105TRLPBF design. PCB layout and thermal management considerations remain unchanged.

Q: Which substitute part offers the best on-state resistance performance?

A: IPD35N10S3L26ATMA1 provides the lowest Rds On at 24 mOhm (measured at 35A, 10V), representing 35% improvement over the original 37 mOhm specification. This reduces conduction losses and heat generation in high-current switching applications. IPD30N10S3L34ATMA1 offers 31 mOhm (16% improvement) as an alternative with higher current capacity.

Q: Can I use a 100V rated substitute in a 55V circuit?

A: Yes. Parts with higher Vdss ratings (100V) operate safely in 55V circuits, providing enhanced voltage margin and overvoltage protection. STD25NF10T4, STD25NF10LT4, IPD30N10S3L34ATMA1, and IPD35N10S3L26ATMA1 all support 100V operation and are suitable for 55V applications. This approach is beneficial for circuits with transient voltage spikes or future design upgrades.

Q: What is the significance of gate threshold voltage differences between substitutes?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate-source voltage required to turn the device on. Original IRLR3105TRLPBF specifies 3V at 250µA. Lower threshold voltage substitutes (2V to 2.5V) enable operation with reduced gate drive voltage, improving efficiency in low-voltage gate driver circuits. Higher threshold voltage parts (4V) provide enhanced noise immunity in noisy environments. Selection depends on gate driver capability and circuit noise characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the original IRLR3105TRLPBF specifications. This ensures regulatory alignment for commercial and industrial applications.

Q: Which substitute offers the highest inventory availability?

A: STD25NF10T4 (STMicroelectronics) provides the highest inventory with 1,000,100 units in stock, followed by STD25NF10LT4 with 688,200 units. Both parts offer 100V Vdss with 25A continuous drain current and are suitable for long-term production requirements.

Q: How do I select between STD20NF06LT4 and STD20NF06T4?

A: Both parts provide identical electrical performance (60V Vdss, 24A Id, 40 mOhm Rds On). The primary difference is gate threshold voltage: STD20NF06LT4 features 2.5V for lower drive voltage operation, while STD20NF06T4 provides 4V for enhanced noise immunity. STD20NF06T4 offers significantly higher inventory (27,055 units). Selection depends on gate driver voltage capability and circuit noise environment.

Q: Can I use NTD24N06LT4G (onsemi) as a substitute?

A: NTD24N06LT4G is a viable substitute for 60V applications with 24A continuous drain current. However, Rds On of 45 mOhm is higher than the original 37 mOhm, resulting in increased conduction losses. This part is suitable when voltage margin to 60V is acceptable and higher on-state resistance is tolerable. The 5V gate drive specification supports standard gate driver circuits.

Q: What thermal considerations apply when selecting substitute parts?

A: Power dissipation ratings vary among substitutes. Original IRLR3105TRLPBF specifies 57W. Substitutes range from 57W (IPD30N10S3L34ATMA1) to 100W (STD25NF10LT4, STD25NF10T4). Higher power dissipation ratings provide thermal margin but require adequate PCB copper area and thermal management. Lower Rds On substitutes (IPD35N10S3L26ATMA1 at 24 mOhm) reduce actual power dissipation in switching applications despite higher rated values.

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