IRLR3105PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR3105PBF is an N-Channel MOSFET manufactured by Infineon Technologies, part of the HEXFET® series. This device is rated for 55V drain-to-source voltage with 25A continuous drain current and 57W power dissipation. The component is housed in a TO-252-3 (DPAK) surface mount package with two leads plus tab configuration.

The IRLR3105PBF has been discontinued at DiGi Electronics. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute devices must maintain electrical compatibility within the application's voltage, current, and thermal operating parameters while preserving the same physical package footprint.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	25	A (Tc)
On-Resistance (Rds On) @ 15A, 10V	37	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Power Dissipation (Max)	57	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRLR3105PBF is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Substitute devices must equal or exceed 55V
Continuous Drain Current (Id): Substitute devices must equal or exceed 25A at 25°C
On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuitry
Power Dissipation: Must support the thermal requirements of the application
Operating Temperature Range: Must encompass -55°C to 175°C

Mechanical Compatibility Criteria:

Package Type: All substitutes must use TO-252-3 (DPAK) surface mount configuration
Lead Configuration: Two leads plus tab structure required
Mounting Type: Surface mount only

Substitute parts are grouped into two categories based on voltage rating:

Category 1 – 55V to 60V Rated Devices: Direct voltage-class substitutes with equivalent or superior current handling. These devices maintain the original voltage specification or operate within a narrow margin above it.

Category 2 – 100V Rated Devices: Higher voltage-rated alternatives suitable for applications where increased voltage headroom is acceptable. These devices provide enhanced overvoltage protection while maintaining or exceeding current and power dissipation specifications.

Parameter Comparison

Parameter	IRLR3105PBF	STD20NF06LT4	STD20NF06T4	NTD24N06LT4G	STD25NF10LT4	STD25NF10T4	IPD30N10S3L34ATMA1	IPD350N06LGBTMA1	IPD35N10S3L26ATMA1	STD15NF10T4	NTD5867NLT4G
Manufacturer	Infineon	STMicroelectronics	STMicroelectronics	onsemi	STMicroelectronics	STMicroelectronics	Infineon	Infineon	Infineon	STMicroelectronics	onsemi
Vdss (V)	55	60	60	60	100	100	100	60	100	100	60
Id @ 25°C (A)	25	24	24	24	25	25	30	29	35	23	20
Rds On (mOhm)	37 @ 15A, 10V	40 @ 12A, 10V	40 @ 12A, 10V	45 @ 10A, 5V	35 @ 12.5A, 10V	38 @ 12.5A, 10V	31 @ 30A, 10V	35 @ 29A, 10V	24 @ 35A, 10V	65 @ 12A, 10V	39 @ 10A, 10V
Vgs(th) (V)	3 @ 250µA	2.5 @ 250µA	4 @ 250µA	2 @ 250µA	2.5 @ 250µA	4 @ 250µA	2.4 @ 29µA	2 @ 28µA	2.4 @ 39µA	4 @ 250µA	2.5 @ 250µA
Power Dissipation (W)	57	60	60	62.5	100	100	57	68	71	70	36
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 150
Package	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)
Product Status	Discontinued	Active	Active	Active	Active	Active	Active	Active	Active	Active	Obsolete
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

STD25NF10LT4 and STD25NF10T4 (STMicroelectronics STripFET™ II series) are the most suitable direct replacements. Both devices maintain the 25A continuous drain current specification and are rated for 100V, providing enhanced voltage margin over the original 55V specification. These parts are in active production status with high inventory availability (688,200 and 1,000,100 units respectively). Both comply with ROHS3 and maintain the full -55°C to 175°C operating temperature range. The primary difference between these variants is gate threshold voltage specification (2.5V for LT4 versus 4V for T4), which affects gate drive requirements.

Secondary Substitutes (Voltage-Class Alternatives):

STD20NF06LT4 and STD20NF06T4 (STMicroelectronics STripFET™ II series) operate at 60V, maintaining closer voltage alignment to the original 55V specification. Both support 24A continuous drain current with 60W power dissipation. These devices are active production parts with good inventory availability (2,220 and 27,055 units respectively). Gate threshold voltage variants are available (2.5V for LT4 versus 4V for T4).

NTD24N06LT4G (onsemi) provides 60V, 24A operation in active production status with 16,289 units in stock. This device offers an alternative sourcing option within the 60V voltage class.

Higher Current Alternatives (Enhanced Performance):

IPD30N10S3L34ATMA1 (Infineon OptiMOS™) delivers 30A at 100V with superior on-resistance (31 mOhm) and maintains 57W power dissipation. This device is in active production with 20,100 units available.

IPD35N10S3L26ATMA1 (Infineon OptiMOS™) provides the highest current rating at 35A with 100V rating and lowest on-resistance (24 mOhm) among all substitutes, with 71W power dissipation. This device is in active production with 8,550 units available.

IPD350N06LGBTMA1 (Infineon OptiMOS™) operates at 60V with 29A current and 68W power dissipation, offering enhanced thermal performance. This device is in active production with 6,450 units available.

Not Recommended:

NTD5867NLT4G (onsemi) is marked as obsolete and has a reduced operating temperature range (-55°C to 150°C), which does not encompass the full 175°C upper limit of the original device. This part should not be selected for new designs.

STD15NF10T4 (STMicroelectronics) is rated for only 23A continuous drain current, which falls below the 25A requirement of the original device. This part is unsuitable for direct replacement.

All recommended substitutes are ROHS3 compliant, REACH unaffected, and classified as EAR99 for export control purposes.

Frequently Asked Questions (FAQ)

Q: Can I use a 100V-rated MOSFET as a substitute for the 55V IRLR3105PBF?

A: Yes. Higher voltage-rated devices such as STD25NF10LT4, STD25NF10T4, IPD30N10S3L34ATMA1, and IPD35N10S3L26ATMA1 are suitable substitutes. The 100V rating provides additional overvoltage protection margin while maintaining or exceeding the current and power dissipation specifications. The application circuit must accommodate the different gate threshold voltage if applicable.

Q: What is the difference between STD25NF10LT4 and STD25NF10T4?

A: Both devices are identical in electrical performance except for gate threshold voltage specification. STD25NF10LT4 has Vgs(th) of 2.5V at 250µA, while STD25NF10T4 has Vgs(th) of 4V at 250µA. The gate drive circuit must be compatible with the selected threshold voltage. Both devices maintain 25A continuous drain current and 100V rating.

Q: Are all substitute parts in the same physical package?

A: Yes. All substitute parts listed use the TO-252-3 (DPAK) surface mount package with two leads plus tab configuration. This ensures mechanical compatibility with existing PCB layouts and soldering processes without modification.

Q: Why is NTD5867NLT4G not recommended?

A: NTD5867NLT4G is marked as obsolete and has a maximum operating temperature of 150°C, which does not meet the -55°C to 175°C requirement of the original IRLR3105PBF. Additionally, the 20A continuous drain current rating is below the 25A specification of the original device.

Q: What is the advantage of IPD35N10S3L26ATMA1 over other substitutes?

A: IPD35N10S3L26ATMA1 provides the highest continuous drain current (35A) and the lowest on-resistance (24 mOhm at 35A, 10V) among all substitutes. This device delivers superior thermal performance and current handling capability, making it suitable for applications requiring enhanced margin or higher current density.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, meeting environmental and regulatory requirements equivalent to the original IRLR3105PBF.

Q: Can I use STD20NF06LT4 or STD20NF06T4 as substitutes?

A: Yes, with consideration. These devices operate at 60V with 24A continuous drain current, which is very close to the original specification. However, the 24A rating is slightly below the 25A requirement. These parts are suitable for applications where the 1A margin is acceptable or where the actual operating current is below 24A.

Q: What inventory availability should I expect for substitute parts?

A: STD25NF10T4 has the highest availability with 1,000,100 units in stock. STD25NF10LT4 has 688,200 units available. Other active production substitutes have inventory ranging from 2,220 to 35,200 units. Availability should be verified with the supplier for current production requirements.

Q: Do all substitute parts support the full -55°C to 175°C operating temperature range?

A: All recommended substitutes support the full -55°C to 175°C operating temperature range except NTD5867NLT4G, which is limited to -55°C to 150°C. This is one reason NTD5867NLT4G is not recommended for replacement applications.

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