IRLR2905PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR2905PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 42A continuous drain current at 25°C. This device is packaged in TO-252-3 (DPAK) surface mount configuration and belongs to the HEXFET® series. The part is currently classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing design support and production continuity. Substitute parts must maintain compatibility with the TO-252-3 package footprint and deliver equivalent electrical performance within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	42	A (Tc)
On-Resistance (Rds On) @ 25A, 10V	27	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Power Dissipation (Max)	110	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the IRLR2905PBF are evaluated based on the following critical electrical and mechanical parameters:

Primary Compatibility Criteria:

Package Type: TO-252-3 (DPAK) surface mount configuration
FET Type: N-Channel MOSFET
Technology: Metal Oxide Semiconductor (MOSFET)
Operating Temperature Range: -55°C to 175°C (TJ)
RoHS3 Compliance and MSL Level 1 (Unlimited)

Electrical Performance Parameters:

Drain-to-Source Voltage (Vdss): 55V or higher
Continuous Drain Current (Id): 42A or higher at 25°C
On-Resistance (Rds On): 27mOhm or lower at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within ±2V of original specification
Power Dissipation: 110W or higher

Substitute parts are grouped into two categories: direct replacements maintaining identical voltage and current ratings, and functional equivalents with enhanced voltage ratings or current capacity that operate within the same thermal and package constraints.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Power Diss. (W)	Package	Status
IRLR2905PBF	Infineon	55	42	27 @ 25A, 10V	2 @ 250µA	110	TO-252-3	Obsolete
HUF75329D3ST	onsemi	55	20	26 @ 20A, 10V	4 @ 250µA	128	TO-252-3	Active
FDD13AN06A0	onsemi	60	50	13.5 @ 50A, 10V	4 @ 250µA	115	TO-252-3	Active
FDD13AN06A0-F085	onsemi	60	50	13.5 @ 50A, 10V	4 @ 250µA	115	TO-252-3	Active
STD20NF06LT4	STMicroelectronics	60	24	40 @ 12A, 10V	2.5 @ 250µA	60	TO-252-3	Active
STD25NF10T4	STMicroelectronics	100	25	38 @ 12.5A, 10V	4 @ 250µA	100	TO-252-3	Active
STD25NF10LT4	STMicroelectronics	100	25	35 @ 12.5A, 10V	2.5 @ 250µA	100	TO-252-3	Active
STD26NF10	STMicroelectronics	100	25	38 @ 12.5A, 10V	4 @ 250µA	100	TO-252-3	Active
IPD30N10S3L34ATMA1	Infineon	100	30	31 @ 30A, 10V	2.4 @ 29µA	57	TO-252-3	Active
IPD35N10S3L26ATMA1	Infineon	100	35	24 @ 35A, 10V	2.4 @ 39µA	71	TO-252-3	Active
STD15NF10T4	STMicroelectronics	100	23	65 @ 12A, 10V	4 @ 250µA	TO-252-3	Active

Engineering Selection Recommendations

Direct Voltage Rating Equivalents (55V Class):

The HUF75329D3ST from onsemi operates at the identical 55V drain-to-source voltage rating as the IRLR2905PBF. This part is active in production and RoHS3 compliant. However, the continuous drain current is rated at 20A, which is lower than the original 42A specification. This device is suitable for applications where the 55V rating is critical and current requirements do not exceed 20A at 25°C.

Enhanced Voltage Rating Equivalents (60V Class):

The FDD13AN06A0 and FDD13AN06A0-F085 from onsemi both feature 60V drain-to-source voltage with 50A continuous drain current, exceeding the original 42A specification. Both parts are active in production and RoHS3 compliant. The FDD13AN06A0-F085 variant includes AEC-Q101 automotive qualification. These devices deliver superior current handling and are suitable for applications requiring higher voltage margin or increased current capacity within the same package footprint.

Enhanced Voltage Rating Equivalents (100V Class):

Multiple STMicroelectronics STripFET™ II series devices and Infineon OptiMOS™ series devices operate at 100V drain-to-source voltage. The STD25NF10T4, STD25NF10LT4, and STD26NF10 from STMicroelectronics are rated for 25A continuous drain current at 25°C. The IPD30N10S3L34ATMA1 and IPD35N10S3L26ATMA1 from Infineon are rated for 30A and 35A respectively. All are active in production and RoHS3 compliant. These devices provide enhanced voltage headroom for applications operating below 55V but requiring additional safety margin.

Selection Basis:

All substitute parts maintain TO-252-3 (DPAK) surface mount packaging, N-Channel MOSFET technology, -55°C to 175°C operating temperature range, RoHS3 compliance, and MSL Level 1 moisture sensitivity. Selection between candidates depends on application voltage requirements, current demands, and thermal dissipation constraints. Parts with active production status are preferred for long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can the HUF75329D3ST directly replace the IRLR2905PBF in all applications?

A: The HUF75329D3ST maintains the 55V drain-to-source voltage rating and TO-252-3 package compatibility. However, its 20A continuous drain current rating is significantly lower than the original 42A specification. Direct replacement is only suitable for applications where the actual drain current requirement does not exceed 20A at 25°C.

Q: What is the advantage of using 60V or 100V rated devices as substitutes?

A: Higher voltage-rated devices such as the FDD13AN06A0 (60V) or STD25NF10T4 (100V) provide additional voltage safety margin in applications operating below their rated voltage. This margin can improve reliability in circuits with voltage transients or overshoot conditions. However, higher voltage ratings typically result in increased on-resistance at equivalent gate drive voltages.

Q: Are the onsemi FDD13AN06A0 and FDD13AN06A0-F085 interchangeable?

A: Both parts share identical electrical specifications and TO-252-3 packaging. The FDD13AN06A0-F085 includes AEC-Q101 automotive qualification, making it suitable for automotive applications. The FDD13AN06A0 is suitable for general industrial applications. Selection depends on application requirements for automotive qualification.

Q: How do on-resistance specifications affect substitution decisions?

A: On-resistance (Rds On) directly impacts power dissipation and thermal performance. Lower Rds On values reduce heat generation at equivalent current levels. The original IRLR2905PBF specifies 27mOhm at 25A and 10V gate voltage. Substitute parts with lower Rds On values (such as FDD13AN06A0 at 13.5mOhm) improve efficiency, while higher values increase thermal load.

Q: Can I use a 100V rated device in a 55V application?

A: Yes, 100V rated devices operate safely in 55V applications. The higher voltage rating provides additional margin against transient overvoltage events. However, verify that the on-resistance and gate charge specifications are acceptable for your circuit's switching frequency and drive capability.

Q: What is the significance of gate threshold voltage (Vgs(th)) differences?

A: Gate threshold voltage determines the minimum gate-source voltage required to turn the device on. The original IRLR2905PBF specifies 2V at 250µA. Substitute parts with higher Vgs(th) values (such as 4V) may require higher gate drive voltages for full conduction. Verify gate drive circuit compatibility before substitution.

Q: Are all listed substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed in this document are RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original IRLR2905PBF specifications.

Q: What packaging considerations apply to TO-252-3 (DPAK) devices?

A: All substitute parts maintain TO-252-3 (DPAK) surface mount packaging with identical footprint and lead configuration. PCB layout and thermal management considerations remain consistent across all listed alternatives. Verify thermal pad connection and copper area for optimal heat dissipation.

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