IRLR130ATM N-Channel MOSFET 100V 13A Equivalent & Substitute Parts

Part Overview

The IRLR130ATM is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 13A continuous drain current in a surface mount DPAK package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 150°C and is suitable for general-purpose switching applications requiring moderate current handling in compact form factors.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	13	A (Tc)
On-Resistance (Rds On) @ Id, Vgs	120 mOhm @ 6.5A, 5V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	2	V @ 250µA
Gate Charge (Qg) @ Vgs	24	nC @ 5V
Input Capacitance (Ciss) @ Vds	755	pF @ 25V
Power Dissipation (Max)	2.5 (Ta), 46 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-252-3, DPAK	Surface Mount
Moisture Sensitivity Level (MSL)	1	Unlimited

Substitute Part Grouping Explanation

Substitution of the IRLR130ATM is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 100V
Continuous Drain Current (Id) must meet or exceed 13A at Tc
Gate Threshold Voltage (Vgs(th)) must be compatible with 5V drive circuits
Maximum Gate Voltage (Vgs Max) must accommodate ±20V operation
Operating temperature range must support -55°C to 150°C minimum

Mechanical Compatibility Requirements:

Package must be TO-252-3 (DPAK) surface mount configuration
Pin configuration must match 2 Leads + Tab standard

Substitution Logic: Parts are grouped into three categories based on their electrical performance relative to the IRLR130ATM:

Direct Equivalents – Parts with matching or superior drain current (≥13A), identical voltage rating (100V), and compatible thermal characteristics
Higher Performance Alternatives – Parts exceeding the 13A current specification while maintaining 100V rating, suitable for designs with thermal margin requirements
Reduced Performance Alternatives – Parts with lower drain current ratings but meeting minimum voltage and package requirements, applicable only where current demands are lower than specified

All substitute parts must maintain the TO-252-3 DPAK package and support the full operating temperature range or equivalent thermal performance.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Diss. Tc (W)	Temp Range (°C)	Status
IRLR130ATM	onsemi	100	13	120 @ 6.5A, 5V	2 @ 250µA	24 @ 5V	755 @ 25V	46	-55 to 150	Obsolete
STD10NF10T4	STMicroelectronics	100	13	130 @ 5A, 10V	4 @ 250µA	21 @ 10V	460 @ 25V	50	-55 to 175	Active
FQD19N10LTM	onsemi	100	15.6	100 @ 7.8A, 10V	2 @ 250µA	18 @ 5V	870 @ 25V	50	-55 to 150	Active
AOD478	Alpha & Omega Semiconductor Inc.	100	11	140 @ 4.5A, 10V	2.8 @ 250µA	13 @ 10V	540 @ 25V	45	-55 to 175	Active
ZXMN10A25KTC	Diodes Incorporated	100	4.2	125 @ 2.9A, 10V	4 @ 250µA	17.16 @ 10V	859 @ 50V	2.11	-55 to 150	Active
DMN10H170SK3-13	Diodes Incorporated	100	12	140 @ 5A, 10V	3 @ 250µA	9.7 @ 10V	1167 @ 25V	42	-55 to 150	Active
AUIRLR3410TR	International Rectifier	100	17	105 @ 10A, 10V	2 @ 250µA	34 @ 5V	800 @ 25V	79	-55 to 175	Active
BUK7275-100A,118	Nexperia USA Inc.	100	21.7	75 @ 13A, 10V	4 @ 1mA	N/A	1210 @ 25V	89	-55 to 175	Obsolete

Engineering Selection Recommendations

Direct Equivalent Selection:

STD10NF10T4 (STMicroelectronics) is the primary active equivalent. It maintains the 100V/13A electrical specification, operates across an extended temperature range (-55°C to 175°C), and carries RoHS3 compliance. This part is suitable for direct replacement in designs currently using the IRLR130ATM.

FQD19N10LTM (onsemi) provides higher drain current capability (15.6A) while maintaining the same voltage rating and gate threshold characteristics. This part is active and RoHS3 compliant, offering improved thermal performance (50W Tc) for applications requiring additional current margin.

Higher Performance Alternatives:

AUIRLR3410TR (International Rectifier) offers 17A continuous drain current with superior on-resistance (105 mOhm @ 10A, 10V) and extended temperature range (-55°C to 175°C). This automotive-qualified HEXFET device is suitable for designs requiring enhanced current handling and thermal performance.

BUK7275-100A,118 (Nexperia USA Inc.) provides the highest current rating (21.7A) with the lowest on-resistance (75 mOhm @ 13A, 10V) among available options. This part is automotive-qualified (AEC-Q101) and RoHS3 compliant, though classified as obsolete. It is applicable where maximum current capacity and efficiency are required.

Reduced Performance Alternatives:

AOD478 (Alpha & Omega Semiconductor Inc.) operates at 11A continuous drain current, below the IRLR130ATM specification. This part is active and RoHS3 compliant with extended temperature range (-55°C to 175°C). Selection is limited to applications where actual current demand is confirmed below 11A.

DMN10H170SK3-13 (Diodes Incorporated) provides 12A continuous drain current, marginally below the IRLR130ATM rating. This active, RoHS3-compliant part is suitable only where current requirements are verified below 12A.

ZXMN10A25KTC (Diodes Incorporated) is rated for 4.2A continuous drain current and is not suitable as a general substitute. This part is applicable only in low-current applications where the IRLR130ATM is over-specified.

Compliance and Status Considerations:

All active substitute parts carry RoHS3 compliance and REACH Unaffected status. The IRLR130ATM and BUK7275-100A,118 are classified as obsolete; therefore, active alternatives are preferred for new designs and long-term procurement planning. STD10NF10T4 and FQD19N10LTM are recommended as primary choices for obsolescence mitigation.

Frequently Asked Questions (FAQ)

Q: Can STD10NF10T4 directly replace IRLR130ATM in existing designs?

A: Yes. STD10NF10T4 maintains the 100V/13A electrical specification and TO-252-3 DPAK package. The gate threshold voltage differs (4V vs. 2V), requiring verification that drive circuits can accommodate this change. The extended temperature range (-55°C to 175°C) provides additional operational margin.

Q: What is the primary advantage of FQD19N10LTM over IRLR130ATM?

A: FQD19N10LTM provides 15.6A continuous drain current compared to 13A, offering 20% additional current capacity. On-resistance is lower (100 mOhm vs. 120 mOhm), resulting in reduced power dissipation and improved thermal performance. Both parts share the same 100V rating and gate threshold voltage (2V).

Q: Why is ZXMN10A25KTC listed as a substitute if it only provides 4.2A?

A: ZXMN10A25KTC is included because it was referenced in the original IRLR130ATM substitute list. However, its 4.2A rating is significantly below the 13A specification and is not suitable for general replacement. This part is applicable only in applications where current demand is confirmed below 4.2A.

Q: Are all substitute parts available in the same package?

A: Yes. All substitute parts listed are available in TO-252-3 DPAK surface mount configuration with 2 Leads + Tab, matching the IRLR130ATM package specification.

Q: What is the difference between Tc and Ta current ratings?

A: Tc (case temperature) ratings represent continuous drain current at 25°C case temperature, typically used for thermal design calculations. Ta (ambient temperature) ratings represent continuous drain current at 25°C ambient temperature. Tc ratings are generally higher and more conservative for thermal analysis.

Q: Can AUIRLR3410TR be used in non-automotive applications?

A: Yes. AUIRLR3410TR is automotive-qualified (AEC-Q101) but is not restricted to automotive use. Its superior electrical characteristics (17A, 105 mOhm on-resistance, 79W power dissipation) make it suitable for any application requiring higher performance than the IRLR130ATM.

Q: What is the significance of the gate charge (Qg) parameter in substitution?

A: Gate charge affects switching speed and drive circuit requirements. IRLR130ATM has 24 nC @ 5V, while substitutes range from 9.7 nC to 34 nC. Lower gate charge enables faster switching and reduces drive circuit power consumption. Higher gate charge may require stronger drive circuits but does not prevent substitution if the drive circuit is capable.

Q: Is RoHS3 compliance required for substitution?

A: RoHS3 compliance is not a functional requirement for substitution but indicates environmental and regulatory alignment with modern manufacturing standards. All active substitute parts carry RoHS3 compliance, while the obsolete IRLR130ATM does not. For new designs, RoHS3-compliant parts are preferred.

Q: Can AOD478 be used as a substitute despite its 11A rating?

A: AOD478 can be used only if the actual circuit current demand is confirmed to be 11A or lower. The IRLR130ATM specification is 13A; therefore, AOD478 represents a reduced-performance alternative applicable only to specific low-current applications.

Q: What thermal considerations apply when selecting a substitute?

A: Power dissipation ratings (Tc) range from 42W to 89W among active substitutes. Higher power dissipation ratings indicate better thermal performance at elevated currents. For applications operating near the 13A specification, FQD19N10LTM (50W Tc) or AUIRLR3410TR (79W Tc) provide improved thermal margins compared to IRLR130ATM (46W Tc).

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