IRLR120NPBF N-Channel 100V 10A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLR120NPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 10A continuous drain current in the DPAK (TO-252-3) surface mount package. This device is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity. The part operates across a temperature range of -55°C to 175°C and is RoHS3 compliant with MSL 1 rating.

Substiute Parts

IRLR120NPBF
Infineon TechnologiesIn Stock: 1596IRLR120NPBF Datasheet
IRLR120NPBF
Current Part
STD10NF10T4
STMicroelectronicsIn Stock: 24083STD10NF10T4 Datasheet
STD10NF10T4
Direct
BUK7275-100A,118
Nexperia USA Inc.In Stock: 69228BUK7275-100A,118 Datasheet
BUK7275-100A,118
MFR Recommended
DMN10H170SK3-13
Diodes IncorporatedIn Stock: 16619DMN10H170SK3-13 Datasheet
DMN10H170SK3-13
MFR Recommended
FDD1600N10ALZ
onsemiIn Stock: 15198FDD1600N10ALZ Datasheet
FDD1600N10ALZ
MFR Recommended
FQD13N10LTM
onsemiIn Stock: 26095FQD13N10LTM Datasheet
FQD13N10LTM
MFR Recommended
IRLR120
Vishay SiliconixIn Stock: 2326IRLR120 Datasheet
IRLR120
MFR Recommended
IRLR120PBF
Vishay SiliconixIn Stock: 4875IRLR120PBF Datasheet
IRLR120PBF
MFR Recommended
IRLR120TRL
Vishay SiliconixIn Stock: 1017IRLR120TRL Datasheet
IRLR120TRL
MFR Recommended
IRLR120TRL
Vishay SiliconixIn Stock: 1017IRLR120TRL Datasheet
IRLR120TRL
MFR Recommended
IRLR120TRLPBF
Vishay SiliconixIn Stock: 4088IRLR120TRLPBF Datasheet
IRLR120TRLPBF
MFR Recommended
IRLR120TRPBF
Vishay SiliconixIn Stock: 16533IRLR120TRPBF Datasheet
IRLR120TRPBF
MFR Recommended
IRLR120TRR
Vishay SiliconixIn Stock: 804IRLR120TRR Datasheet
IRLR120TRR
MFR Recommended
IRLR120TRRPBF
Vishay SiliconixIn Stock: 1046IRLR120TRRPBF Datasheet
IRLR120TRRPBF
MFR Recommended
STD6NF10T4
STMicroelectronicsIn Stock: 22431STD6NF10T4 Datasheet
STD6NF10T4
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 10 A
On-State Resistance (Rds On) @ 6A, 10V 185 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2 V
Gate Charge (Qg) @ 5V 20 nC
Power Dissipation (Max) 48 W
Operating Temperature Range -55 to 175 °C
Package Type TO-252-3 DPAK
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the IRLR120NPBF is determined by the following critical parameters:

Primary Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 100V (exact match required)
  • Package Type: TO-252-3 DPAK (mechanical and thermal compatibility)
  • FET Type: N-Channel (functional requirement)
  • Technology: MOSFET Metal Oxide (device class)

Secondary Compatibility Parameters:

  • Continuous Drain Current (Id): Minimum 10A at 25°C (equal or greater acceptable)
  • On-State Resistance (Rds On): Lower values indicate improved performance; higher values acceptable within thermal constraints
  • Gate Threshold Voltage (Vgs(th)): Range 2V to 4V acceptable for standard logic-level gate drive
  • Operating Temperature: Minimum -55°C to 150°C (IRLR120NPBF extends to 175°C)
  • RoHS Compliance: ROHS3 preferred for regulatory alignment

Substitute parts meeting these criteria maintain functional equivalence in switching applications, power supply designs, and motor control circuits where the IRLR120NPBF was originally specified.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs(th) (V) Qg (nC) Pd Max (W) Tj Range (°C) Package Status
IRLR120NPBF Infineon 100 10 185 @ 6A, 10V 2 @ 250µA 20 @ 5V 48 -55 to 175 TO-252-3 DPAK Discontinued
STD10NF10T4 STMicroelectronics 100 13 130 @ 5A, 10V 4 @ 250µA 21 @ 10V 50 -55 to 175 TO-252-3 DPAK Active
DMN10H170SK3-13 Diodes Incorporated 100 12 140 @ 5A, 10V 3 @ 250µA 9.7 @ 10V 42 -55 to 150 TO-252-3 Active
FDD1600N10ALZ onsemi 100 6.8 160 @ 3.4A, 10V 2.8 @ 250µA 3.61 @ 10V 14.9 -55 to 150 TO-252AA Active
FQD13N10LTM onsemi 100 10 180 @ 5A, 10V 2 @ 250µA 12 @ 5V 40 -55 to 150 TO-252AA Active
BUK7275-100A,118 Nexperia USA Inc. 100 21.7 75 @ 13A, 10V 4 @ 1mA 89 -55 to 175 TO-252-3 DPAK Obsolete
IRLR120TRPBF Vishay Siliconix 100 7.7 270 @ 4.6A, 5V 2 @ 250µA 12 @ 5V 42 -55 to 150 TO-252-3 DPAK Active
IRLR120TRLPBF Vishay Siliconix 100 7.7 270 @ 4.6A, 5V 2 @ 250µA 12 @ 5V 42 -55 to 150 TO-252-3 DPAK Active

Engineering Selection Recommendations

Tier 1 - Direct Functional Equivalents (Recommended for New Designs):

STD10NF10T4 (STMicroelectronics) provides the closest functional match with active product status. This device exceeds the IRLR120NPBF in continuous drain current (13A vs. 10A) and power dissipation (50W vs. 48W), while maintaining identical 100V Vdss rating and DPAK package. The lower on-state resistance (130mOhm vs. 185mOhm) improves thermal performance. RoHS3 compliance and -55°C to 175°C operating range align with original specifications.

FQD13N10LTM (onsemi) matches the IRLR120NPBF drain current specification exactly at 10A with nearly identical on-state resistance (180mOhm vs. 185mOhm). Active product status and RoHS3 compliance support long-term availability. Operating temperature range extends to -55°C to 150°C, which is acceptable for most applications.

Tier 2 - Functional Alternatives (Suitable for Current-Limited Applications):

DMN10H170SK3-13 (Diodes Incorporated) provides 12A continuous drain current with improved on-state resistance (140mOhm). Active status and RoHS3 compliance ensure supply continuity. Lower gate charge (9.7nC) reduces switching losses. Operating temperature range of -55°C to 150°C is acceptable for standard industrial applications.

Tier 3 - Higher-Performance Alternatives (For Thermal-Constrained Designs):

BUK7275-100A,118 (Nexperia USA Inc.) delivers significantly higher current capability (21.7A) and superior on-state resistance (75mOhm), enabling designs with reduced thermal dissipation. Extended operating range to 175°C matches the original part. Note: Product status is obsolete; verify long-term availability before selection.

Not Recommended for Direct Substitution:

FDD1600N10ALZ (onsemi) provides only 6.8A continuous drain current, which is insufficient for applications requiring the full 10A specification of the IRLR120NPBF.

IRLR120TRPBF and IRLR120TRLPBF (Vishay Siliconix) deliver 7.7A continuous drain current, below the 10A requirement. These variants are suitable only for applications with reduced current demands.

Frequently Asked Questions (FAQ)

Q: Can I use STD10NF10T4 as a direct replacement for IRLR120NPBF?

A: Yes. STD10NF10T4 meets all primary matching criteria: 100V Vdss, TO-252-3 DPAK package, N-Channel MOSFET technology, and exceeds the 10A continuous drain current specification. The device is active and RoHS3 compliant. Verify gate drive voltage compatibility in your circuit design, as Vgs(th) is 4V versus 2V for the original part.

Q: What is the difference between IRLR120NPBF and IRLR120TRPBF?

A: Both are Vishay Siliconix N-Channel 100V MOSFETs in DPAK packages. The primary difference is packaging: IRLR120NPBF is supplied in standard packaging (discontinued), while IRLR120TRPBF is supplied in Tape & Reel format (active). Electrical specifications are identical. However, IRLR120TRPBF provides only 7.7A continuous drain current, which is below the 10A specification of IRLR120NPBF.

Q: Is the operating temperature range critical for substitution?

A: The IRLR120NPBF operates from -55°C to 175°C. Most substitute parts operate to -55°C to 150°C, which is acceptable for standard industrial and consumer applications. If your design requires operation above 150°C, select STD10NF10T4 or BUK7275-100A,118, which extend to 175°C.

Q: Why does FDD1600N10ALZ appear in the substitute list if it only provides 6.8A?

A: FDD1600N10ALZ is listed as a substitute in the original IRLR120NPBF data but is not recommended for applications requiring the full 10A specification. This part is suitable only for designs with reduced current demands or as a secondary option in parallel configurations.

Q: What does RoHS3 compliance mean for my design?

A: RoHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. This is mandatory for products sold in the European Union and increasingly required globally. All recommended Tier 1 and Tier 2 substitutes are RoHS3 compliant.

Q: Can I use BUK7275-100A,118 even though it is obsolete?

A: BUK7275-100A,118 is classified as obsolete, indicating Nexperia has discontinued active production. While inventory may remain available through distributors, long-term supply cannot be guaranteed. Use this part only if current inventory is confirmed and alternative sources are identified for future production runs.

Q: How do I verify gate drive compatibility when substituting parts?

A: Compare the gate threshold voltage (Vgs(th)) and maximum gate voltage (Vgs Max) specifications. The IRLR120NPBF has Vgs(th) of 2V and Vgs Max of ±16V. Substitute parts with Vgs(th) up to 4V and Vgs Max of ±20V are compatible with standard logic-level gate drivers. Verify your gate driver output voltage matches the substitute part's requirements.

Q: What is the significance of on-state resistance (Rds On) in substitution?

A: Lower Rds On values reduce power dissipation and heat generation during operation. The IRLR120NPBF has Rds On of 185mOhm at 6A, 10V. Substitutes with lower Rds On (such as STD10NF10T4 at 130mOhm) improve efficiency. Higher Rds On values increase thermal load; verify thermal design margins before accepting higher values.

Q: Are all substitute parts available in the same DPAK package?

A: Most substitutes use TO-252-3 DPAK or TO-252AA packages, which are mechanically and thermally equivalent. FDD1600N10ALZ uses TO-252AA designation. Verify PCB footprint compatibility before final selection, as minor dimensional variations may exist between manufacturers.

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