IRLR110TRLPBF Equivalent & Substitute Parts

Part Overview

The IRLR110TRLPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 4.3A continuous drain current. This device is packaged in DPAK (TO-252-3) surface mount configuration and is designed for general-purpose switching applications requiring moderate current handling in compact form factors. The part is currently Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the same package type and voltage rating. The IRLR110TRLPBF serves as a direct parametric equivalent with identical electrical specifications but different packaging format. Additional substitutes provide functional alternatives with enhanced current ratings or thermal performance while maintaining the same 100V voltage class and DPAK package footprint.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	4.3	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	540	mOhm @ 2.6A, 5V
Gate Threshold Voltage (Vgs(th) Max) @ Id	2	V @ 250µA
Gate Charge (Qg Max) @ Vgs	6.1	nC @ 5V
Input Capacitance (Ciss Max) @ Vds	250	pF @ 25V
Power Dissipation (Max)	2.5 / 25	W (Ta) / W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	DPAK (TO-252-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IRLR110TRLPBF are classified based on the following substitution criteria:

Parametric Equivalents maintain identical electrical specifications across all critical parameters: 100V Vdss rating, 4.3A continuous drain current, 540mOhm Rds On, and DPAK package configuration. These parts differ only in packaging format (tape and reel configuration) or minor manufacturing variations.

Manufacturer-Recommended Substitutes share the same 100V voltage class and DPAK package footprint but provide enhanced performance characteristics. These substitutes are selected when higher current capacity, improved thermal performance, or extended temperature range is required while maintaining mechanical compatibility and package dimensions.

Critical Parameters for Substitution:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Package Type: Must be DPAK (TO-252-3) surface mount
Mounting Type: Surface mount configuration required
RoHS Compliance: ROHS3 compliant status maintained

Parameter Comparison

Parameter	IRLR110TRLPBF (Main)	IRLR110TRPBF (Equivalent)	BUK7275-100A,118 (Substitute)	STD6NF10T4 (Substitute)
Manufacturer	Vishay Siliconix	Vishay Siliconix	Nexperia USA Inc.	STMicroelectronics
Vdss (V)	100	100	100	100
Id @ 25°C (A)	4.3	4.3	21.7	6
Rds On Max (mOhm)	540 @ 2.6A, 5V	540 @ 2.6A, 5V	75 @ 13A, 10V	250 @ 3A, 10V
Vgs(th) Max (V)	2 @ 250µA	2 @ 250µA	4 @ 1mA	4 @ 250µA
Qg Max (nC)	6.1 @ 5V	6.1 @ 5V	—	14 @ 10V
Ciss Max (pF)	250 @ 25V	250 @ 25V	1210 @ 25V	280 @ 25V
Power Dissipation Max (W)	2.5 (Ta) / 25 (Tc)	2.5 (Ta) / 25 (Tc)	89 (Tc)	30 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 175	-65 to 175
Package	DPAK (TO-252-3)	DPAK (TO-252-3)	DPAK (TO-252-3)	DPAK (TO-252-3)
Product Status	Active	Active	Obsolete	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRLR110TRPBF is the direct parametric equivalent to IRLR110TRLPBF. Both parts are manufactured by Vishay Siliconix with identical electrical specifications and Active product status. The primary difference is packaging format: IRLR110TRPBF is supplied in Cut Tape and Digi-Reel format with significantly higher inventory availability (15,165 units versus 712 units). This substitute is selected when packaging format flexibility is required without any change to electrical performance or thermal characteristics.

STD6NF10T4 is an Active substitute manufactured by STMicroelectronics. This part maintains the 100V voltage class and DPAK package but provides enhanced current capacity (6A versus 4.3A) and improved thermal performance (30W Tc versus 25W Tc). The STD6NF10T4 features lower on-state resistance (250mOhm versus 540mOhm) and extended operating temperature range (-65°C to 175°C). This substitute is selected for applications requiring higher current handling or improved thermal margin within the same package footprint.

BUK7275-100A,118 is a Nexperia substitute with significantly enhanced performance characteristics. This part provides 21.7A continuous drain current and 89W thermal dissipation capacity, representing a substantial upgrade in current handling capability. However, this part carries Obsolete product status and is qualified to AEC-Q101 automotive standards. Selection of this substitute is limited to applications where the enhanced current capacity justifies the obsolete status and automotive qualification requirements.

All substitute parts maintain ROHS3 compliance, DPAK package compatibility, and 100V voltage rating. Selection between substitutes depends on application requirements for current capacity, thermal performance, and product lifecycle status.

Frequently Asked Questions (FAQ)

Q: Can IRLR110TRPBF be used as a direct replacement for IRLR110TRLPBF?

A: Yes. IRLR110TRPBF is a parametric equivalent with identical electrical specifications, voltage rating, current capacity, and thermal performance. The only difference is packaging format (tape and reel configuration). Both parts are manufactured by Vishay Siliconix and carry Active product status with ROHS3 compliance.

Q: What is the primary difference between IRLR110TRLPBF and STD6NF10T4?

A: Both parts share the same 100V voltage rating and DPAK package. STD6NF10T4 provides higher continuous drain current (6A versus 4.3A), lower on-state resistance (250mOhm versus 540mOhm), and higher power dissipation capacity (30W Tc versus 25W Tc). STD6NF10T4 is suitable for applications requiring enhanced current handling within the same package footprint.

Q: Is BUK7275-100A,118 suitable for new designs?

A: BUK7275-100A,118 carries Obsolete product status and is not recommended for new designs. This part is qualified to AEC-Q101 automotive standards and provides significantly enhanced current capacity (21.7A) and thermal performance (89W Tc). Selection of this part is limited to legacy applications or automotive-qualified designs where the enhanced performance justifies the obsolete status.

Q: Are all substitute parts available in DPAK package?

A: Yes. All substitute parts listed are packaged in DPAK (TO-252-3) surface mount configuration with identical pin configuration and mechanical footprint. This ensures direct board-level compatibility without layout modifications.

Q: What is the operating temperature range difference between substitutes?

A: IRLR110TRLPBF and IRLR110TRPBF operate from -55°C to 150°C. STD6NF10T4 extends this range to -65°C to 175°C, providing wider temperature margin. BUK7275-100A,118 also operates to 175°C maximum junction temperature. Extended temperature range is beneficial for applications in extreme thermal environments.

Q: Do all substitutes maintain RoHS3 compliance?

A: Yes. IRLR110TRPBF, STD6NF10T4, and BUK7275-100A,118 are all ROHS3 compliant. Compliance status is maintained across all substitute selections.

Q: What is the gate charge difference between IRLR110TRLPBF and STD6NF10T4?

A: IRLR110TRLPBF has gate charge of 6.1 nC at 5V drive voltage. STD6NF10T4 has gate charge of 14 nC at 10V drive voltage. Higher gate charge requires increased driver current and switching time. This difference affects gate drive circuit design and switching frequency performance.

Q: Can IRLR110TRLPBF be substituted with higher current parts in existing designs?

A: Higher current substitutes such as STD6NF10T4 (6A) or BUK7275-100A,118 (21.7A) are electrically compatible with IRLR110TRLPBF (4.3A) in applications where the original current rating is not fully utilized. However, gate drive characteristics and thermal management must be evaluated for each application. Lower on-state resistance in higher-current parts may require gate drive circuit adjustment.

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