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IRLR024TRL N-Channel MOSFET 60V 14A DPAK Equivalent & Substitute Parts
Part Overview
The IRLR024TRL is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 14A continuous drain current in a surface mount DPAK package. The device is classified as Active product status with 4400 pieces currently in stock. This component is used in switching applications requiring moderate voltage and current handling in compact form factors.
Equivalent and substitute parts are identified based on matching or exceeding the electrical performance parameters while maintaining compatibility with the DPAK surface mount package. Substitutes are selected when the main part is unavailable, when alternative manufacturers are preferred, or when design requirements allow for different voltage or current ratings within acceptable operating ranges.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 14 | A (Tc) |
| On-State Drain Resistance (Rds On Max) @ Id, Vgs | 100 mOhm @ 8.4A, 5V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 2 | V @ 250µA |
| Gate Charge (Qg Max) @ Vgs | 18 | nC @ 5V |
| Input Capacitance (Ciss Max) @ Vds | 870 | pF @ 25V |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
Substitute Part Grouping Explanation
Substitute parts for the IRLR024TRL are grouped into two categories based on substitution criteria:
Category 1: Direct Parametric Equivalents Parts that match the IRLR024TRL across all critical electrical parameters: 60V Vdss, 14A continuous drain current, 100 mOhm Rds On, and DPAK surface mount package. These parts are interchangeable without circuit modification.
Category 2: Functional Alternatives Parts that differ in one or more key parameters (Vdss, Id, or Rds On) but remain compatible within the DPAK package form factor. These substitutes are selected when the application allows for higher voltage ratings, different current handling, or alternative on-state resistance characteristics. Functional alternatives require design verification to confirm suitability.
Key Parameters Determining Substitution:
- Drain to Source Voltage (Vdss): 60V minimum required
- Continuous Drain Current (Id): 14A minimum required
- On-State Resistance (Rds On): 100 mOhm maximum at specified conditions
- Package Type: DPAK surface mount (TO-252-3)
- Operating Temperature: -55°C to 150°C minimum range
- Gate Threshold Voltage (Vgs(th)): 2V maximum
- Mounting: Surface Mount
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On Max (mOhm) | Vgs(th) Max (V) | Qg Max (nC) | Ciss Max (pF) | Power Dissipation (W) | Temp Range (°C) | Package | Product Status | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLR024TRL | Vishay Siliconix | 60 | 14 | 100 @ 8.4A, 5V | 2 @ 250µA | 18 @ 5V | 870 @ 25V | 2.5 (Ta), 42 (Tc) | -55 to 150 | DPAK | Active | Non-compliant |
| IRLR024TRPBF | Vishay Siliconix | 60 | 14 | 100 @ 8.4A, 5V | 2 @ 250µA | 18 @ 5V | 870 @ 25V | 2.5 (Ta), 42 (Tc) | -55 to 150 | DPAK | Active | ROHS3 Compliant |
| IRLR024NTRPBF | Infineon Technologies | 55 | 17 | 65 @ 10A, 10V | 2 @ 250µA | 15 @ 5V | 480 @ 25V | 45 (Tc) | -55 to 175 | DPAK | Active | ROHS3 Compliant |
| FQD16N25CTM | onsemi | 250 | 16 | 270 @ 8A, 10V | 4 @ 250µA | 53.5 @ 10V | 1080 @ 25V | 160 (Tc) | -55 to 150 | DPAK | Active | ROHS3 Compliant |
| ZXMN7A11KTC | Diodes Incorporated | 70 | 4.2 | 130 @ 4.4A, 10V | 1 @ 250µA | 7.4 @ 10V | 298 @ 40V | 2.11 (Ta) | -55 to 150 | DPAK | Active | ROHS3 Compliant |
| FDD3N40TM | onsemi | 400 | 2 | 3400 @ 1A, 10V | 5 @ 250µA | 6 @ 10V | 225 @ 25V | 30 (Tc) | -55 to 150 | DPAK | Active | ROHS3 Compliant |
| FCD4N60TM | onsemi | 600 | 3.9 | 1200 @ 2A, 10V | 5 @ 250µA | 16.6 @ 10V | 540 @ 25V | 50 (Tc) | -55 to 150 | DPAK | Not For New Designs | ROHS3 Compliant |
| FQD2N100TM | onsemi | 1000 | 1.6 | 9000 @ 0.8A, 10V | 5 @ 250µA | 15.5 @ 10V | 520 @ 25V | 2.5 (Ta), 50 (Tc) | -55 to 150 | DPAK | Active | ROHS3 Compliant |
Engineering Selection Recommendations
Direct Equivalent (Recommended for Direct Replacement):
IRLR024TRPBF is the direct parametric equivalent to IRLR024TRL. Both parts share identical electrical specifications: 60V Vdss, 14A continuous drain current, 100 mOhm Rds On, and DPAK package. The primary difference is packaging format (Tape & Reel versus bulk) and RoHS compliance status. IRLR024TRPBF carries ROHS3 compliance, making it suitable for applications with RoHS requirements. Inventory availability is higher for IRLR024TRPBF (15365 pieces) compared to the main part (4400 pieces).
Near-Equivalent Alternative:
IRLR024NTRPBF (Infineon Technologies) provides improved performance characteristics while maintaining near-equivalent functionality. This part features 55V Vdss (slightly lower than 60V), 17A continuous drain current (higher than 14A), and superior on-state resistance of 65 mOhm at 10A, 10V (compared to 100 mOhm). The extended operating temperature range (-55°C to 175°C) and ROHS3 compliance add design flexibility. This part is suitable for applications where the 60V rating is not critical and where improved current handling and lower losses are beneficial. Inventory is substantial at 77400 pieces.
Functional Alternatives (Application-Dependent Selection):
FQD16N25CTM (onsemi) is suitable for applications requiring higher voltage operation (250V Vdss) with comparable current handling (16A). This part is appropriate when circuit design allows for higher voltage margins or when operating in higher voltage environments.
ZXMN7A11KTC (Diodes Incorporated) operates at 70V Vdss with reduced continuous current (4.2A). This part is applicable in low-current switching applications where the 60V rating is marginal and where lower gate charge (7.4 nC) is advantageous for fast switching.
FDD3N40TM (onsemi) and FQD2N100TM (onsemi) represent high-voltage alternatives (400V and 1000V respectively) with significantly reduced current ratings. These parts are not suitable as direct substitutes but may be considered in specialized high-voltage, low-current applications.
Parts to Avoid:
FCD4N60TM carries "Not For New Designs" product status and should not be selected for new circuit development despite ROHS3 compliance and adequate electrical specifications.
Frequently Asked Questions (FAQ)
Q: Can IRLR024TRPBF be used as a direct replacement for IRLR024TRL?
A: Yes. IRLR024TRPBF is a direct parametric equivalent with identical electrical specifications. The difference is packaging format (Tape & Reel) and RoHS compliance status. No circuit modifications are required.
Q: What is the primary difference between IRLR024TRL and IRLR024NTRPBF?
A: IRLR024NTRPBF has a lower Vdss rating (55V versus 60V) but offers higher continuous drain current (17A versus 14A) and lower on-state resistance (65 mOhm versus 100 mOhm). The operating temperature range extends to 175°C. Selection depends on whether the 60V rating is required for your application.
Q: Are all substitute parts available in DPAK packaging?
A: Yes. All listed substitute parts are supplied in DPAK (TO-252-3) surface mount package, ensuring mechanical compatibility with the original IRLR024TRL footprint.
Q: Which substitute part has the best RoHS compliance status?
A: IRLR024TRPBF, IRLR024NTRPBF, FQD16N25CTM, ZXMN7A11KTC, FDD3N40TM, FCD4N60TM, and FQD2N100TM all carry ROHS3 compliance. The original IRLR024TRL is RoHS non-compliant.
Q: Can ZXMN7A11KTC replace IRLR024TRL in a high-current application?
A: No. ZXMN7A11KTC is rated for only 4.2A continuous drain current, which is insufficient for applications requiring the 14A capability of IRLR024TRL. This part is suitable only for low-current switching applications.
Q: What is the significance of gate charge (Qg) differences between substitute parts?
A: Gate charge affects switching speed and gate drive requirements. Lower gate charge (such as ZXMN7A11KTC at 7.4 nC) enables faster switching with lower drive power. Higher gate charge (such as FQD16N25CTM at 53.5 nC) requires more robust gate drive circuits but may provide better noise immunity.
Q: Is FCD4N60TM recommended for new designs?
A: No. FCD4N60TM carries "Not For New Designs" product status. While electrically functional, this part should not be selected for new circuit development. Use IRLR024TRPBF or IRLR024NTRPBF instead.
Q: How do I determine if a substitute part is suitable for my application?
A: Verify that the substitute part meets or exceeds the minimum requirements for your circuit: Vdss must be at least 60V, continuous drain current must be at least 14A, and on-state resistance must not exceed acceptable loss limits. Confirm that the DPAK package is compatible with your PCB layout. Review operating temperature requirements against the -55°C to 150°C range of the original part.
Q: What is the difference between Tc and Ta power dissipation ratings?
A: Tc (case temperature) represents power dissipation when the device case is maintained at 25°C through external cooling. Ta (ambient temperature) represents power dissipation in free air at 25°C ambient without forced cooling. Tc ratings are typically higher and represent the device's maximum capability with proper thermal management.
Q: Can FQD16N25CTM be used in place of IRLR024TRL?
A: FQD16N25CTM can be used only if your circuit design allows for 250V Vdss operation. The higher voltage rating provides additional safety margin but does not improve performance at 60V. Current handling (16A) exceeds requirements. Verify that gate drive voltage compatibility (10V for FQD16N25CTM versus 5V for IRLR024TRL) is acceptable in your circuit.
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