IRLR024 N-Channel MOSFET 60V 14A DPAK Equivalent & Substitute Parts

Part Overview

The IRLR024 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 14A continuous drain current in a surface mount DPAK package. The device is classified as Active product status with RoHS non-compliant certification. Equivalent and substitute parts are identified based on matching or exceeding electrical performance parameters while maintaining compatible package form factors and operating characteristics. Substitution becomes necessary when the primary part reaches end-of-life status, inventory constraints occur, or design requirements necessitate alternative manufacturers with improved compliance certifications.

Substiute Parts

IRLR024
Vishay SiliconixIn Stock: 16040IRLR024 Datasheet
IRLR024
Current Part
IRLR024PBF
Vishay SiliconixIn Stock: 31760IRLR024PBF Datasheet
IRLR024PBF
Direct
FCD4N60TM
onsemiIn Stock: 15360FCD4N60TM Datasheet
FCD4N60TM
MFR Recommended
FDD3N40TM
onsemiIn Stock: 19793FDD3N40TM Datasheet
FDD3N40TM
MFR Recommended
FQD16N25CTM
onsemiIn Stock: 26507FQD16N25CTM Datasheet
FQD16N25CTM
MFR Recommended
FQD2N100TM
onsemiIn Stock: 40231FQD2N100TM Datasheet
FQD2N100TM
MFR Recommended
IRLR024NTRPBF
Infineon TechnologiesIn Stock: 77416IRLR024NTRPBF Datasheet
IRLR024NTRPBF
MFR Recommended
ZXMN7A11KTC
Diodes IncorporatedIn Stock: 2162ZXMN7A11KTC Datasheet
ZXMN7A11KTC
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 14 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 100 mOhm @ 8.4A, 5V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 2 V @ 250µA
Gate Charge (Qg Max) @ Vgs 18 nC @ 5V
Input Capacitance (Ciss Max) @ Vds 870 pF @ 25V
Power Dissipation (Max) 2.5 (Ta), 42 (Tc) W
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-252-3, DPAK Surface Mount
Moisture Sensitivity Level (MSL) 1 Unlimited

Substitute Part Grouping Explanation

Substitution logic for the IRLR024 is based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Equal to or greater than 60V
  • Continuous Drain Current (Id): Equal to or greater than 14A
  • On-State Resistance (Rds On): Equal to or lower than 100 mOhm at comparable gate voltage
  • Package Type: TO-252-3 DPAK surface mount configuration
  • Operating Temperature Range: Minimum -55°C to 150°C
  • Mounting Type: Surface mount compatibility

Secondary Compatibility Parameters:

  • Gate Threshold Voltage (Vgs(th)): Within ±1V of 2V specification
  • Gate Charge (Qg): Comparable switching characteristics
  • Input Capacitance (Ciss): Similar parasitic capacitance for circuit design
  • Moisture Sensitivity Level: MSL 1 or equivalent

Substitute parts are grouped into two categories: direct equivalents (identical electrical specifications with different packaging or compliance status) and functional equivalents (meeting or exceeding all critical electrical parameters while maintaining package compatibility).

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max (mOhm) Vgs(th) Max (V) Qg Max (nC) Ciss Max (pF) Power Dissipation (W) Package Product Status RoHS Status
IRLR024 Vishay Siliconix 60 14 (Tc) 100 @ 8.4A, 5V 2 @ 250µA 18 @ 5V 870 @ 25V 2.5 (Ta), 42 (Tc) TO-252-3 DPAK Active Non-compliant
IRLR024PBF Vishay Siliconix 60 14 (Tc) 100 @ 8.4A, 5V 2 @ 250µA 18 @ 5V 870 @ 25V 42 (Tc) TO-252-3 DPAK Active ROHS3 Compliant
IRLR024NTRPBF Infineon Technologies 55 17 (Tc) 65 @ 10A, 10V 2 @ 250µA 15 @ 5V 480 @ 25V 45 (Tc) TO-252-3 DPAK Active ROHS3 Compliant
FQD16N25CTM onsemi 250 16 (Tc) 270 @ 8A, 10V 4 @ 250µA 53.5 @ 10V 1080 @ 25V 160 (Tc) TO-252-3 DPAK Active ROHS3 Compliant
ZXMN7A11KTC Diodes Incorporated 70 4.2 (Ta) 130 @ 4.4A, 10V 1 @ 250µA 7.4 @ 10V 298 @ 40V 2.11 (Ta) TO-252-3 Active ROHS3 Compliant
FCD4N60TM onsemi 600 3.9 (Tc) 1200 @ 2A, 10V 5 @ 250µA 16.6 @ 10V 540 @ 25V 50 (Tc) TO-252-3 DPAK Not For New Designs ROHS3 Compliant
FDD3N40TM onsemi 400 2 (Tc) 3400 @ 1A, 10V 5 @ 250µA 6 @ 10V 225 @ 25V 30 (Tc) TO-252-3 DPAK Active ROHS3 Compliant
FQD2N100TM onsemi 1000 1.6 (Tc) 9000 @ 800mA, 10V 5 @ 250µA 15.5 @ 10V 520 @ 25V 2.5 (Ta), 50 (Tc) TO-252-3 DPAK Active ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitute):

IRLR024PBF from Vishay Siliconix is the direct equivalent to IRLR024, offering identical electrical specifications with ROHS3 compliance certification. This part maintains 60V Vdss, 14A continuous drain current, and 100 mOhm on-state resistance. The primary distinction is packaging format (Tube versus standard packaging) and RoHS compliance status. Selection of IRLR024PBF is appropriate for applications requiring regulatory compliance without electrical performance modification.

Functional Equivalent (Performance Enhancement):

IRLR024NTRPBF from Infineon Technologies provides superior electrical performance with 17A continuous drain current (21% higher than IRLR024), reduced on-state resistance of 65 mOhm (35% lower), and extended operating temperature range to 175°C. Vdss is rated at 55V, which is acceptable for 60V-rated applications with appropriate design margin verification. This part is ROHS3 compliant and Active product status. Selection is appropriate when improved thermal performance or higher current capacity is required.

Limited Substitution (Voltage-Dependent Applications):

FQD16N25CTM from onsemi provides 16A continuous drain current (matching IRLR024 current capability) but with 250V Vdss rating. This part is suitable only for applications where 60V voltage rating is not a critical constraint and higher voltage capability is beneficial. On-state resistance is 270 mOhm, which represents degraded performance compared to IRLR024.

Not Recommended for Direct Substitution:

FCD4N60TM (onsemi) carries "Not For New Designs" product status and exhibits significantly reduced current capability (3.9A versus 14A). FDD3N40TM provides only 2A continuous drain current. FQD2N100TM is rated for 1000V operation with only 1.6A current capacity. ZXMN7A11KTC provides only 4.2A continuous drain current. These parts do not meet the minimum electrical requirements for direct substitution in applications designed for IRLR024 specifications.

Frequently Asked Questions (FAQ)

Q: Can IRLR024PBF be used as a direct replacement for IRLR024?

A: Yes. IRLR024PBF is electrically identical to IRLR024 with matching 60V Vdss, 14A continuous drain current, and 100 mOhm on-state resistance. The primary difference is ROHS3 compliance certification. Packaging format differs (Tube), but electrical performance and pinout are identical. Direct substitution is valid for all applications.

Q: Is IRLR024NTRPBF a suitable substitute for IRLR024?

A: IRLR024NTRPBF from Infineon is functionally compatible with superior performance characteristics. It provides 17A continuous drain current versus 14A, reduced on-state resistance of 65 mOhm versus 100 mOhm, and extended temperature range to 175°C. Vdss is 55V versus 60V, which is acceptable for most applications with appropriate design verification. This part is recommended when improved thermal performance or higher current capacity is beneficial.

Q: What is the minimum drain current requirement for substitution?

A: Substitute parts must provide continuous drain current equal to or greater than 14A at 25°C to maintain electrical equivalence. Parts with lower current ratings (such as FCD4N60TM at 3.9A or FDD3N40TM at 2A) cannot be used as direct substitutes in applications designed for 14A operation.

Q: Can I use a higher voltage-rated MOSFET as a substitute?

A: Yes, provided all other electrical parameters meet or exceed IRLR024 specifications. Higher voltage ratings (such as FQD16N25CTM at 250V or FQD2N100TM at 1000V) are acceptable for applications where voltage headroom is not a constraint. However, on-state resistance typically increases with voltage rating, which may impact thermal performance and power dissipation.

Q: Are all substitute parts ROHS3 compliant?

A: IRLR024PBF, IRLR024NTRPBF, FQD16N25CTM, ZXMN7A11KTC, FCD4N60TM, FDD3N40TM, and FQD2N100TM are all ROHS3 compliant. The original IRLR024 is RoHS non-compliant. Selection of compliant alternatives is necessary for applications subject to regulatory requirements.

Q: What is the significance of on-state resistance (Rds On) in substitution?

A: On-state resistance directly affects power dissipation and thermal performance. IRLR024 specifies 100 mOhm maximum at 8.4A and 5V gate voltage. Lower Rds On values (such as IRLR024NTRPBF at 65 mOhm) reduce power loss and heat generation. Higher values increase thermal load. Substitutes with Rds On greater than 100 mOhm may require thermal design verification.

Q: Is package compatibility guaranteed for all substitute parts?

A: All listed substitute parts use TO-252-3 DPAK surface mount package configuration, ensuring mechanical and pinout compatibility. However, verify specific supplier device package designations (such as TO-252AA versus TO-252-3) with component datasheets to confirm PCB footprint compatibility.

Q: What is the impact of gate charge (Qg) differences on circuit design?

A: Gate charge affects switching speed and gate drive circuit requirements. IRLR024 specifies 18 nC at 5V. IRLR024NTRPBF provides 15 nC at 5V (faster switching), while FQD16N25CTM requires 53.5 nC at 10V (slower switching). Lower gate charge enables faster switching frequencies and reduced gate drive power consumption. Verify gate drive circuit compatibility when substituting parts with significantly different Qg values.

Q: Can ZXMN7A11KTC be used in high-current applications?

A: No. ZXMN7A11KTC provides only 4.2A continuous drain current, which is insufficient for applications designed for IRLR024's 14A rating. This part is suitable only for low-current applications where voltage rating (70V) and package form factor are primary selection criteria.

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