IRLM220ATF N-Channel MOSFET 200V 1.13A Equivalent & Substitute Parts

Part Overview

The IRLM220ATF is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 1.13A continuous drain current at 25°C. The device is housed in a SOT-223-4 surface mount package and dissipates a maximum of 2W at the case temperature. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factor.

Substiute Parts

IRLM220ATF

onsemiIn Stock: 2497IRLM220ATF Datasheet

Current PartRFQ

FQT4N20LTF

onsemiIn Stock: 61227FQT4N20LTF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRLM220ATF is determined by strict equivalence across the following electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain a Drain to Source Voltage (Vdss) rating of 200V or greater to ensure safe operation in the same circuit topology.

Current Handling: The substitute part must support continuous drain current (Id) at or above the 1.13A specification at 25°C ambient temperature to prevent thermal stress and component failure.

On-State Resistance (Rds On): The substitute part must demonstrate acceptable on-state resistance characteristics at the specified gate-source voltage (Vgs) to maintain switching efficiency and thermal performance within the 2W power dissipation limit.

Gate Charge (Qg): The substitute part must exhibit gate charge characteristics compatible with the drive circuit, ensuring proper switching speed and control signal compatibility.

Package Form Factor: The substitute part must be housed in the SOT-223-4 surface mount package to ensure mechanical and electrical compatibility with existing printed circuit board layouts.

Operating Temperature Range: The substitute part must support the full operating temperature range of -55°C to 150°C (TJ) to maintain reliability across all environmental conditions.

Compliance Standards: The substitute part must maintain ROHS3 compliance, MSL Level 1 rating, and REACH unaffected status to ensure regulatory and supply chain compatibility.

The FQT4N20LTF meets these substitution criteria and is identified as the manufacturer-recommended equivalent.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FQT4N20LTF

The FQT4N20LTF is the manufacturer-recommended substitute for the obsolete IRLM220ATF. Both devices are manufactured by onsemi and share identical voltage ratings (200V Vdss), identical operating temperature ranges (-55°C to 150°C), and identical package form factors (SOT-223-4). Both parts maintain ROHS3 compliance, MSL Level 1 rating, and REACH unaffected status, ensuring regulatory and supply chain continuity.

The FQT4N20LTF is classified as an active product with current production and inventory availability (61,200 pcs in stock), providing immediate supply chain access compared to the obsolete IRLM220ATF status.

Electrical Compatibility Considerations:

The FQT4N20LTF exhibits a lower continuous drain current rating (850mA vs. 1.13A) and a higher on-state resistance specification (1.35 Ohm @ 425mA, 10V vs. 800 mOhm @ 570mA, 5V). These differences indicate that the FQT4N20LTF is suitable for applications where the circuit current demand does not exceed 850mA at case temperature. Applications requiring the full 1.13A continuous current capability of the IRLM220ATF must conduct detailed thermal and electrical analysis to confirm FQT4N20LTF compatibility.

The FQT4N20LTF demonstrates lower gate charge (5.2 nC @ 5V vs. 15 nC @ 5V) and lower input capacitance (310 pF @ 25V vs. 430 pF @ 25V), resulting in faster switching characteristics and reduced drive circuit loading.

Compliance and Supply Chain:

Both parts maintain identical regulatory compliance certifications. The FQT4N20LTF is part of the onsemi QFET® series and is available in Cut Tape (CT) and Digi-Reel® packaging formats, supporting both prototype and production-volume procurement workflows.

Frequently Asked Questions (FAQ)

Q: Can the FQT4N20LTF directly replace the IRLM220ATF in all applications?

A: The FQT4N20LTF is electrically and mechanically compatible with the IRLM220ATF in applications where the continuous drain current requirement does not exceed 850mA at case temperature. Applications requiring the full 1.13A continuous current capability must evaluate thermal performance and circuit operating conditions to confirm suitability. Both devices share identical 200V voltage ratings, SOT-223-4 package form factors, and operating temperature ranges.

Q: What are the key differences between the IRLM220ATF and FQT4N20LTF?

A: The primary differences are continuous drain current rating (1.13A vs. 850mA), on-state resistance characteristics (800 mOhm @ 570mA, 5V vs. 1.35 Ohm @ 425mA, 10V), gate charge (15 nC @ 5V vs. 5.2 nC @ 5V), and input capacitance (430 pF @ 25V vs. 310 pF @ 25V). The FQT4N20LTF exhibits lower gate charge and input capacitance, resulting in faster switching response. The IRLM220ATF supports higher continuous current and lower on-state resistance at 5V gate drive.

Q: Why is the IRLM220ATF classified as obsolete?

A: The IRLM220ATF is classified as obsolete by the manufacturer, indicating that production has been discontinued and future availability cannot be guaranteed. The FQT4N20LTF is the active manufacturer-recommended substitute, ensuring ongoing supply chain access and production support.

Q: Are the package dimensions identical between IRLM220ATF and FQT4N20LTF?

A: Both devices are housed in the SOT-223-4 surface mount package (also designated TO-261-4 or TO-261AA), ensuring identical mechanical compatibility with existing printed circuit board layouts and assembly processes.

Q: Do both parts meet the same regulatory compliance standards?

A: Yes. Both the IRLM220ATF and FQT4N20LTF are ROHS3 compliant, carry MSL Level 1 (Unlimited) moisture sensitivity ratings, and are REACH unaffected. Both parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: What is the impact of lower gate charge in the FQT4N20LTF?

A: The FQT4N20LTF exhibits lower gate charge (5.2 nC @ 5V vs. 15 nC @ 5V), which reduces the charge that must be supplied by the gate drive circuit to switch the device. This results in faster switching transitions, reduced drive circuit power consumption, and lower electromagnetic interference generation. Drive circuits designed for the IRLM220ATF will operate the FQT4N20LTF with improved switching performance.

Q: Can the FQT4N20LTF handle the same power dissipation as the IRLM220ATF?

A: The FQT4N20LTF is rated for 2.2W maximum power dissipation at case temperature, compared to 2W for the IRLM220ATF. The FQT4N20LTF provides slightly higher thermal capacity. However, actual power dissipation depends on circuit operating conditions, including drain current, on-state resistance, and switching frequency. Applications must calculate power dissipation based on specific circuit parameters.

Q: What inventory status should be considered for production planning?

A: The IRLM220ATF is obsolete with 2,467 pcs in stock. The FQT4N20LTF is an active product with 61,200 pcs in stock, providing significantly greater supply chain availability and production continuity for new designs and ongoing manufacturing.