IRLM210ATF N-Channel MOSFET 200V 770mA Equivalent & Substitute Parts

Part Overview

The IRLM210ATF is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 770mA continuous drain current in a surface mount SOT-223-4 package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 150°C and dissipates a maximum of 1.8W under specified conditions.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	770	mA
Power Dissipation (Max)	1.8	W
Rds On (Max) @ 390mA, 5V	1.5	Ω
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-223-4	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRLM210ATF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
FET Type: Must be N-Channel
Package: Must be SOT-223-4 or equivalent TO-261-4/TO-261AA footprint
Mounting Type: Must be Surface Mount
Operating Temperature Range: Must span -55°C to 150°C minimum
Technology: Must be MOSFET (Metal Oxide)

Allowable Variation Parameters:

Continuous Drain Current (Id): May exceed 770mA
Power Dissipation: May exceed 1.8W
Rds On: May be lower (improved performance)
Gate Charge (Qg): May vary
Input Capacitance (Ciss): May vary

All three substitute parts meet these criteria and are therefore electrically and mechanically compatible with the IRLM210ATF in applications where the original part is specified.

Parameter Comparison

Parameter	IRLM210ATF	FQT4N20LTF	STN1NF20	STN4NF20L
Manufacturer	onsemi	onsemi	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	200	200	200	200
Id @ 25°C (mA)	770	850	1000	1000
Power Dissipation Max (W)	1.8	2.2	2.0	3.3
Rds On Max @ 5V or 10V (Ω)	1.5 @ 390mA, 5V	1.35 @ 425mA, 10V	1.5 @ 500mA, 10V	1.5 @ 500mA, 10V
Vgs(th) Max @ 250µA (V)	2	2	4	3
Vgs Max (V)	±20	±20	±20	±20
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-223-4	SOT-223-4	SOT-223	SOT-223
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

FQT4N20LTF (onsemi): This part maintains onsemi manufacturer continuity while offering improved electrical performance. It provides 850mA continuous drain current versus 770mA, with marginally lower Rds On (1.35Ω vs 1.5Ω) and increased power dissipation capability (2.2W vs 1.8W). The part is active and RoHS3 compliant, ensuring long-term availability and regulatory compliance.

STN1NF20 (STMicroelectronics): This STripFET™ II series device offers the highest current rating at 1A continuous drain current with 2W power dissipation. It features the lowest input capacitance (90pF) among the substitutes. The part is active and RoHS3 compliant. Gate threshold voltage is higher at 4V maximum.

STN4NF20L (STMicroelectronics): This STripFET™ II series device provides the highest power dissipation capability at 3.3W with 1A continuous drain current. It features the lowest gate charge (0.9nC @ 10V) and is active with RoHS3 compliance. Gate threshold voltage is 3V maximum, positioned between the other options.

All three substitutes are active products with established supply chains, whereas the IRLM210ATF is obsolete. Selection should be based on specific application requirements for current handling, power dissipation, and gate drive characteristics.

Frequently Asked Questions (FAQ)

Q: Can FQT4N20LTF directly replace IRLM210ATF in existing designs?

A: Yes. Both parts share identical Vdss (200V), FET type (N-Channel), package (SOT-223-4), and operating temperature range (-55°C to 150°C). The FQT4N20LTF provides equal or superior electrical performance with higher current and power ratings.

Q: What is the primary difference between the onsemi and STMicroelectronics substitutes?

A: The onsemi FQT4N20LTF maintains single-manufacturer sourcing. The STMicroelectronics parts (STN1NF20 and STN4NF20L) offer dual-source alternatives with different gate charge and power dissipation characteristics. STN4NF20L provides the highest power dissipation (3.3W) while STN1NF20 provides the lowest input capacitance (90pF).

Q: Are all substitutes available in the same package?

A: All substitutes use SOT-223 or SOT-223-4 packages with TO-261-4/TO-261AA footprint equivalence. PCB layout compatibility is maintained across all options.

Q: Does gate threshold voltage variation affect substitutability?

A: Gate threshold voltage differences (2V for IRLM210ATF and FQT4N20LTF versus 3-4V for STMicroelectronics parts) do not prevent substitution but may require gate drive circuit verification in applications with marginal drive voltage margins.

Q: What compliance certifications apply to these substitutes?

A: FQT4N20LTF, STN1NF20, and STN4NF20L are all RoHS3 compliant and REACH unaffected. All carry EAR99 export classification and identical HTSUS codes (8541.29.0095).

Q: Is the IRLM210ATF still available for procurement?

A: The IRLM210ATF is classified as obsolete. Existing inventory may be available through authorized distributors, but long-term availability is not guaranteed. Active substitute parts are recommended for new designs and ongoing production.

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