IRLM120ATF N-Channel MOSFET 100V 2.3A Equivalent & Substitute Parts

Part Overview

The IRLM120ATF is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 2.3A continuous drain current at 25°C. The device is housed in a SOT-223-4 surface mount package and dissipates a maximum of 2.7W. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substitute parts listed in this reference maintain functional compatibility through matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, gate threshold voltage, and thermal characteristics. All substitute devices are surface mount packages compatible with SOT-223-4 footprints.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	2.3	A (Tc)
Drive Voltage (Max Rds On)	5	V
Rds On (Max) @ Id, Vgs	220 mOhm @ 1.15A, 5V	Ω
Gate Threshold Voltage Vgs(th) (Max) @ Id	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15	nC @ 5V
Power Dissipation (Max)	2.7	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-223-4	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution logic for the IRLM120ATF is based on the following critical parameters that must be met or exceeded by alternative devices:

Primary Compatibility Criteria:

Drain-to-source voltage (Vdss) rating of 100V or higher
Continuous drain current (Id) capability of 2.3A or greater at 25°C
Gate threshold voltage (Vgs(th)) within acceptable switching range
Surface mount package compatible with SOT-223-4 footprint
Operating temperature range of -55°C to 150°C or greater
RoHS3 compliance and REACH unaffected status

Substitution Categories:

Category 1 - Direct Functional Equivalent (Recommended Manufacturer Substitute): FQT7N10LTF meets the 100V Vdss requirement and operates within the same temperature range. Although continuous drain current is rated at 1.7A (lower than the original 2.3A), this device is actively manufactured and maintains full compliance certifications. The lower current rating requires circuit-level evaluation for applications demanding the full 2.3A specification.

Category 2 - Similar Electrical Performance (Active Alternatives): BSP372NH6327XTSA1 (Infineon OptiMOS™) and IRFL4315TRPBF (Infineon HEXFET®) provide alternative sourcing from active product lines. BSP372NH6327XTSA1 maintains 100V Vdss with 1.8A continuous current. IRFL4315TRPBF exceeds the voltage rating at 150V Vdss with 2.6A continuous current, providing additional design margin for higher voltage applications.

Parameter Comparison

Parameter	IRLM120ATF (Main)	FQT7N10LTF	BSP372NH6327XTSA1	IRFL4315TRPBF
Manufacturer	onsemi	onsemi	Infineon Technologies	Infineon Technologies
Product Status	Obsolete	Active	Active	Active
Vdss (V)	100	100	100	150
Id @ 25°C (A)	2.3 (Tc)	1.7 (Tc)	1.8 (Ta)	2.6 (Ta)
Rds On (Max) @ Vgs (mOhm)	220 @ 1.15A, 5V	350 @ 850mA, 10V	230 @ 1.8A, 10V	185 @ 1.6A, 10V
Vgs(th) (Max) @ Id (V)	2 @ 250µA	2 @ 250µA	1.8 @ 218µA	5 @ 250µA
Gate Charge Qg (Max) (nC)	15 @ 5V	6 @ 5V	14.3 @ 10V	19 @ 10V
Power Dissipation (Max) (W)	2.7 (Tc)	2.0 (Tc)	1.8 (Ta)	2.8 (Ta)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-223-4	SOT-223-4	PG-SOT223-4	SOT-223
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Obsolete Part Mitigation): FQT7N10LTF is the primary substitute from onsemi's active product portfolio. This device maintains identical Vdss (100V) and Vgs(th) (2V @ 250µA) specifications. The reduced continuous drain current (1.7A versus 2.3A) requires circuit analysis to confirm adequate current margin for the intended application. FQT7N10LTF is actively manufactured with full ROHS3 compliance and unlimited moisture sensitivity level (MSL 1).

For Enhanced Performance or Higher Voltage Applications: IRFL4315TRPBF provides 150V Vdss rating with 2.6A continuous current, exceeding the original specification. This device is suitable for applications requiring additional voltage margin or higher current capability. The higher gate threshold voltage (5V @ 250µA) may require gate drive circuit adjustment compared to the original 2V specification.

For Equivalent Voltage Rating with Alternative Sourcing: BSP372NH6327XTSA1 maintains 100V Vdss with 1.8A continuous current from Infineon's OptiMOS™ series. This device offers lower on-resistance (230 mOhm @ 1.8A, 10V) compared to the original specification, providing improved thermal performance in power dissipation-sensitive applications.

All substitute parts maintain compliance with RoHS3 and REACH requirements, ensuring regulatory compatibility with existing design standards.

Frequently Asked Questions (FAQ)

Q: Can FQT7N10LTF directly replace IRLM120ATF in all applications? A: FQT7N10LTF is electrically compatible for applications where continuous drain current does not exceed 1.7A. The reduced current rating (1.7A versus 2.3A) requires circuit-level verification. Both devices share identical Vdss (100V), Vgs(th) (2V @ 250µA), and operating temperature range (-55°C to 150°C), ensuring functional compatibility for gate drive and thermal management. Package compatibility is confirmed for SOT-223-4 footprints.

Q: What is the difference between the temperature measurement points (Tc versus Ta)? A: Tc indicates case temperature measurement, while Ta indicates ambient temperature measurement. Both IRLM120ATF and FQT7N10LTF use Tc (case temperature) for current and power dissipation ratings. BSP372NH6327XTSA1 and IRFL4315TRPBF use Ta (ambient temperature) for these ratings. When comparing thermal performance, case temperature ratings typically provide more conservative (lower) current and power values than ambient temperature ratings under identical operating conditions.

Q: Is IRFL4315TRPBF suitable for 100V applications? A: Yes. IRFL4315TRPBF is rated for 150V Vdss, which exceeds the 100V requirement of IRLM120ATF. The device operates safely at 100V with additional voltage margin. The higher gate threshold voltage (5V @ 250µA) compared to the original 2V specification may require gate drive circuit adjustment to ensure proper switching performance.

Q: Are all substitute parts available in the same package footprint? A: All substitute parts are surface mount devices in SOT-223 or PG-SOT223-4 packages, compatible with SOT-223-4 footprints. Physical pin configurations and land patterns are compatible for direct PCB substitution without layout modification.

Q: What is the impact of lower gate charge (Qg) in FQT7N10LTF? A: FQT7N10LTF has lower gate charge (6 nC @ 5V) compared to IRLM120ATF (15 nC @ 5V). Lower gate charge reduces gate drive power requirements and enables faster switching transitions. This characteristic improves efficiency in switching applications and reduces thermal stress on gate drive circuits.

Q: Do all substitute parts meet RoHS3 compliance? A: Yes. FQT7N10LTF, BSP372NH6327XTSA1, and IRFL4315TRPBF are all ROHS3 compliant with REACH unaffected status, matching the regulatory compliance of the original IRLM120ATF.

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