IRLM110ATF N-Channel MOSFET 100V 1.5A Equivalent & Substitute Parts

Part Overview

The IRLM110ATF is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 1.5A continuous drain current at 25°C. The device is housed in a SOT-223-4 surface mount package and dissipates a maximum of 2.2W. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance. Substitute parts listed below maintain electrical and mechanical compatibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	1.5	A (Tc)
Drive Voltage	5	V
Rds On (Max) @ Id, Vgs	440	mOhm @ 750mA, 5V
Gate Threshold Voltage Vgs(th) (Max) @ Id	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8	nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	235	pF @ 25V
Power Dissipation (Max)	2.2	W (Tc)
Operating Temperature Range	−55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	SOT-223-4	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the IRLM110ATF are selected based on strict electrical and mechanical compatibility. The following parameters define the substitution criteria:

Primary Compatibility Parameters:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): Equal to or greater than 1.5A
Mounting Type: Surface Mount
Package: SOT-223-4 or equivalent footprint (TO-261-4, TO-261AA)
Operating Temperature Range: −55°C to 150°C or wider
Moisture Sensitivity Level: 1 (Unlimited)

Secondary Electrical Parameters (must not degrade system performance):

Gate Threshold Voltage Vgs(th): 2V to 3V maximum
Maximum Gate Voltage Vgs: ±20V
Operating temperature compatibility with −55°C to 150°C range

Substitute parts FQT7N10LTF and ZVN4310GTA meet all primary and secondary criteria. Both devices are rated for 100V Vdss, provide continuous drain current equal to or exceeding 1.5A, utilize SOT-223 surface mount packaging, and operate across the required temperature range. Both substitute parts are in active product status, ensuring long-term availability and supply chain stability.

Parameter Comparison

Parameter	IRLM110ATF	FQT7N10LTF	ZVN4310GTA	Unit
Manufacturer	onsemi	onsemi	Diodes Incorporated	—
FET Type	N-Channel	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	100	100	100	V
Continuous Drain Current (Id) @ 25°C	1.5 (Tc)	1.7 (Tc)	1.67 (Ta)	A
Drive Voltage	5	5, 10	5, 10	V
Rds On (Max) @ Id, Vgs	440 @ 750mA, 5V	350 @ 850mA, 10V	540 @ 3.3A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	2 @ 250µA	2 @ 250µA	3 @ 1mA	V
Gate Charge (Qg) (Max) @ Vgs	8 @ 5V	6 @ 5V	—	nC
Input Capacitance (Ciss) (Max) @ Vds	235 @ 25V	290 @ 25V	350 @ 25V	pF
Power Dissipation (Max)	2.2 (Tc)	2 (Tc)	3 (Ta)	W
Operating Temperature Range	−55 to 150	−55 to 150	−55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	—
Package	SOT-223-4	SOT-223-4	SOT-223-3	—
Product Status	Obsolete	Active	Active	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

FQT7N10LTF (onsemi) is the primary substitute for the IRLM110ATF. This device is manufactured by the same supplier as the original part, ensuring design continuity and process consistency. The FQT7N10LTF is rated for 1.7A continuous drain current, exceeding the 1.5A requirement of the IRLM110ATF. The part is in active product status with high inventory availability (45,400 pieces), providing reliable long-term supply. The FQT7N10LTF is RoHS3 compliant and REACH unaffected, meeting current regulatory requirements. Gate charge is reduced to 6 nC at 5V compared to 8 nC for the original part, offering improved switching efficiency.

ZVN4310GTA (Diodes Incorporated) serves as a secondary substitute option. This device is manufactured by Diodes Incorporated and is rated for 1.67A continuous drain current, also exceeding the 1.5A specification. The ZVN4310GTA is in active product status with substantial inventory (25,720 pieces). The part is RoHS3 compliant and REACH unaffected. The ZVN4310GTA features higher power dissipation capability (3W) compared to the original part (2.2W), providing additional thermal margin in applications with elevated ambient temperatures. The gate threshold voltage is specified at 3V maximum, which is within acceptable limits for standard gate drive circuits.

Both substitute parts maintain the required 100V Vdss rating, operate across the −55°C to 150°C temperature range, and are housed in compatible SOT-223 surface mount packages. Selection between FQT7N10LTF and ZVN4310GTA depends on supply chain preferences, inventory requirements, and specific application thermal considerations.

Frequently Asked Questions (FAQ)

Q: Can the FQT7N10LTF directly replace the IRLM110ATF in existing designs?

A: Yes. The FQT7N10LTF is electrically and mechanically compatible with the IRLM110ATF. Both devices are rated for 100V Vdss, operate across −55°C to 150°C, and use SOT-223-4 surface mount packaging. The FQT7N10LTF provides higher continuous drain current (1.7A versus 1.5A) and lower gate charge (6 nC versus 8 nC), making it a direct functional replacement without circuit modifications.

Q: What is the difference between the SOT-223-4 and SOT-223-3 packages?

A: The SOT-223-4 package includes four leads (Gate, Drain, Source, and an additional Source lead for improved thermal performance), while the SOT-223-3 package contains three leads (Gate, Drain, and Source). Both packages share the same footprint dimensions and are mechanically compatible on standard PCB layouts. The ZVN4310GTA uses SOT-223-3 packaging and is functionally compatible with SOT-223-4 designs.

Q: Why is the IRLM110ATF classified as obsolete?

A: The IRLM110ATF is no longer in active production by onsemi. Obsolete status indicates the manufacturer has discontinued the product line. Substitute parts FQT7N10LTF and ZVN4310GTA are in active production status, ensuring continued availability and support for new designs and production runs.

Q: Are there any compliance or regulatory differences between the IRLM110ATF and its substitutes?

A: No significant differences exist. All three parts are REACH unaffected and carry EAR99 export classification. The FQT7N10LTF and ZVN4310GTA are RoHS3 compliant, meeting current environmental regulations. All parts maintain MSL 1 (Unlimited) moisture sensitivity rating, requiring no special handling during storage or assembly.

Q: How do the Rds On specifications compare across the three parts?

A: The IRLM110ATF specifies 440 mOhm maximum at 750mA and 5V gate voltage. The FQT7N10LTF specifies 350 mOhm maximum at 850mA and 10V gate voltage, indicating lower on-resistance at higher gate drive voltage. The ZVN4310GTA specifies 540 mOhm maximum at 3.3A and 10V gate voltage. Lower Rds On values reduce power dissipation in switching applications. Selection depends on the specific gate drive voltage available in the application circuit.

Q: What inventory status should be considered when selecting a substitute?

A: The FQT7N10LTF has 45,400 pieces in stock, providing the highest inventory availability. The ZVN4310GTA has 25,720 pieces in stock. Both parts offer sufficient supply for production requirements. Inventory levels should be verified with the component distributor at the time of procurement, as availability changes based on market demand and manufacturing schedules.

Q: Can the ZVN4310GTA be used in applications requiring the lowest gate charge?

A: Gate charge data for the ZVN4310GTA is not provided in the available specifications. The FQT7N10LTF specifies 6 nC at 5V, which is lower than the IRLM110ATF at 8 nC. For applications where gate charge is a critical parameter, the FQT7N10LTF is the recommended choice based on available technical data.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message