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IRLL2703 N-Channel MOSFET 30V 3.9A SOT-223 Equivalent & Substitute Parts
Part Overview
The IRLL2703 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in the SOT-223 package. This device operates at 30V drain-to-source voltage with a continuous drain current rating of 3.9A at 25°C and a maximum power dissipation of 1W. The IRLL2703 is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support, production continuity, and component sourcing.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 3.9 | A |
| Rds On (Max) @ 10V Vgs | 45 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 2.4 | V |
| Power Dissipation (Max) | 1 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | SOT-223 | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution of the IRLL2703 is determined by strict electrical and mechanical compatibility criteria. The following parameters must be matched or exceeded in substitute devices:
Critical Matching Parameters:
- Drain-to-Source Voltage (Vdss): Must be ≥ 30V
- Package Type: Must be SOT-223 (TO-261-4, TO-261AA)
- Mounting Type: Must be Surface Mount
- FET Type: Must be N-Channel MOSFET
Performance Parameters (Minimum Requirements):
- Continuous Drain Current (Id): Must support ≥ 3.9A at 25°C
- Operating Temperature Range: Must encompass -55°C to 150°C
- Gate Threshold Voltage: Must be compatible with existing gate drive circuits
The identified substitute parts STN4NF03L and NDT451AN meet these criteria while offering improved electrical performance characteristics, including higher current ratings and lower on-resistance values.
Parameter Comparison
| Parameter | IRLL2703 (Infineon) | STN4NF03L (STMicroelectronics) | NDT451AN (onsemi) |
|---|---|---|---|
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V |
| Continuous Drain Current (Id) @ 25°C | 3.9 A (Ta) | 6.5 A (Tc) | 7.2 A (Ta) |
| Rds On (Max) @ 10V Vgs | 45 mOhm @ 3.9A | 50 mOhm @ 2A | 35 mOhm @ 7.2A |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 2.4 V | 1 V | 3 V |
| Power Dissipation (Max) | 1 W (Ta) | 3.3 W (Tc) | 3 W (Ta) |
| Operating Temperature Range | -55 to 150 °C | -55 to 150 °C | -65 to 150 °C |
| Package Type | SOT-223 | SOT-223 | SOT-223-4 |
| Vgs (Max) | ±16 V | ±16 V | ±20 V |
| Product Status | Obsolete | Active | Active |
| RoHS Status | Non-compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
STN4NF03L (STMicroelectronics): This substitute provides a direct functional replacement with improved specifications. The device maintains the 30V Vdss rating and SOT-223 package compatibility while offering 6.5A continuous drain current, exceeding the IRLL2703 requirement of 3.9A. The STN4NF03L is classified as Active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. This part is suitable for applications requiring standard gate drive voltage compatibility.
NDT451AN (onsemi): This substitute offers the highest performance upgrade among available options, with 7.2A continuous drain current and superior on-resistance characteristics (35 mOhm at 10V). The NDT451AN maintains 30V Vdss and SOT-223-4 package compatibility. The device features an extended operating temperature range (-65°C to 150°C) and higher maximum gate voltage rating (±20V). NDT451AN is Active product status with ROHS3 compliance. This part is recommended for applications with higher current demands or requiring enhanced thermal performance.
Both substitute parts are available in high inventory quantities and support equivalent PCB footprints, enabling direct board-level substitution without layout modifications.
Frequently Asked Questions (FAQ)
Q: Can the STN4NF03L or NDT451AN be used as direct drop-in replacements for the IRLL2703?
A: Yes, both substitute parts are compatible for direct board-level replacement. All three devices share the SOT-223 package footprint (TO-261-4, TO-261AA) and identical pin configuration. No PCB layout modifications are required.
Q: What is the primary reason for substituting the IRLL2703?
A: The IRLL2703 is classified as obsolete. The identified substitute parts (STN4NF03L and NDT451AN) are Active product status devices with confirmed long-term availability and manufacturing support.
Q: Are there differences in gate drive requirements between these parts?
A: Gate threshold voltages differ: IRLL2703 (2.4V), STN4NF03L (1V), and NDT451AN (3V). All three devices operate within the ±16V to ±20V gate voltage range. Existing gate drive circuits designed for the IRLL2703 will function with both substitutes, though gate drive timing characteristics may vary slightly due to different threshold voltages and gate charge specifications.
Q: Which substitute part offers the best thermal performance?
A: The NDT451AN provides superior thermal characteristics with 3W maximum power dissipation compared to the IRLL2703 (1W) and STN4NF03L (3.3W). The NDT451AN also features lower on-resistance (35 mOhm at 10V), reducing heat generation in high-current applications.
Q: Are both substitute parts RoHS compliant?
A: Yes. Both STN4NF03L and NDT451AN are ROHS3 compliant. The original IRLL2703 is RoHS non-compliant, making substitution necessary for applications requiring regulatory compliance.
Q: What is the difference between Ta and Tc temperature specifications?
A: Ta refers to ambient temperature, while Tc refers to case temperature. The IRLL2703 and NDT451AN use Ta specifications, while STN4NF03L uses Tc. Both measurement methods are valid; Tc typically represents more conservative thermal conditions.
Q: Can I use these parts interchangeably in the same design?
A: Yes, all three parts are electrically and mechanically compatible for the same application. However, NDT451AN offers superior performance margins due to higher current rating and lower on-resistance, making it the preferred choice for new designs or applications requiring enhanced performance headroom.
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