IRLL110 N-Channel MOSFET 100V 1.5A SOT-223 Equivalent & Substitute Parts

Part Overview

The IRLL110 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 1.5A continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. The IRLL110 remains available in inventory (1565 pcs), but active alternatives with comparable or superior electrical characteristics are available from current manufacturers.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	1.5	A
On-State Resistance (Rds On Max)	540	mOhm
Gate Threshold Voltage (Vgs th Max)	2	V
Gate Charge (Qg Max)	6.1	nC
Input Capacitance (Ciss Max)	250	pF
Power Dissipation (Max)	2 (Ta), 3.1 (Tc)	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	SOT-223 (TO-261-4, TO-261AA)	—

Substitute Part Grouping Explanation

Substitution of the IRLL110 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
N-Channel MOSFET technology
Surface mount SOT-223 package compatibility
Continuous drain current rating: ≥1.5A
Operating temperature range: -55°C to 150°C minimum

Acceptable Variation Parameters:

On-state resistance (Rds On): Substitute parts may exhibit lower (improved) Rds On values
Gate threshold voltage (Vgs th): Substitute parts may have different threshold specifications within standard operating ranges
Gate charge and input capacitance: Variations acceptable if within typical MOSFET design tolerances
Power dissipation: Substitute parts with equal or higher ratings are acceptable

The two substitute parts listed (ZVN4310GTA and ZXMN10A11GTA) meet all mandatory matching criteria and are sourced from active manufacturers with current product status and RoHS3 compliance.

Parameter Comparison

Parameter	IRLL110 (Vishay)	ZVN4310GTA (Diodes Inc.)	ZXMN10A11GTA (Diodes Inc.)	Unit
FET Type	N-Channel	N-Channel	N-Channel	—
Vdss	100	100	100	V
Id @ 25°C	1.5 (Tc)	1.67 (Ta)	1.7 (Ta)	A
Rds On (Max)	540 @ 900mA, 5V	540 @ 3.3A, 10V	350 @ 2.6A, 10V	mOhm
Vgs(th) (Max)	2 @ 250µA	3 @ 1mA	4 @ 250µA	V
Gate Charge (Qg Max)	6.1 @ 5V	—	5.4 @ 10V	nC
Ciss (Max)	250 @ 25V	350 @ 25V	274 @ 50V	pF
Power Dissipation (Max)	2 (Ta), 3.1 (Tc)	3 (Ta)	2 (Ta)	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	°C
Package	SOT-223	SOT-223-3	SOT-223-3	—
Product Status	Obsolete	Active	Active	—
RoHS Status	Non-compliant	RoHS3 Compliant	RoHS3 Compliant	—

Engineering Selection Recommendations

ZVN4310GTA (Diodes Incorporated): This substitute provides equivalent voltage and current ratings with improved continuous drain current (1.67A vs. 1.5A). The device maintains identical on-state resistance specification (540 mOhm) and is RoHS3 compliant with active product status. Higher input capacitance (350 pF vs. 250 pF) may affect switching speed in gate-drive-sensitive applications. Inventory availability is substantial (25,720 pcs).

ZXMN10A11GTA (Diodes Incorporated): This substitute offers superior on-state resistance performance (350 mOhm vs. 540 mOhm), resulting in reduced power dissipation and improved efficiency. Continuous drain current rating (1.7A) exceeds the IRLL110 specification. Gate threshold voltage is higher (4V vs. 2V), which may require adjustment in low-voltage gate-drive circuits. RoHS3 compliance and active product status are confirmed. Inventory availability is high (24,200 pcs).

Both substitutes are manufactured by Diodes Incorporated, a qualified active supplier with established distribution channels. Selection between the two depends on specific application requirements: ZVN4310GTA for direct parameter matching, or ZXMN10A11GTA for improved efficiency and lower on-state resistance.

Frequently Asked Questions (FAQ)

Q: Can the ZVN4310GTA or ZXMN10A11GTA be used as direct drop-in replacements for the IRLL110?

A: Both devices are pin-compatible within the SOT-223 package family and share identical voltage and current ratings. PCB layout modifications are not required. However, gate-drive circuit parameters may require adjustment due to differences in gate threshold voltage and input capacitance.

Q: What is the primary reason the IRLL110 is classified as obsolete?

A: The IRLL110 is an older generation device from Vishay Siliconix. Diodes Incorporated's ZVN4310GTA and ZXMN10A11GTA represent current-generation alternatives with improved performance characteristics and active manufacturer support.

Q: How do the on-state resistance values affect circuit performance?

A: On-state resistance (Rds On) directly determines conduction losses. The ZXMN10A11GTA exhibits 35% lower Rds On (350 mOhm vs. 540 mOhm), resulting in reduced power dissipation and heat generation. The ZVN4310GTA maintains equivalent Rds On specification.

Q: Are there package compatibility concerns between SOT-223 and SOT-223-3 variants?

A: Both SOT-223 and SOT-223-3 designations refer to the same physical package footprint (TO-261-4, TO-261AA). Pin assignments are identical. No PCB redesign is necessary.

Q: What is the significance of RoHS3 compliance for the substitute parts?

A: RoHS3 compliance indicates conformance to current environmental and hazardous substance restrictions. The IRLL110 is RoHS non-compliant, while both substitutes are RoHS3 compliant, making them suitable for applications with regulatory compliance requirements.

Q: How do gate threshold voltage differences impact circuit design?

A: The IRLL110 has a lower gate threshold voltage (2V vs. 3V or 4V for substitutes). Applications using low-voltage gate-drive circuits may require higher gate-source voltage to ensure full device saturation with the substitute parts. Verify gate-drive voltage specifications against datasheet requirements.

Q: Which substitute part offers the best overall performance improvement?

A: The ZXMN10A11GTA provides superior on-state resistance (350 mOhm) and lower gate charge (5.4 nC), resulting in improved efficiency and faster switching characteristics. The ZVN4310GTA maintains closer parameter alignment to the original IRLL110 specification.

Q: Are both substitute parts available in the same packaging options?

A: Both ZVN4310GTA and ZXMN10A11GTA are supplied in Cut Tape (CT) packaging. Inventory levels are comparable (25,720 pcs and 24,200 pcs respectively), ensuring supply continuity.

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