IRLL024Z N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRLL024Z is an N-Channel enhancement-mode MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 5A continuous drain current in a surface-mount SOT-223 package. This device is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. The IRLL024Z operates across a wide temperature range from -55°C to 150°C and is suitable for switching applications requiring moderate voltage and current ratings with low on-resistance characteristics.

Substiute Parts

IRLL024Z

Infineon TechnologiesIn Stock: 2664IRLL024Z Datasheet

Current PartRFQ

PJW5N06A_R2_00001

Panjit International Inc.In Stock: 1038PJW5N06A_R2_00001 Datasheet

MFR RecommendedRFQ

STN3NF06L

STMicroelectronicsIn Stock: 72493STN3NF06L Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRLL024Z are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

• FET Type: N-Channel enhancement-mode MOSFET
• Package: SOT-223 surface-mount configuration (TO-261-4, TO-261AA)
• Drain-to-Source Voltage (Vdss): Minimum 55V (substitutes rated 60V are acceptable as they exceed the original specification)
• Continuous Drain Current (Id): Minimum 4A at rated temperature (original rated 5A)
• Operating Temperature Range: -55°C to 150°C
• Gate Voltage (Vgs Max): ±16V or higher

Acceptable Parameter Variations:

• On-Resistance (Rds On): Substitutes may have higher values if within acceptable application limits
• Gate Charge (Qg): Lower values are acceptable and beneficial
• Power Dissipation: Higher ratings provide design margin
• Threshold Voltage (Vgs(th)): Minor variations acceptable within ±0.5V
• Input Capacitance (Ciss): Variations acceptable within ±20%

The two identified substitutes meet these criteria while offering improved specifications in certain areas, including higher voltage ratings and enhanced power dissipation capabilities.

Parameter Comparison

Engineering Selection Recommendations

PJW5N06A_R2_00001 (Panjit International Inc.)

This substitute provides the closest electrical match to the IRLL024Z with a 60V Vdss rating and 5A continuous drain current capability. The device maintains the same operating temperature range and SOT-223 package configuration. The PJW5N06A_R2_00001 offers improved power dissipation (3.1W versus 1W) and lower gate charge (9.3nC versus 11nC), providing design margin for switching applications. The part is ROHS3 compliant and currently in active production status with 996 units in stock. Gate threshold voltage is slightly lower at 2.5V, which may require verification in gate drive circuits designed for the original 3V threshold.

STN3NF06L (STMicroelectronics)

This substitute is part of the STripFET™ II series and offers a 60V Vdss rating with 4A continuous drain current in the same SOT-223 package. The STN3NF06L provides the highest power dissipation rating (3.3W) and lowest input capacitance (340pF), making it suitable for applications requiring minimal switching losses. The device is ROHS3 compliant and in active production with extensive inventory availability (72,446 units in stock). The on-resistance specification is measured at lower current (1.5A versus 3A), and the continuous drain current is rated at 4A, which represents a 20% reduction from the original IRLL024Z specification. This part is suitable for applications where the 4A rating is sufficient.

Selection Criteria:

• For applications requiring full 5A continuous current capability: PJW5N06A_R2_00001
• For applications with lower current requirements or where switching losses are critical: STN3NF06L
• Both substitutes provide superior power dissipation and RoHS compliance compared to the obsolete IRLL024Z
• Both maintain identical operating temperature range and package form factor

Frequently Asked Questions (FAQ)

Q: Can the PJW5N06A_R2_00001 or STN3NF06L be used as direct replacements for the IRLL024Z in existing designs?

A: Both parts are mechanically and electrically compatible as substitutes. The SOT-223 package pinout is identical, and both devices operate within the same temperature range. However, gate threshold voltage differences (2.5V to 2.8V versus 3V) may require verification in gate drive circuits. The higher voltage ratings (60V versus 55V) provide additional design margin. Functional testing is recommended to confirm performance in the specific application circuit.

Q: What are the key differences in on-resistance between these parts?

A: The IRLL024Z specifies 60mOhm at 3A and 10V gate voltage. The PJW5N06A_R2_00001 specifies 75mOhm at 5A and 10V, while the STN3NF06L specifies 100mOhm at 1.5A and 10V. On-resistance increases with temperature and decreases with higher gate voltage. The PJW5N06A_R2_00001 offers the closest on-resistance performance at higher current levels.

Q: Why is the continuous drain current different between the STN3NF06L (4A) and the original IRLL024Z (5A)?

A: The STN3NF06L is rated for 4A continuous drain current at the specified temperature conditions. This represents a 20% reduction from the original 5A specification. Applications requiring the full 5A capability should use the PJW5N06A_R2_00001, which maintains the 5A rating. The STN3NF06L is suitable for applications where peak current requirements do not exceed 4A.

Q: Are there RoHS compliance differences between these parts?

A: The original IRLL024Z is RoHS non-compliant. Both substitute parts (PJW5N06A_R2_00001 and STN3NF06L) are ROHS3 compliant, meeting current environmental regulations. This is a significant advantage for new designs and applications subject to RoHS requirements.

Q: How do gate charge specifications affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRLL024Z specifies 11nC at 5V, while the PJW5N06A_R2_00001 specifies 9.3nC at 10V and the STN3NF06L specifies 9nC at 5V. Lower gate charge reduces switching losses and allows faster switching speeds. Both substitutes offer lower gate charge, which may improve efficiency in high-frequency switching applications.

Q: What is the significance of input capacitance (Ciss) differences?

A: Input capacitance affects gate drive requirements and switching speed. The IRLL024Z specifies 380pF at 25V. The PJW5N06A_R2_00001 specifies 509pF at 15V (higher capacitance), while the STN3NF06L specifies 340pF at 25V (lower capacitance). Higher input capacitance requires more gate charge and may slow switching transitions. The STN3NF06L offers the lowest input capacitance, beneficial for high-frequency applications.

Q: Can these parts be used interchangeably in production?

A: Both substitutes are suitable for production use, but design verification is required. The PJW5N06A_R2_00001 provides the closest electrical match with 5A continuous current capability. The STN3NF06L offers superior availability (72,446 units in stock) but is limited to 4A continuous current. Production selection should be based on specific application current requirements and gate drive circuit compatibility.

Q: What is the moisture sensitivity level (MSL) for these parts?

A: All three parts (IRLL024Z, PJW5N06A_R2_00001, and STN3NF06L) are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. These parts can be stored and handled without special moisture control measures.