IRLL014TR N-Channel 60V 2.7A MOSFET Equivalent & Substitute Parts

Part Overview

The IRLL014TR is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 2.7A continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to support ongoing design requirements, procurement continuity, and system maintenance where the original part is no longer available through standard distribution channels.

Substiute Parts

IRLL014TR
Vishay SiliconixIn Stock: 2233IRLL014TR Datasheet
IRLL014TR
Current Part
IRLL014TRPBF
Vishay SiliconixIn Stock: 15548IRLL014TRPBF Datasheet
IRLL014TRPBF
Parametric Equivalent
IRLL014TRPBF-BE3
Vishay SiliconixIn Stock: 4172IRLL014TRPBF-BE3 Datasheet
IRLL014TRPBF-BE3
Parametric Equivalent
94-3316
Infineon TechnologiesIn Stock: 87894-3316 Datasheet
94-3316
MFR Recommended
IRLL014NTRPBF
Infineon TechnologiesIn Stock: 50408IRLL014NTRPBF Datasheet
IRLL014NTRPBF
MFR Recommended
NDT014
onsemiIn Stock: 40821NDT014 Datasheet
NDT014
MFR Recommended
NDT014L
onsemiIn Stock: 40955NDT014L Datasheet
NDT014L
MFR Recommended
NTF3055-100T1G
onsemiIn Stock: 30765NTF3055-100T1G Datasheet
NTF3055-100T1G
MFR Recommended
STN3NF06L
STMicroelectronicsIn Stock: 72493STN3NF06L Datasheet
STN3NF06L
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 2.7 A
Rds On (Max) @ Id, Vgs 200 mOhm @ 1.6A, 5V
Gate Threshold Voltage (Vgs(th)) @ Id 2 V @ 250µA
Gate Charge (Qg) @ Vgs 8.4 nC @ 5V
Input Capacitance (Ciss) @ Vds 400 pF @ 25V
Power Dissipation (Max) 2 (Ta), 3.1 (Tc) W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package SOT-223 (TO-261-4, TO-261AA)
RoHS Status Non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the IRLL014TR are grouped based on electrical and mechanical compatibility within the following criteria:

Primary Substitution Criteria:

  • FET Type: N-Channel topology
  • Drain to Source Voltage (Vdss): 55V minimum (IRLL014TR rated 60V)
  • Continuous Drain Current (Id): 2A minimum at 25°C
  • Package: SOT-223 surface mount (TO-261-4, TO-261AA)
  • Mounting Type: Surface Mount
  • Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

  • Rds On (Max): 200 mOhm or lower at rated conditions
  • Gate Threshold Voltage (Vgs(th)): 2V to 4V range
  • Gate Charge (Qg): 5 nC to 22 nC range
  • Input Capacitance (Ciss): 155 pF to 455 pF range

Substitutes are classified into two categories: Parametric Equivalents (identical electrical specifications and active product status) and Manufacturer Recommended Alternatives (functionally compatible with minor parameter variations and active product status).

Parameter Comparison

Parameter IRLL014TR IRLL014TRPBF IRLL014TRPBF-BE3 94-3316 IRLL014NTRPBF NDT014 NDT014L NTF3055-100T1G STN3NF06L
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies onsemi onsemi onsemi STMicroelectronics
Product Status Obsolete Active Active Active Active Active Active Active Active
Vdss (V) 60 60 60 55 55 60 60 60 60
Id @ 25°C (A) 2.7 (Tc) 2.7 (Tc) 2.7 (Tc) 2 (Ta) 2 (Ta) 2.7 (Ta) 2.8 (Ta) 3 (Ta) 4 (Tc)
Rds On (Max) @ Id, Vgs (mOhm) 200 @ 1.6A, 5V 200 @ 1.6A, 5V 200 @ 1.6A, 5V 140 @ 2A, 10V 140 @ 2A, 10V 200 @ 1.6A, 10V 160 @ 3.4A, 10V 110 @ 1.5A, 10V 100 @ 1.5A, 10V
Vgs(th) @ Id (V) 2 @ 250µA 2 @ 250µA 2 @ 250µA 2 @ 250µA 2 @ 250µA 4 @ 250µA 3 @ 250µA 4 @ 250µA 2.8 @ 250µA
Qg @ Vgs (nC) 8.4 @ 5V 8.4 @ 5V 8.4 @ 5V 14 @ 10V 14 @ 10V 11 @ 10V 5 @ 4.5V 22 @ 10V 9 @ 5V
Ciss @ Vds (pF) 400 @ 25V 400 @ 25V 400 @ 25V 230 @ 25V 230 @ 25V 155 @ 25V 214 @ 30V 455 @ 25V 340 @ 25V
Power Dissipation (Max) (W) 2 (Ta), 3.1 (Tc) 2 (Ta), 3.1 (Tc) 2 (Ta), 3.1 (Tc) Not specified 1 (Ta) 3 (Ta) 3 (Ta) 1.3 (Ta) 3.3 (Tc)
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -65 to 150 -65 to 150 -55 to 175 -55 to 150
Package SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223-4 SOT-223-4 SOT-223 SOT-223
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Parametric Equivalents (Highest Compatibility):

IRLL014TRPBF and IRLL014TRPBF-BE3 are parametric equivalents of the IRLL014TR with identical electrical specifications. Both parts are manufactured by Vishay Siliconix and maintain the same Vdss (60V), Id (2.7A), Rds On (200 mOhm), and thermal characteristics. The primary distinction is packaging format: IRLL014TRPBF is supplied in Cut Tape and Digi-Reel format, while IRLL014TRPBF-BE3 is supplied in Tape & Reel format. Both are ROHS3 compliant and carry active product status, providing long-term availability assurance. These parts are direct functional replacements with no design modifications required.

Manufacturer Recommended Alternatives (Functional Compatibility):

NDT014 (onsemi) and NDT014L (onsemi) maintain the 60V Vdss rating and 2.7A to 2.8A drain current specifications. NDT014L offers improved Rds On performance (160 mOhm) and lower gate charge (5 nC), resulting in reduced switching losses. Both onsemi parts are ROHS3 compliant with active product status and extended operating temperature range (-65°C to 150°C).

NTF3055-100T1G (onsemi) provides 60V Vdss with 3A drain current and superior Rds On performance (110 mOhm), enabling higher current handling capability. This part is suitable for applications requiring enhanced thermal performance and is rated to 175°C maximum junction temperature.

STN3NF06L (STMicroelectronics) offers 60V Vdss with 4A drain current and the lowest Rds On specification (100 mOhm) among all substitutes. This part delivers superior thermal performance (3.3W at Tc) and is designated as STripFET™ II technology. All thermal and electrical parameters exceed IRLL014TR specifications.

IRLL014NTRPBF (Infineon Technologies) operates at reduced Vdss (55V) and Id (2A), with lower power dissipation (1W). This part is suitable only for applications where the 55V voltage rating is acceptable and current requirements do not exceed 2A.

94-3316 (Infineon Technologies) similarly operates at 55V Vdss with 2A drain current. This part is not recommended for direct replacement in designs requiring the full 60V rating or 2.7A current capability.

Compliance and Availability:

All recommended substitutes carry ROHS3 compliance status and active product status, ensuring long-term procurement availability and regulatory compliance. The IRLL014TR is classified as obsolete; therefore, transition to an active equivalent is necessary for new designs and ongoing production support.

Frequently Asked Questions (FAQ)

Q: Can IRLL014TRPBF directly replace IRLL014TR without circuit modifications?

A: Yes. IRLL014TRPBF is a parametric equivalent with identical electrical and thermal specifications. The only difference is packaging format (Cut Tape & Digi-Reel versus Tape & Reel). No circuit modifications are required.

Q: What is the difference between IRLL014TRPBF and IRLL014TRPBF-BE3?

A: Both parts are parametric equivalents with identical electrical specifications. IRLL014TRPBF is supplied in Cut Tape and Digi-Reel format, while IRLL014TRPBF-BE3 is supplied in Tape & Reel format. Selection depends on assembly equipment compatibility and procurement requirements.

Q: Can NDT014 or NDT014L replace IRLL014TR?

A: Yes, with design verification. Both onsemi parts maintain 60V Vdss and 2.7A to 2.8A drain current ratings. NDT014L offers improved Rds On (160 mOhm versus 200 mOhm) and lower gate charge (5 nC versus 8.4 nC), resulting in reduced switching losses. Gate threshold voltage differs (3V to 4V versus 2V), which may affect gate drive circuit timing. Extended operating temperature range (-65°C to 150°C) provides additional margin.

Q: Is STN3NF06L suitable as a replacement?

A: Yes. STN3NF06L exceeds IRLL014TR specifications in all critical parameters: 60V Vdss, 4A drain current (versus 2.7A), and superior Rds On performance (100 mOhm versus 200 mOhm). This part is suitable for applications requiring enhanced current handling and thermal performance. No design modifications are required; however, the improved performance characteristics should be verified against thermal management and circuit protection requirements.

Q: Why are IRLL014NTRPBF and 94-3316 not recommended as primary substitutes?

A: Both parts operate at reduced Vdss (55V versus 60V) and reduced drain current (2A versus 2.7A). These parts are suitable only for applications where the 55V voltage rating is acceptable and current requirements do not exceed 2A. For designs requiring the full 60V rating or 2.7A current capability, these parts are not suitable.

Q: What is the significance of RoHS3 compliance?

A: ROHS3 compliance indicates conformance to the Restriction of Hazardous Substances Directive, which restricts the use of specific hazardous materials in electrical and electronic equipment. All recommended active substitutes carry ROHS3 compliance, ensuring regulatory compliance for new designs and production. The original IRLL014TR is non-compliant; therefore, transition to a compliant equivalent is necessary for regulatory adherence.

Q: Are all substitute parts available in the same SOT-223 package?

A: Yes. All substitute parts are supplied in SOT-223 surface mount package (TO-261-4, TO-261AA designation). Physical footprint and pin configuration are identical, enabling direct PCB layout compatibility without modification.

Q: What is the impact of different gate charge (Qg) specifications?

A: Gate charge affects switching speed and gate drive circuit power requirements. IRLL014TR specifies 8.4 nC at 5V. Substitutes range from 5 nC (NDT014L) to 22 nC (NTF3055-100T1G). Lower gate charge enables faster switching and reduced gate drive power consumption. Higher gate charge requires increased gate drive current or extended switching time. Gate drive circuit design should be verified to ensure adequate drive capability for the selected substitute.

Q: What is the impact of different Rds On specifications?

A: Rds On (on-state drain-to-source resistance) directly affects conduction losses and thermal performance. IRLL014TR specifies 200 mOhm at 1.6A, 5V. Lower Rds On values (100 to 160 mOhm) reduce conduction losses and heat dissipation, improving efficiency and thermal performance. Higher Rds On values increase conduction losses. Thermal management and circuit protection requirements should be verified against the selected substitute's Rds On specification.

Q: Can I use a substitute with higher drain current rating?

A: Yes. Substitutes with higher drain current ratings (such as STN3NF06L at 4A or NTF3055-100T1G at 3A) are suitable for applications where the original 2.7A rating is adequate. Higher current ratings provide design margin and improved thermal performance. However, circuit protection and thermal management should be verified to ensure the design does not exceed the substitute's absolute maximum ratings.

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