IRLI640GPBF N-Channel MOSFET 200V 9.9A TO-220-3 Equivalent & Substitute Parts

Part Overview

The IRLI640GPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 9.9A continuous drain current at 25°C. This device is housed in a TO-220-3 through-hole package and is designed for general-purpose switching and amplification applications. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters while maintaining compatible package configurations and operating specifications. Substitution becomes necessary when the primary part experiences supply constraints, obsolescence, or when design requirements permit operation with enhanced electrical characteristics.

Key Parameters

Parameter	IRLI640GPBF Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	9.9	A (Tc)
Rds On (Max) @ Id, Vgs	180 mOhm @ 5.9A, 5V	—
Gate Threshold Voltage Vgs(th) (Max) @ Id	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	66	nC @ 10V
Power Dissipation (Max)	40	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Product Status	Active	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRLI640GPBF is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Continuous Drain Current (Id): Must equal or exceed 9.9A at 25°C
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuitry
On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 180 mOhm are acceptable
Power Dissipation: Must support thermal requirements of the application

Package and Mechanical Compatibility:

Mounting Type: Through-hole configuration required
Package Family: TO-220-3 variants (TO-220-3, TO-220F-3, TO-220AB, TO-220FM, TO-220FP) are mechanically and electrically compatible
Pin Configuration: Standard TO-220 three-pin layout maintained across all substitutes

Compliance and Status:

RoHS3 compliance required for environmental standards
Active or recently active product status preferred for supply continuity
Operating temperature range: -55°C to 150°C minimum

Five substitute parts meet these criteria with varying performance enhancements in current rating, gate charge, and power dissipation characteristics.

Parameter Comparison

Parameter	IRLI640GPBF	FQPF19N20	FQPF19N20C	IRF200B211	IRLS640A	RCX160N20	STF19NF20
Manufacturer	Vishay Siliconix	Fairchild Semiconductor	onsemi	Infineon Technologies	onsemi	Rohm Semiconductor	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	200	200	200	200	200	200	200
Id @ 25°C (A)	9.9	11.8	19	12	9.8	16	15
Rds On (Max) (mOhm)	180 @ 5.9A, 5V	150 @ 5.9A, 10V	170 @ 9.5A, 10V	170 @ 7.2A, 10V	180 @ 4.9A, 5V	180 @ 8A, 10V	160 @ 7.5A, 10V
Vgs(th) (Max) (V)	2 @ 250µA	5 @ 250µA	4 @ 250µA	4.9 @ 50µA	2 @ 250µA	5.25 @ 1mA	4 @ 250µA
Gate Charge Qg (Max) (nC)	66 @ 10V	40 @ 10V	53 @ 10V	23 @ 10V	56 @ 5V	26 @ 10V	24 @ 10V
Power Dissipation (Max) (W)	40	50	43	80	40	40	25
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 150	150	-55 to 150
Package / Case	TO-220-3	TO-220F-3	TO-220F-3	TO-220AB	TO-220F-3	TO-220FM	TO-220FP
Product Status	Active	Active	Active	Active	Obsolete	Active	Active
RoHS3 Compliant	Yes	Not specified	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Compliance):

The FQPF19N20C (onsemi) and IRF200B211 (Infineon Technologies) are the preferred substitutes. Both devices maintain Active product status with RoHS3 compliance. The FQPF19N20C provides 19A continuous drain current with 43W power dissipation, exceeding the IRLI640GPBF specifications while maintaining compatible gate threshold voltage (4V). The IRF200B211 delivers 12A continuous current with superior 80W power dissipation capability and reduced gate charge (23 nC), enabling faster switching performance. Both support the full -55°C to 150°C operating range.

Secondary Substitutes (Active Status, Enhanced Performance):

The RCX160N20 (Rohm Semiconductor) and STF19NF20 (STMicroelectronics) are Active alternatives with enhanced current ratings (16A and 15A respectively). The RCX160N20 maintains 40W power dissipation matching the original part. The STF19NF20 offers reduced gate charge (24 nC) and lower on-state resistance (160 mOhm), improving switching efficiency.

Compatibility Consideration:

The FQPF19N20 (Fairchild Semiconductor) is functionally equivalent but RoHS3 compliance status is not specified in available documentation. This part should be evaluated against specific procurement requirements.

Obsolete Alternative:

The IRLS640A (onsemi) is electrically equivalent with nearly identical specifications (9.8A continuous current, 180 mOhm Rds On, 40W power dissipation) but carries Obsolete product status. This part is suitable only when existing inventory is available and long-term supply is not required.

Frequently Asked Questions (FAQ)

Q: Can I use FQPF19N20C as a direct replacement for IRLI640GPBF?

A: Yes. The FQPF19N20C meets all critical electrical parameters: 200V Vdss, 19A continuous drain current (exceeds 9.9A requirement), compatible gate threshold voltage (4V), and TO-220F-3 package (mechanically compatible with TO-220-3). Both devices support -55°C to 150°C operation and maintain RoHS3 compliance. The higher current rating and lower gate charge provide performance enhancement without compatibility issues.

Q: What is the difference between TO-220-3, TO-220F-3, TO-220AB, TO-220FM, and TO-220FP packages?

A: All variants are mechanically and electrically compatible three-pin through-hole packages with identical pin spacing and electrical connections. Differences exist in tab isolation and thermal characteristics. TO-220-3 features an isolated tab; TO-220F-3 and TO-220FM include full-pack isolation; TO-220AB and TO-220FP have standard configurations. Pin-to-pin compatibility is maintained across all variants for direct substitution.

Q: Does gate threshold voltage (Vgs(th)) affect substitutability?

A: Gate threshold voltage affects gate drive circuit design. The IRLI640GPBF specifies 2V Vgs(th), while most substitutes range from 4V to 5.25V. Higher threshold voltages require proportionally higher gate drive voltage to achieve full on-state conduction. If existing gate drive circuitry is optimized for 2V threshold, substitutes with 4V or higher thresholds may require gate drive circuit modification. The IRLS640A maintains 2V threshold, matching the original specification exactly.

Q: Why does IRF200B211 have 80W power dissipation versus 40W for IRLI640GPBF?

A: Power dissipation rating reflects the device's thermal management capability under specified conditions. The IRF200B211's higher 80W rating indicates superior thermal performance, not a requirement for higher power operation. In applications limited to 40W dissipation, the IRF200B211 operates well within its thermal envelope, providing additional design margin and reliability.

Q: Is IRLS640A suitable for new designs?

A: No. IRLS640A carries Obsolete product status, indicating discontinued manufacturing and limited future availability. While electrically equivalent to IRLI640GPBF, it should be used only when existing inventory is available and supply continuity is not required. New designs should specify Active alternatives such as FQPF19N20C, IRF200B211, RCX160N20, or STF19NF20.

Q: How does gate charge (Qg) affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values (23 nC for IRF200B211, 24 nC for STF19NF20) enable faster switching with reduced gate drive power consumption compared to higher values (66 nC for IRLI640GPBF). In high-frequency switching applications, lower gate charge substitutes improve efficiency and reduce thermal stress on gate drive circuitry.

Q: Can I substitute based on current rating alone?

A: No. Substitution requires matching or exceeding all critical parameters: Vdss, continuous drain current, gate threshold voltage, on-state resistance, and power dissipation. Additionally, package compatibility, operating temperature range, and product status must be verified. Matching current rating alone without considering gate drive requirements, thermal characteristics, and compliance status may result in circuit malfunction or reliability degradation.

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