IRLI630G N-Channel MOSFET 200V 6.2A TO-220-3 Equivalent & Substitute Parts

Part Overview

The IRLI630G is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage and 6.2A continuous drain current at 25°C. The device is packaged in a TO-220-3 through-hole configuration with an isolated tab and is rated for 35W maximum power dissipation. The IRLI630G is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs, repairs, and legacy system support.

Substiute Parts

IRLI630G
Vishay SiliconixIn Stock: 3829IRLI630G Datasheet
IRLI630G
Current Part
IRLI630GPBF
Vishay SiliconixIn Stock: 2160IRLI630GPBF Datasheet
IRLI630GPBF
Parametric Equivalent
RCX120N20
Rohm SemiconductorIn Stock: 777RCX120N20 Datasheet
RCX120N20
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 6.2 A (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 3.7A, 5V
Power Dissipation (Max) 35 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab

Substitute Part Grouping Explanation

Substitution of the IRLI630G is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 200V minimum
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 configuration

Secondary Compatibility Factors:

  • Continuous Drain Current (Id) at 25°C: Equal to or greater than 6.2A
  • On-State Resistance (Rds On): Equal to or lower than 400 mOhm at specified conditions
  • Power Dissipation: Equal to or greater than 35W
  • Operating Temperature Range: Minimum -55°C to 150°C

The IRLI630GPBF is a parametric equivalent manufactured by the same supplier (Vishay Siliconix) with identical electrical specifications and packaging. The primary distinction is product status (Active vs. Obsolete) and packaging format (Tube vs. standard).

The RCX120N20 manufactured by Rohm Semiconductor is a manufacturer-recommended substitute with enhanced electrical performance characteristics. While maintaining the 200V Vdss rating and through-hole TO-220 mounting, the RCX120N20 provides higher continuous drain current (12A vs. 6.2A) and improved on-state resistance (325 mOhm vs. 400 mOhm), making it suitable for applications requiring higher current capacity within the same voltage class.

Parameter Comparison

Parameter IRLI630G IRLI630GPBF RCX120N20
Manufacturer Vishay Siliconix Vishay Siliconix Rohm Semiconductor
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 6.2 A (Tc) 6.2 A (Tc) 12 A (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 3.7A, 5V 400 mOhm @ 3.7A, 5V 325 mOhm @ 6A, 10V
Power Dissipation (Max) 35 W (Tc) 35 W (Tc) 40 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ) -55 to 150 °C (TJ) 150 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRLI630GPBF Selection Criteria:

The IRLI630GPBF is the direct parametric equivalent of the IRLI630G and is the preferred substitute for applications requiring identical electrical performance and mechanical compatibility. This part maintains all electrical specifications including 200V Vdss, 6.2A continuous drain current, and 400 mOhm on-state resistance. The IRLI630GPBF holds Active product status, ensuring long-term availability and supply chain continuity. The part is ROHS3 compliant, meeting current environmental and regulatory requirements. Selection of IRLI630GPBF is appropriate for direct replacement in existing designs without circuit modification.

RCX120N20 Selection Criteria:

The RCX120N20 is suitable for applications where the original design specifications permit higher current capacity and improved thermal performance. This part provides 12A continuous drain current (double the IRLI630G rating) and lower on-state resistance (325 mOhm vs. 400 mOhm), resulting in reduced power dissipation and improved efficiency. The RCX120N20 is ROHS3 compliant and maintains Active product status. Selection of RCX120N20 is appropriate for new designs or redesigns where enhanced performance margins are beneficial. Circuit validation is required to confirm compatibility with gate drive voltage requirements, as the RCX120N20 specifies 10V drive voltage compared to the IRLI630G's 4V to 5V range.

Frequently Asked Questions (FAQ)

Q: Can the IRLI630GPBF be used as a direct replacement for the IRLI630G?

A: Yes. The IRLI630GPBF is a parametric equivalent with identical electrical specifications and packaging. Both parts are rated for 200V Vdss, 6.2A continuous drain current, and 400 mOhm on-state resistance. The primary differences are product status (Active vs. Obsolete) and packaging format (Tube vs. standard). No circuit modifications are required.

Q: What are the advantages of using the RCX120N20 over the IRLI630G?

A: The RCX120N20 provides higher continuous drain current (12A vs. 6.2A) and lower on-state resistance (325 mOhm vs. 400 mOhm). These characteristics result in reduced power dissipation and improved thermal performance. Both parts maintain the same 200V Vdss rating and through-hole TO-220 mounting. The RCX120N20 is suitable for applications requiring higher current capacity within the same voltage class.

Q: Are there any gate drive voltage differences between these parts?

A: Yes. The IRLI630G and IRLI630GPBF specify drive voltages of 4V to 5V for maximum on-state resistance specification. The RCX120N20 specifies a 10V drive voltage. Circuit gate drive capability must be evaluated to ensure compatibility with the RCX120N20 if substitution is considered.

Q: Are all three parts RoHS compliant?

A: The IRLI630G is RoHS non-compliant. Both the IRLI630GPBF and RCX120N20 are ROHS3 compliant, meeting current environmental and regulatory requirements. Selection of either substitute part satisfies RoHS compliance requirements for new production.

Q: What is the difference between the IRLI630G and IRLI630GPBF packaging?

A: The IRLI630G is supplied in standard packaging, while the IRLI630GPBF is supplied in Tube packaging. Both parts use the TO-220-3 Full Pack with isolated tab configuration. Tube packaging is standard for active production parts and does not affect electrical performance or mechanical compatibility.

Q: Can the RCX120N20 be used in legacy designs without modification?

A: The RCX120N20 maintains the same 200V Vdss rating and through-hole TO-220 mounting, providing mechanical compatibility. However, the higher gate charge (15 nC vs. 40 nC) and different gate threshold voltage (5.25V @ 1mA vs. 2V @ 250µA) require circuit validation. Gate drive circuitry must be confirmed to provide adequate 10V drive voltage. Thermal analysis should be performed to confirm that the improved performance characteristics do not introduce unintended circuit behavior changes.

Q: What is the operating temperature range for each part?

A: The IRLI630G and IRLI630GPBF both specify -55°C to 150°C junction temperature range. The RCX120N20 specifies a maximum junction temperature of 150°C. All three parts are suitable for industrial temperature range applications.

Q: Are these parts suitable for high-frequency switching applications?

A: Gate charge and input capacitance specifications determine switching performance. The IRLI630G and IRLI630GPBF specify 40 nC gate charge and 1100 pF input capacitance. The RCX120N20 specifies 15 nC gate charge and 740 pF input capacitance, indicating faster switching characteristics. Application-specific frequency requirements must be evaluated against these parameters.

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